2017 75th Annual Device Research Conference (DRC)最新文献_第9页

Defects in layered vapor-phase grown MOS2 层状气相生长MOS2中的缺陷

2017 75th Annual Device Research Conference (DRC) Pub Date : 2017-06-01 DOI: 10.1109/DRC.2017.7999486

M. Belete, S. Kataria, O. Engström, M. Lemme

引用次数: 2

Quantifying substrate removal induced electrothermal degradation in AlGaN/GaN HEMTs 定量底物去除诱导AlGaN/GaN hemt的电热降解

2017 75th Annual Device Research Conference (DRC) Pub Date : 2017-06-01 DOI: 10.1109/DRC.2017.7999411

M. Tadjer, P. Raad, T. Feygelson, A. Koehler, T. Anderson, L. Ruppalt, A. Nath, B. Pate, K. Hobart, F. Kub

引用次数: 3

Black phosphorus field-effect transistor with record drain current exceeding 1 A/mm 黑磷场效应晶体管，记录漏极电流超过1 A/mm

2017 75th Annual Device Research Conference (DRC) Pub Date : 2017-06-01 DOI: 10.1109/DRC.2017.7999395

M. Si, Lingming Yang, Yuchen Du, P. Ye

引用次数: 12

Dimensionality matters: Electronic transport in 2D layered materials 维度问题:二维层状材料中的电子输运

2017 75th Annual Device Research Conference (DRC) Pub Date : 2017-06-01 DOI: 10.1109/DRC.2017.7999390

J. Appenzeller

引用次数: 0

Realizing P-FETs and photodiodes on MoS2 through area-selective p-doping via vacancy engineering 利用空位工程在二硫化钼上通过区域选择性p掺杂实现p场效应管和光电二极管

2017 75th Annual Device Research Conference (DRC) Pub Date : 2017-06-01 DOI: 10.1109/DRC.2017.7999418

Shubhadeep Bhattacharjee, K. L. Ganapathi, N. Bhat

{"title":"Realizing P-FETs and photodiodes on MoS2 through area-selective p-doping via vacancy engineering","authors":"Shubhadeep Bhattacharjee, K. L. Ganapathi, N. Bhat","doi":"10.1109/DRC.2017.7999418","DOIUrl":"https://doi.org/10.1109/DRC.2017.7999418","url":null,"abstract":"Air-stable and area-selective doping strategies have eluded 2D materials and thus been a major bottleneck in realizing the plethora of semiconductor devices which require an built in electric field accessible from a p/n junction. Here, we demonstrate the possibility of p-doping through Vacancy Engineering, which unlike previous reports of molecular/substitutional doping is both area/dopant controllable and air-stable. Through Ar+ ions of appropriate energy and fluence bombarded on exfoliated MoS<inf>2</inf>, we demonstrate creation of sulfur vacancies that vary the S:Mo stoichiometry from 1.94 to 0.97 and hence controllably introduce p-type doping as verified using in-situ XPS and ex-situ Raman/PL measurements. FETs fabricated on Ar+ bombarded flakes show complete flip in polarity of carrier type from n-type to p-type when compared to Reference samples with the same metal contacts. Furthermore, selective Ar+ Bombardment only on contacts region shows effective hole injection with I<inf>on</inf>/I<inf>off</inf>>103. Finally p/n junctions with Ar+ bombardment performed on one half of the flake demonstrate high rectification ratio (>104), forward currents (∼0.6 mA/cm2) and excellent photoresponse (I<inf>light</inf>/I<inf>dark</inf> ∼103) and responsivity (100–400 μA/W).","PeriodicalId":248087,"journal":{"name":"2017 75th Annual Device Research Conference (DRC)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115330960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A random number generator based on insulator-to-metal electronic phase transitions 基于绝缘体-金属电子相变的随机数发生器

2017 75th Annual Device Research Conference (DRC) Pub Date : 2017-06-01 DOI: 10.1109/DRC.2017.7999423

M. Jerry, A. Parihar, A. Raychowdhury, S. Datta

引用次数: 10

Small-signal characteristics of graded AlGaN channel PolFETs 梯度AlGaN通道极化场效应管的小信号特性

2017 75th Annual Device Research Conference (DRC) Pub Date : 2017-06-01 DOI: 10.1109/DRC.2017.7999409

S. Bajaj, Zhichao Yang, F. Akyol, P. Park, Yuewei Zhang, S. H. Sohel, S. Krishnamoorthy, D. Meyer, S. Rajan

引用次数: 2

1 kV field plated in-situ oxide, GaN interlayer based vertical trench MOSFET (OG-FET) 1kv原位氧化场镀氮化镓层间基垂直沟槽MOSFET (OG-FET)

2017 75th Annual Device Research Conference (DRC) Pub Date : 2017-06-01 DOI: 10.1109/DRC.2017.7999410

C. Gupta, Anchal Agarwal, Silvia H. Chan, Onur S. Koksaldi, S. Keller, U. Mishra

引用次数: 9

Scaling is over — What now? 缩放结束了-现在怎么办?

2017 75th Annual Device Research Conference (DRC) Pub Date : 2017-06-01 DOI: 10.1109/DRC.2017.7999480

W. Haensch

{"title":"Scaling is over — What now?","authors":"W. Haensch","doi":"10.1109/DRC.2017.7999480","DOIUrl":"https://doi.org/10.1109/DRC.2017.7999480","url":null,"abstract":"Over the last half century, the device community was guided by two quintessential laws that set the roadmap for device work: (1) Moore's law that provided the commercial push to double device count in a cadence of approximately two years and (2) Dennard's scaling laws that provided the physics to do just that. These driving forces slowing down due to power constraints. In fact, the clock frequency did not change significantly since the 65nm node. However, the basic underlying van Neumann architecture, shown in Fig 1, that binds the compute unit with the memory has not changed since its conception in the late 1940s. It served well as general computing platform for the traditional workloads like transaction processing, data bases, etc. However as more and more data is collected and the desire to extract value from this data is growing, a class of workloads is emerging that is ill fitted to run on von Neumann machines. These so called cognitive workloads will handle massive amounts (10s of PB) of data compared to 100GB in traditional workloads. They do not require the same digital accuracy and are more noise tolerant. These relaxed requirements allow to create accelerator chips at improved compute efficiency compared to the general-purpose CPU [1], however within the context of the von Neumann architecture. Neuromorphic computing solutions will eliminate the von Neumann bottleneck by reducing data movement in the system.","PeriodicalId":248087,"journal":{"name":"2017 75th Annual Device Research Conference (DRC)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123268077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Graphene-based ion-sensitive field effect transistor 石墨烯基离子敏感场效应晶体管

2017 75th Annual Device Research Conference (DRC) Pub Date : 2017-06-01 DOI: 10.1109/DRC.2017.7999422

Hongmei Li, Md. Sayful Islam, G. Koley

引用次数: 2