2017 75th Annual Device Research Conference (DRC)最新文献_第3页

Temperature dependent characterization of Ga2O3 MOSFETs with Spin-on-Glass source/drain doping 玻璃自旋源/漏极掺杂下Ga2O3 mosfet的温度依赖性表征

2017 75th Annual Device Research Conference (DRC) Pub Date : 2017-06-25 DOI: 10.1109/DRC.2017.7999401

Ke Zeng, U. Singisetti

{"title":"Temperature dependent characterization of Ga2O3 MOSFETs with Spin-on-Glass source/drain doping","authors":"Ke Zeng, U. Singisetti","doi":"10.1109/DRC.2017.7999401","DOIUrl":"https://doi.org/10.1109/DRC.2017.7999401","url":null,"abstract":"β-Gallium oxide (Ga2O3) is an increasingly attractive choice for next generation power electronics applications due to its large bandgap, good mobility giving rise to a high Baliga's figure of merit (BFoM), mature bulk and thin film growth technologies with excellent doping control over several orders [1-3]. Moreover, recent experimental MOSFETs have shown large breakdown voltages (750 V), large on current densities (0.6 A/mm), enhancement mode operation, and record high breakdown field strengths (3.8 MV/cm); all of which show the potential of the technology for high efficiency power devices. Source/drain (S/D) contact and access resistance need to be reduced in power devices to decrease the conduction losses. Si ion-implantation was used previously to reduce the source resistance. Alternatively, we have proposed a novel, simple and effective Sn-doped Spin-on-Glass (SOG) doping to achieve a high doping density at the surface, thus reducing the specific contact resistivity (ρc) [4]. A ρc of 2.1±1.4 × 10−5 Ω·cm2 was obtained for 20 nm ultra-shallow junctions which is comparable to ion-implanted S/D junctions. Large drain current density (40 mA/mm) was measured in MOSFETs with SOG S/D doping. Here, we report the temperature dependent characteristics of Ga2O3 MOSFETs with spin-on-glass S/D doping.","PeriodicalId":248087,"journal":{"name":"2017 75th Annual Device Research Conference (DRC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116485563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Gate-recessed, laterally-scaled β-Ga2O3 MOSFETs with high-voltage enhancement-mode operation 具有高电压增强模式工作的栅极凹槽，横向缩放β-Ga2O3 mosfet

2017 75th Annual Device Research Conference (DRC) Pub Date : 2017-06-25 DOI: 10.1109/DRC.2017.7999398

K. Chabak, A. Green, N. Moser, S. Tetlak, J. McCandless, K. Leedy, R. Fitch, A. Crespo, G. Jessen

引用次数: 20

Toward realization of Ga2O3 for power electronics applications 实现Ga2O3在电力电子领域的应用

2017 75th Annual Device Research Conference (DRC) Pub Date : 2017-06-25 DOI: 10.1109/DRC.2017.7999397

G. Jessen, K. Chabak, A. Green, J. McCandless, S. Tetlak, K. Leedy, R. Fitch, S. Mou, E. Heller, S. Badescu, A. Crespo, N. Moser

