Quantum Transport Simulation Of A Resonant-Tunneling Diode

Abstract

The quantum-well resonant-tunneling diode (RTD) [ 1,2] is the simplest semiconductor heterostructure that displays interesting device properties due to quantum coherence effects. It is thus an ideal prototype system for which to develop techniques for the analysis of quantum devices. A form of quantum transport theory has been developed that is adapted to the study of quantum devices because i t provides a means of treating the electrical contacts to the device [3,41. Recent interest in the RTD can be attributed to the work of Sollner et al. [2], who demonstrated nonlinear electrical response in these devices at frequencies up to 2.5 THz. The existence of these results provides a motivation for the development of theoretical techniques to evaluate the small-signal ac response of a tunneling device. The present work demonstrates that such calculations may be readily performed by applying the techniques developed in [31 and [41.