{"title":"锗在硅上外延生长层的过量载流子寿命","authors":"S. Kako, K. Oda, Tetemi Ido, Y. Arakawa","doi":"10.1109/GROUP4.2015.7305918","DOIUrl":null,"url":null,"abstract":"We investigate the layer thickness dependence of the excess carrier lifetime of germanium on silicon by means of time-resolved photoluminescence. We find that a bulk lifetime > 90 ns is achievable for the undoped germanium.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Excess carrier lifetime in epitaxially grown layers of germanium on silicon\",\"authors\":\"S. Kako, K. Oda, Tetemi Ido, Y. Arakawa\",\"doi\":\"10.1109/GROUP4.2015.7305918\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigate the layer thickness dependence of the excess carrier lifetime of germanium on silicon by means of time-resolved photoluminescence. We find that a bulk lifetime > 90 ns is achievable for the undoped germanium.\",\"PeriodicalId\":244331,\"journal\":{\"name\":\"2015 IEEE 12th International Conference on Group IV Photonics (GFP)\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-10-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 12th International Conference on Group IV Photonics (GFP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2015.7305918\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2015.7305918","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Excess carrier lifetime in epitaxially grown layers of germanium on silicon
We investigate the layer thickness dependence of the excess carrier lifetime of germanium on silicon by means of time-resolved photoluminescence. We find that a bulk lifetime > 90 ns is achievable for the undoped germanium.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
