IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.最新文献_第2页

Planar Fully Ion-Implanted High Power InP MISFETs 平面全离子注入高功率InP misfet

IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings. Pub Date : 1987-08-10 DOI: 10.1109/CORNEL.1987.721226

L. Messick, R. Nguyen, D. Collins

引用次数: 4

Enhance / Deplete GaAs SISFETs 增强/耗尽GaAs sisfet

IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings. Pub Date : 1987-08-10 DOI: 10.1109/CORNEL.1987.721221

H. Baratte, D. La Tulipe, D. Frank, P. Solomon, T. Jackson, S. Wright

引用次数: 1

Current Directions In Resonant Tunneling Research 共振隧道研究的当前方向

IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings. Pub Date : 1987-08-10 DOI: 10.1109/CORNEL.1987.721244

T. Sollner

{"title":"Current Directions In Resonant Tunneling Research","authors":"T. Sollner","doi":"10.1109/CORNEL.1987.721244","DOIUrl":"https://doi.org/10.1109/CORNEL.1987.721244","url":null,"abstract":"Resonant tunneling through double-barrier heterostructures has attracted increasing interest recently, largely because of the fast charge transport1 it provides. In addition, the negative differential resistance regions that exist in the current-voltage (I-V) curve (peak-to-valley ratios of 3.5:l at room tem~erature~-~ and nearly 1O:l at 77 K have been measured) suggest that high-speed devices based on the unique character of the I-V curve should be possible. For example, the negative differential resistance region is capable of providing the gain necessary for high-frequency o~cillations.~ In our laboratory we have been attempting to increase the frequency and power of these oscillators,6 and to demonstrate several different highfrequency devices. Others have worked toward a better understanding of the equivalent circuit of the device7 and the underlying processes responsible for the frequency Many three-terminal devices using resonant tunneling in various ways have also been proposed and fabricated.11-20 In this paper we will summarize the work at Lincoln Laboratory on microwave and millimeter-wave devices, discuss the possibility of applications of resonant tunneling to digital logic, and then review some three-terminal devices that have been proposed, and in some cases tested.","PeriodicalId":247498,"journal":{"name":"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129588086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

High Frequency Properties Of InA1As/InGaAs High Electron Mobility Transistors At 77 K 77 K时InA1As/InGaAs高电子迁移率晶体管的高频特性

IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings. Pub Date : 1987-08-10 DOI: 10.1109/CORNEL.1987.721213

J. Kolodzey, S. Boor, P. Saunier, J. Lee, H. Tserng

引用次数: 2

Equivalent Circuits For High Frequency Transistors 高频晶体管等效电路

IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings. Pub Date : 1987-08-10 DOI: 10.1109/CORNEL.1987.721229

R. Trew

{"title":"Equivalent Circuits For High Frequency Transistors","authors":"R. Trew","doi":"10.1109/CORNEL.1987.721229","DOIUrl":"https://doi.org/10.1109/CORNEL.1987.721229","url":null,"abstract":"topology is determined by physical arguments and two-port characterization techniques. Mathematical functions are determined by physical device modeling or curve fitting to experimental data. The functions can then be analyzed to define a topology. In this manner, for example, it can be shown that the input circuit of an FET can be represented as a series RC circuit and the output network can be represented as a parallel RC circuit. The element values and their relationship to device parameters can be determined by analytic device modeling of the physical structure and the mechanisms responsible for device operation. Once the circuit topology is known the element values can also be extracted from experimental data taken from actual devices over a specified frequency band. The equivalent circuit is generally valid only over the frequency band for which the circuit has been determined. Attempts to extrapolate the response of the circuit beyond the characterized frequency band can produce misleading results, especially for circuits that have been simplified for convenience by removing certain elements. If an equivalent circuit is to be used to predict the upper frequency potential of devices (e.g., to determine ft or fmax) the equivalent circuit must be topologically accurate and based upon device physics. Elements representing the physical processes responsible for device operation must be present. The high frequency operation of four candidate transistors for mm-wave applications is compared in this paper. Physically based equivalent circuits are determined and used to predict high frequency potential. The element values are determined by extraction from measured dc and s-parameter data. The circuits are analyzed to determine the elements that limit high frequency operation. The four transistors investigated are listed in Table I and consist of a Hughes GaAs MESFET, the MIT Lincoln Labs PBT, a TRW AlGaAs/GaAs HEMT, and an Alpha AlGaAs/InGaAs/GaAs pseudomorphic HEMT.","PeriodicalId":247498,"journal":{"name":"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116118650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 10

Ion-Implanted Self-Aligned-Gate Quantum-well Heterostructure FETs 离子注入自对准门量子阱异质结构场效应晶体管

IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings. Pub Date : 1987-08-10 DOI: 10.1109/CORNEL.1987.721223

R. Kiehl, S. Wright, J. Magerlein, D. Frank

引用次数: 3

Quantum Transport Simulation Of A Resonant-Tunneling Diode 共振隧穿二极管的量子输运模拟

IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings. Pub Date : 1987-08-10 DOI: 10.1109/CORNEL.1987.721245

W. Frensley

引用次数: 0

A Self-Aligned AlGaAs/GaAs Heterostructure Bipolar Transistor With Non Alloyed Graded-Gap Ohmic Contacts To The Base And Emitter 自对准AlGaAs/GaAs异质结构双极晶体管与基极和发射极非合金化梯度间隙欧姆接触

IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings. Pub Date : 1987-08-10 DOI: 10.1109/CORNEL.1987.721237

M. Rao, S. Long, H. Kroemer

引用次数: 0

Temperature Effects On AlGaAs/GaAs Double Barrier Diodes With High Peak-to-Valley Current Ratios 温度对高峰谷电流比AlGaAs/GaAs双势垒二极管的影响

IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings. Pub Date : 1987-08-10 DOI: 10.1109/CORNEL.1987.721246

C. Huang, K. lkossi-Anastasiou, M. Paulus, C. Bozada, C. E. Stutz, R.L. Jones, K. Evans

引用次数: 0

Monolithic Millimeter Wave Impatt Transmitter 单片毫米波发射器

IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings. Pub Date : 1987-08-10 DOI: 10.1109/CORNEL.1987.721249

B. Bayraktaroglu, N. Camilleri, S. A. Lambert

引用次数: 2