{"title":"Toward realization of Ga2O3 for power electronics applications","authors":"G. Jessen, K. Chabak, A. Green, J. McCandless, S. Tetlak, K. Leedy, R. Fitch, S. Mou, E. Heller, S. Badescu, A. Crespo, N. Moser","doi":"10.1109/DRC.2017.7999397","DOIUrl":"https://doi.org/10.1109/DRC.2017.7999397","url":null,"abstract":"As a transparent conducting oxide with a large bandgap of ∼4.9 eV and associated large estimated critical electric field (Ec) strength of 8 MV/cm, β-Ga2O3 (BGO) has been touted for its tremendous potential as a power switch. Power switch metrics such as Baliga's figure of merit (BFOM) estimating dc conduction losses and Huang's material figure of merit (HMFOM) incorporating dynamic switching losses are functions of EC3 and EC respectively [1, 2]. BFOM for BGO is expected to exceed that of GaN by 400% and HMFOM for BGO is expected to be comparable to GaN. It can also be shown that for a given power loss during switching, the switch frequency (f) varies as EC2 suggesting the potential of BGO power conversion in the GHz regime [1, 2]. The manufacturability and cost value proposition of BGO based on large area native substrate availability as shown by Huang's chip area manufacturing FOM (HCAFOM) indicate a disruptive cost advantage over GaN (330%). Additionally, the Johnson figure of merit (JFOM) representing the power-frequency product for RF amplification for BGO is similar to that of GaN indicating potential for integration of power conversion and RF applications in the same platform. Finally, Huang's high temperature figure of merit (HTFOM) shows that BGO has the lowest metric for all semiconductors compared here due to low thermal conductivity and high field strength. However, all wide bandgap power semiconductors, including diamond, face significant thermal engineering challenges relative to Si because of the inherent high energy densities of materials with large Ec values. A summary of unipolar FET figure-of-merit comparisons for power semiconductors is shown in Table 1.","PeriodicalId":248087,"journal":{"name":"2017 75th Annual Device Research Conference (DRC)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114624211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 12

Piezoelectric thin films on polyimide substrates for flexible piezoelectric devices 柔性压电器件用聚酰亚胺基板压电薄膜

2017 75th Annual Device Research Conference (DRC) Pub Date : 2017-06-25 DOI: 10.1109/DRC.2017.7999459

Tianning Liu, M. Wallace, S. Trolier-McKinstry, T. Jackson

引用次数: 1

Effective n-type doping of monolayer MoS2 by AlOx AlOx有效掺杂单层MoS2的n型

2017 75th Annual Device Research Conference (DRC) Pub Date : 2017-06-25 DOI: 10.1109/DRC.2017.7999392

C. McClellan, E. Yalon, K. Smithe, S. Suryavanshi, E. Pop

引用次数: 39

Molecular doping of transition metal dichalcogenides using metal phythalocyanines 用金属酞菁掺杂过渡金属二硫族化合物

2017 75th Annual Device Research Conference (DRC) Pub Date : 2017-06-25 DOI: 10.1109/DRC.2017.7999455

S. Zhang, Christopher J. Benjamin, Zhihong Chen

引用次数: 1

Demonstration of Ga2O3 trench MOS-type Schottky barrier diodes Ga2O3沟槽mos型肖特基势垒二极管的演示

2017 75th Annual Device Research Conference (DRC) Pub Date : 2017-06-25 DOI: 10.1109/DRC.2017.7999399

K. Sasaki, D. Wakimoto, Q. Thieu, Y. Koishikawa, A. Kuramata, M. Higashiwaki, S. Yamakoshi

引用次数: 4

Nano-indented Ge surfaces by metal-assisted chemical etching (MacEtch) and its application for optoelectronic devices 金属辅助化学蚀刻(MacEtch)纳米压痕锗表面及其在光电器件中的应用

2017 75th Annual Device Research Conference (DRC) Pub Date : 2017-06-25 DOI: 10.1109/DRC.2017.7999453

Munho Kim, Soongyu Yi, J. Kim, Shih-Chia Liu, Weidong Zhou, Zongfu Yu, Xiuling Li

引用次数: 2

High-frequency ZnO schottky diodes for non-contact inductive power transfer in large-area electronics 用于大面积电子器件非接触感应功率传输的高频ZnO肖特基二极管

2017 75th Annual Device Research Conference (DRC) Pub Date : 2017-06-01 DOI: 10.1109/DRC.2017.7999462

L. E. Aygun, S. Wagner, N. Verma, J. Sturm

引用次数: 0

Wide-bandgap Gallium Nitride p-channel MISFETs with enhanced performance at high temperature 具有增强高温性能的宽禁带氮化镓p沟道misfet

2017 75th Annual Device Research Conference (DRC) Pub Date : 2017-06-01 DOI: 10.1109/DRC.2017.7999466

K. Nomoto, S. Bader, Kevin Lee, S. Bharadwaj, Zongyang Hu, H. Xing, D. Jena

引用次数: 3