Dimensionality matters: Electronic transport in 2D layered materials

J. Appenzeller
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Abstract

It seems to be unavoidable that the first question that anyone asks when a new material is introduced fo electronic device applications is: “What mobility does this material have?” In fact, this question can be rather misleading, like in the context of graphene, where the absence of a bandgap immediately prohibits its use for transistor applications despite its outstanding mobility values. In addition, quoting mobilities without specifying the actual body thickness of the material under investigation can also easily result in a misinterpretation. It has long been known for example that the mobility of silicon rapidly degrades once its thickness reaches about 10nm For sub-1nm body thicknesses any three-dimensional 3D crystal becomes simply non-conducting. With this in mind, recently reported transport data on two-dimensional (2D) semiconducting materials as transition meta dichalcogenides (TMDs) and black phosphorus (BP) with body thicknesses tbody in the nm-range become quit impressive, even if their mobilities cannot rival graphene.
维度问题:二维层状材料中的电子输运
当一种新材料被引入电子设备应用时,人们问的第一个问题似乎是不可避免的:“这种材料具有什么样的移动性?”事实上,这个问题可能会产生误导,就像石墨烯的情况一样,尽管石墨烯具有出色的迁移率价值,但由于没有带隙,它立即禁止了其在晶体管中的应用。此外,引用流动性而不指定所调查材料的实际体厚度也容易导致误解。例如,人们早就知道,一旦硅的厚度达到10nm左右,其迁移率就会迅速下降。对于低于1nm的体厚度,任何三维3D晶体都变成不导电的。考虑到这一点,最近报道的二维(2D)半导体材料的输运数据,如过渡元二硫族化合物(TMDs)和黑磷(BP),其体厚在纳米范围内,即使它们的移动性无法与石墨烯相比,也变得非常令人印象深刻。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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