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2018 International Semiconductor Conference (CAS)最新文献

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TiO2 - Graphene Oxide Thin Films Obtained by Spray Pyrolysis Deposition 喷雾热解沉积法制备TiO2 -氧化石墨烯薄膜
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/SMICND.2018.8539831
I. Tismanar, L. Isac, A. Duţă, A. Obreja, O. Buiu
{"title":"TiO2 - Graphene Oxide Thin Films Obtained by Spray Pyrolysis Deposition","authors":"I. Tismanar, L. Isac, A. Duţă, A. Obreja, O. Buiu","doi":"10.1109/SMICND.2018.8539831","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539831","url":null,"abstract":"Graphene and graphene derivatives have a set of remarkable properties due to their 2D structure; to use these properties in various applications asks for increasing the thermal stability of the carbon-based components and this is why various composites are reported. The development of composites with metal oxide matrix and performant interfaces asks for using polar graphene derivatives as fillers, e,g, graphene oxide (GO). The development of thin multilayered composite films of TiO2 - GO - TiO2 using Spray Pyrolysis Deposition is discussed and the structural and surface properties are reported, considering further potential application of these composite layers as photocatalysts in advanced wastewater treatment or in self-cleaning surfaces.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114954728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Graphene and TiO2- PVDF Nanocomposites for Potential Applications in Triboelectronics 石墨烯和TiO2- PVDF纳米复合材料在摩擦电子学中的潜在应用
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/SMICND.2018.8539781
P. Pascariu, I. V. Tudose, C. Pachiu, M. Danila, O. Ioncscu, M. Popescu, E. Koudoumas, Mirela Petruta Suchea
{"title":"Graphene and TiO2- PVDF Nanocomposites for Potential Applications in Triboelectronics","authors":"P. Pascariu, I. V. Tudose, C. Pachiu, M. Danila, O. Ioncscu, M. Popescu, E. Koudoumas, Mirela Petruta Suchea","doi":"10.1109/SMICND.2018.8539781","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539781","url":null,"abstract":"Novel graphene and titanium dioxide-polyvinylidene fluoride (PVDF) based nanocomposite materials (G-TiO2-PVDF) fabricated by electrospinning technique and their properties will be presented. The new composite materials show enhanced properties that make them candidates for large range of applications including triboelectronics.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"37 11","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131496130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Nanoscience and Nanoengineering 1 纳米科学与纳米工程
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/smicnd.2018.8539823
{"title":"Nanoscience and Nanoengineering 1","authors":"","doi":"10.1109/smicnd.2018.8539823","DOIUrl":"https://doi.org/10.1109/smicnd.2018.8539823","url":null,"abstract":"Nanoscience and Nanoengineering 1","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130184795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Workshop ”Microsystems for Energy Harvesting and Environment Monitoring” “能源收集与环境监测的微系统”工作坊
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/smicnd.2018.8539844
{"title":"Workshop ”Microsystems for Energy Harvesting and Environment Monitoring”","authors":"","doi":"10.1109/smicnd.2018.8539844","DOIUrl":"https://doi.org/10.1109/smicnd.2018.8539844","url":null,"abstract":"Workshop ”Microsystems for Energy Harvesting and Environment Monitoring”","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128939844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Raman Investigation of Critical Steps in Monolayer Graphene Transfer Form Copper Substrate to Oxidized Silicon by Means of Electrochemical Delamination 利用电化学分层技术对单层石墨烯从铜衬底向氧化硅转移关键步骤的拉曼研究
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/SMICND.2018.8539747
F. Comanescu, A. Istrate, M. Purica
{"title":"Raman Investigation of Critical Steps in Monolayer Graphene Transfer Form Copper Substrate to Oxidized Silicon by Means of Electrochemical Delamination","authors":"F. Comanescu, A. Istrate, M. Purica","doi":"10.1109/SMICND.2018.8539747","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539747","url":null,"abstract":"In this paper we present the results of the investigation by Raman spectroscopy of the monolayer graphene transfer on oxidized silicon substrates by highlighting the critical steps of the transfer using electrochemical delamination method. Characteristic Raman bands of graphene (D, G and 2D) are certifying if a transfer step has been performed successfully. The final step of Polymethyl methacrylate (PMMA) removal is the most critical one due to the partially folding of graphene. After transfer defects are induced in graphene which is confirmed by the increase of the ratio of the intensity of the D band to the G (ID/IG).","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121226863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Permittivity Characterization Using a Double-Sided Parallel-Strip Line Resonator 用双面平行带线谐振器表征介电常数
