Molecular doping of transition metal dichalcogenides using metal phythalocyanines

S. Zhang, Christopher J. Benjamin, Zhihong Chen
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引用次数: 1

Abstract

Control of carrier type and density through doping of semiconducting transition metal dichalcogenides (TMDs) is critical for their applications in electronic and optoelectronic devices. In this work, we explore a group of phythalocyannie (Pc) molecules that can chelate with various metal elements from the periodic table, providing a wide range of doping levels. Unlike other substitutional doping distorting TMD lattices, these Pc molecules dope the TMD channels through surface charge transfer [1]. By using metal substituents with different work functions, such as Pt, Cu, Fe, and Na in phythalocyannies, we are able to tune the doping level and polarity of TMD devices. We achieved the highest doping levels for phsioabsorbed species up to date. Unlike other dopants exhibiting unstable doping effects [2], these Pc compounds offering high doping levels remain almost unchanged even weeks after initial doping. These Pc molecules can chelate up to 70 different elements from the periodic table [3] and potentially providing vastly different properties to TMD devices.
用金属酞菁掺杂过渡金属二硫族化合物
通过掺杂半导体过渡金属二硫族化合物(TMDs)来控制载流子类型和密度对于其在电子和光电子器件中的应用至关重要。在这项工作中,我们探索了一组phythalocyannie (Pc)分子,它们可以与元素周期表中的各种金属元素螯合,提供广泛的掺杂水平。与其他替代掺杂扭曲TMD晶格不同,这些Pc分子通过表面电荷转移来掺杂TMD通道[1]。通过在酞菁中加入Pt、Cu、Fe和Na等具有不同功函数的金属取代基,我们可以调整TMD器件的掺杂水平和极性。我们达到了迄今为止物理吸收物种的最高兴奋剂水平。与其他表现出不稳定掺杂效应的掺杂剂[2]不同,这些具有高掺杂水平的Pc化合物在初始掺杂数周后几乎保持不变。这些Pc分子可以螯合元素周期表[3]中多达70种不同的元素,并可能为TMD设备提供截然不同的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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