Preparation of B-Si films by chemical vapor deposition

Abstract

B-Si films were prepared by chemical vapor deposition (CVD) using high-frequency induction heating. Mixed gases of silane and diborane were used as source materials. The deposits were prepared on a graphite substrates at the substrate temperature between 1188 and 1616 K under the total pressure in the CVD chamber of 2.7 kPa. The molar ratio of B/Si in the source gas was 6 to 60. At lower B/Si Ratio in the source gas, SiB/sub 4/ was formed. SiB/sub 6/ and SiB/sub n/ could be also formed at the higher ratios of B/Si. And, the deposit was dependent on the substrate temperature. The deposit with higher B concentration was obtained with increasing the substrate temperature. The electrical properties such as Seebeck coefficient and electrical conductivity of the films were measured.