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/SMICND.2018.8539801
D. Nešić, I. Radnović
{"title":"Permittivity Characterization Using a Double-Sided Parallel-Strip Line Resonator","authors":"D. Nešić, I. Radnović","doi":"10.1109/SMICND.2018.8539801","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539801","url":null,"abstract":"The paper introduces the new type of a microwave permittivity sensor with an open stub realized as a double-sided parallel-strip line without substrate. It can be totally immersed into the measured material and obtains high sensitivity of the resonant frequency nearly proportional to ratio of square roots of the dielectric constants of the measured materials.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127378117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Efficiency and Total Harmonic Distorsion in Composite Right-/Left-Handed Distributed Oscillators 复合右/左分布振子的效率和总谐波畸变
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/SMICND.2018.8539754
G. Bartolucci, L. Scucchia, S. Simion
{"title":"Efficiency and Total Harmonic Distorsion in Composite Right-/Left-Handed Distributed Oscillators","authors":"G. Bartolucci, L. Scucchia, S. Simion","doi":"10.1109/SMICND.2018.8539754","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539754","url":null,"abstract":"In this paper the performance of two configurations of Composite Right-/Left-Handed (CRLH) distributed oscillators is investigated. The analysis of both circuits is carried out by means of a numerical simulator. A comparison between the two oscillators is presented in terms of output power, efficiency, and total harmonic distortion.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125986311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microwave and Millimeter Wave Circuits and Systems 微波和毫米波电路和系统
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/smicnd.2018.8539794
{"title":"Microwave and Millimeter Wave Circuits and Systems","authors":"","doi":"10.1109/smicnd.2018.8539794","DOIUrl":"https://doi.org/10.1109/smicnd.2018.8539794","url":null,"abstract":"Microwave and Millimeter Wave Circuits and Systems","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126679731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrochemical Sensors for Detection of Different Ionic Species (Nitrites/Nitrates and Heavy Metals) in Natural Water Sources 天然水源中不同离子(亚硝酸盐/硝酸盐和重金属)的电化学传感器检测
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/SMICND.2018.8539739
M. Gartner, C. Lete, M. Chelu, H. Stroescu, M. Zaharescu, C. Moldovan, C. Brasoveanu, M. Gheorghe, S. Gheorghe, A. Duţă, Z. Lábadi, B. Kalas, A. Saftics, M. Fried, P. Petrik, É. Tóth, H. Jankovics, F. Vonderviszt
{"title":"Electrochemical Sensors for Detection of Different Ionic Species (Nitrites/Nitrates and Heavy Metals) in Natural Water Sources","authors":"M. Gartner, C. Lete, M. Chelu, H. Stroescu, M. Zaharescu, C. Moldovan, C. Brasoveanu, M. Gheorghe, S. Gheorghe, A. Duţă, Z. Lábadi, B. Kalas, A. Saftics, M. Fried, P. Petrik, É. Tóth, H. Jankovics, F. Vonderviszt","doi":"10.1109/SMICND.2018.8539739","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539739","url":null,"abstract":"Thin films prepared by different technologies (electrodeposition, screen printing) were electrochemically investigated as sensitive layers for nitrates/nitrites. Bacterial flagellar filaments (special protein molecules) were engineered as sensitive biolayers for heavy metal detection.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123639966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Direct Writing Patterns for Gold Thin Film with DPN Technique 用DPN技术直接书写金薄膜图案
2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI: 10.1109/SMICND.2018.8539804
C. Mihaela, Pachiu Cristina, Dediu Violeta
{"title":"Direct Writing Patterns for Gold Thin Film with DPN Technique","authors":"C. Mihaela, Pachiu Cristina, Dediu Violeta","doi":"10.1109/SMICND.2018.8539804","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539804","url":null,"abstract":"Dip-pen nanolithography combined with wet-chemical etching has been used to generate gold nanostructures with desired shapes and sizes. Self-assembled monolayers of 16-mercaptohexadecanoic acid have been patterned by DPN in different shapes: dots, lines and complex shapes, interdigits electrodes. AFM and LFM were used to measure the roughness of gold surface and to examine the thiol deposition and binding quality. These results show that DPN can be used as alternative method to generate different patterns used for complex devices, biosensor, and optoelectronic devices.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130814227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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