Planar Fully Ion-Implanted High Power InP MISFETs

Abstract

Planar fully ion-implanted InP power MISFETS using SiO/sub 2/ as the gate insulator have been fabricated. At 9.7 GHz CW with 3.7 dB ain 800/spl mu/m gate width devices exhibited power per unit gate width as high as 2.9 W/mm, more than twice the highest value ever reported for GaAs FETs. For comparison at the same CW frequency and 4 dB gain our I mm gate width mesa-type epitaxial InP power MISFETs have demonstrated power per unit gate width as high as 4.5 W/mm, more than three times the highest GaAs value.