A. de Groote, P. Cardile, A. Subramanian, M. Tassaert, D. Delbeke, R. Baets, G. Roelkens
{"title":"A waveguide coupled LED on SOI by heterogeneous integration of InP-based membranes","authors":"A. de Groote, P. Cardile, A. Subramanian, M. Tassaert, D. Delbeke, R. Baets, G. Roelkens","doi":"10.1109/GROUP4.2015.7305939","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305939","url":null,"abstract":"A novel design geometry for an optically pumped LED by integrating thin III-V membranes on SOI is proposed. Simulation results predict power efficiency and fabrication tolerance. We present a first proof-of-concept demonstration of the LED.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"176 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121265776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Escalante, A. Gassenq, S. Tardif, K. Guiloy, N. Pauc, F. Rieutord, V. Calvo, G. O. Dias, D. Rouchon, J. Widiez, J. Hartmann, D. Fowler, A. Chelnokov, V. Reboud, I. Duchemin, Y. Niquet
{"title":"Non-linear model of electronic band structure to highly tensile-strained Germanium","authors":"J. Escalante, A. Gassenq, S. Tardif, K. Guiloy, N. Pauc, F. Rieutord, V. Calvo, G. O. Dias, D. Rouchon, J. Widiez, J. Hartmann, D. Fowler, A. Chelnokov, V. Reboud, I. Duchemin, Y. Niquet","doi":"10.1109/GROUP4.2015.7305955","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305955","url":null,"abstract":"We propose a non-linear model based on tight-binding method to obtain, as a function of deformation, the evolution of conduction and valence band around Γ-bandgap of germanium.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129675035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Pinguet, G. Armijo, J. Balardeta, S. Barabas, B. Chase, Y. Chi, A. Dahl, P. D. De Dobbelaere, Y. de Koninck, S. Denton, M. Eker, S. Fathpour, D. Foltz, F. Gholami, S. Gloeckner, K. Hon, S. Hovey, S. Jackson, W. Li, Y. Liang, M. Mack, G. Masini, G. McGee, A. Mekis, S. Pang, M. Peterson, L. Planchon, K. Roberson, S. Sahni, J. Schramm, M. Sharp, C. Sohn, K. Stechschulte, P. Sun, G. Vastola, S. Wang, G. Wong, K. Xu, K. Yokoyama, S. Yu, R. Zhou
{"title":"Advanced silicon photonic transceivers","authors":"T. Pinguet, G. Armijo, J. Balardeta, S. Barabas, B. Chase, Y. Chi, A. Dahl, P. D. De Dobbelaere, Y. de Koninck, S. Denton, M. Eker, S. Fathpour, D. Foltz, F. Gholami, S. Gloeckner, K. Hon, S. Hovey, S. Jackson, W. Li, Y. Liang, M. Mack, G. Masini, G. McGee, A. Mekis, S. Pang, M. Peterson, L. Planchon, K. Roberson, S. Sahni, J. Schramm, M. Sharp, C. Sohn, K. Stechschulte, P. Sun, G. Vastola, S. Wang, G. Wong, K. Xu, K. Yokoyama, S. Yu, R. Zhou","doi":"10.1007/978-3-642-10503-6_12","DOIUrl":"https://doi.org/10.1007/978-3-642-10503-6_12","url":null,"abstract":"","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134121761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pierre Barriiauli, M. Brun, P. Labeye, J. Hartmann, P. Brianceau, F. Boulila, M. Carras, Sergio Nicolelti
{"title":"Design, process and characterization of an arrayed waveguide grating in the 2180–2280cm−1 range","authors":"Pierre Barriiauli, M. Brun, P. Labeye, J. Hartmann, P. Brianceau, F. Boulila, M. Carras, Sergio Nicolelti","doi":"10.1109/GROUP4.2015.7305904","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305904","url":null,"abstract":"In this paper, we present the design, process and characterization of an AWC bused on a SiGe graded index waveguide plateform, operating at 4.5μm (2180-2280cm-1). A transmission of -5dB and a crosstalk below -20dB arc demonstrated.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133289624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Knoll, S. Lischke, L. Zimmermann, A. Awny, M. Kroh, A. Peczek, K. Voigt, K. Petermann
{"title":"Fabrication of high bit rate, monolith ically integrated receivers in photonic BiCMOS technology","authors":"D. Knoll, S. Lischke, L. Zimmermann, A. Awny, M. Kroh, A. Peczek, K. Voigt, K. Petermann","doi":"10.1109/GROUP4.2015.7305923","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305923","url":null,"abstract":"We present results of photonic BiCMOS process development enabling the fabrication of monolithically integrated receivers for 40Gbps and beyond. Focus is on the challenge to fabricate simultaneously 200GHz SiGe HBTs and Ge photodiodes with enough bandwidth.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133845774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Takabayashi, A. Uetake, Tokuharu Kimura, Tsuyoshi Yamamoto, M. Yamaguchi, K. Takada, K. Takemasa, M. Sugawara, Y. Arakawa
