温度对高峰谷电流比AlGaAs/GaAs双势垒二极管的影响

IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings. Pub Date : 1987-08-10 DOI:10.1109/CORNEL.1987.721246

C. Huang, K. lkossi-Anastasiou, M. Paulus, C. Bozada, C. E. Stutz, R.L. Jones, K. Evans

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引用次数: 0

摘要

分子束外延(MBE)技术的最新进展使得制造具有高峰谷电流(PVC)比的异质结双势垒二极管(dbd)成为可能。Goodhue et a/[l]报道了在300K (77K)下，在AIAs/GaAs体系中PVC比为3.5(10.0)。最近，我们[2]报道了300K (77K)下AIGaAdGaAs (x-0.42)体系的PVC比率为3.9 (14.3)，300K (77K)下DBD的PVC比率为3.6(21.7)，其中屏障被短周期AIAdGaAs超晶格取代。这些结果以及隧道装置的高速特性表明，DBD可能很快就会得到实际应用。还需要进一步的研究来表征DBD传导机制并优化器件设计。

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Temperature Effects On AlGaAs/GaAs Double Barrier Diodes With High Peak-to-Valley Current Ratios

Recent advances in Molecular Beam Epitaxy (MBE) technology have made possible the fabrication of heterojunction double barrier diodes (DBDs) with high peak to valley current (PVC) ratios. Goodhue et a/[ l ] repotted PVC ratios of 3.5 (10.0) at 300K (77K) in an AIAs/GaAs system. More recently, we [2] have reported PVC ratios of 3.9 (14.3) at 300K (77K) in an AIGaAdGaAs (x-0.42) system and of 3.6 (21.7) at 300K (77K) in a DBD in which the barriers were replaced with short period AIAdGaAs superlattices. These results, along with the high speed characteristics of tunneling devices, indicate the DBD may soon find practical application. Additional studies are still needed to characterize the DBD conduction mechanisms and to optimize device design.

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IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.

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