{"title":"1.3-μm Quantum-dot lasers integrated with spot-size converter for improved coupling efficiency to waveguide","authors":"K. Takabayashi, A. Uetake, Tokuharu Kimura, Tsuyoshi Yamamoto, M. Yamaguchi, K. Takada, K. Takemasa, M. Sugawara, Y. Arakawa","doi":"10.1109/GROUP4.2015.7305938","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305938","url":null,"abstract":"1.3-μm quantum-dot lasers integrated with a thickness tapered waveguide as a spot-size converter have been developed to improve coupling efficiency to silicon photonics devices. Improvements of far-field patterns and coupling efficiency were experimentally demonstrated.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125820339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Hassan, C. Sciancalepore, J. Harduin, T. Ferrotti, S. Pauliac, C. Kopp, S. Menezo, B. Ben Bakir, R. Lycett, D. Gallagher, Jacques-Alexandre Dallery, U. Weidenmueller
{"title":"Advances toward temperature-independent and fabrication-insensitive (de)multiplexer in the O-band","authors":"K. Hassan, C. Sciancalepore, J. Harduin, T. Ferrotti, S. Pauliac, C. Kopp, S. Menezo, B. Ben Bakir, R. Lycett, D. Gallagher, Jacques-Alexandre Dallery, U. Weidenmueller","doi":"10.1109/GROUP4.2015.7305965","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305965","url":null,"abstract":"We describe the simulation, fabrication, and characterization of fabrication-insensitive multiplexers (MUX) based on echelle grating and temperature-independent cascaded Mach-Zehnder MUXs. The results show a clear improvement for both robustness axes.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"361 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125652253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Tseng, Jia-Jiun Gao, Li-Chuan Weng, N. Na, E. Chen, Ming-Chang M. Lee
{"title":"Graded Ge1−xSnx photodetectors fabricated on Si substrates by rapid melt growth method","authors":"C. Tseng, Jia-Jiun Gao, Li-Chuan Weng, N. Na, E. Chen, Ming-Chang M. Lee","doi":"10.1109/GROUP4.2015.7305982","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305982","url":null,"abstract":"Near-infrared absorption at 2000-nm wavelength is observed in a Ge1-xSnx metal-semiconductor-metal (MSM) photodetector on a Si substrate. The device is fabricated by rapid melt growth method with graded Sn concentration up to 5-10%.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"178 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124434587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Uvin, S. Keyvaninia, M. Tassaert, Z. Wang, X. Fu, S. Latkowski, J. Marien, L. Thomassen, F. Lelarge, G. Duan, G. Lepage, P. Verheyen, J. Van Campenhout, E. Bente, G. Roelkens
{"title":"1.7 kHz RF linewidth III-V-on-silicon mode-locked laser","authors":"S. Uvin, S. Keyvaninia, M. Tassaert, Z. Wang, X. Fu, S. Latkowski, J. Marien, L. Thomassen, F. Lelarge, G. Duan, G. Lepage, P. Verheyen, J. Van Campenhout, E. Bente, G. Roelkens","doi":"10.1109/GROUP4.2015.7305936","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305936","url":null,"abstract":"For the first time we demonstrate an anti-colliding mode-locked laser implemented on a III-V-on-silicon platform. In passive mode-locked operation a 1.7kHz 3dB linewidth of the fundamental RF tone at 4.83GHz is obtained.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122592174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Excess carrier lifetime in epitaxially grown layers of germanium on silicon","authors":"S. Kako, K. Oda, Tetemi Ido, Y. Arakawa","doi":"10.1109/GROUP4.2015.7305918","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305918","url":null,"abstract":"We investigate the layer thickness dependence of the excess carrier lifetime of germanium on silicon by means of time-resolved photoluminescence. We find that a bulk lifetime > 90 ns is achievable for the undoped germanium.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123924875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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