光子BiCMOS技术中高比特率单片集成接收器的制造

2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-26 DOI:10.1109/GROUP4.2015.7305923

D. Knoll, S. Lischke, L. Zimmermann, A. Awny, M. Kroh, A. Peczek, K. Voigt, K. Petermann

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引用次数: 5

摘要

我们介绍了光子BiCMOS工艺开发的结果，使制造40Gbps及以上的单片集成接收器成为可能。重点是同时制造具有足够带宽的200GHz SiGe hbt和Ge光电二极管的挑战。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Fabrication of high bit rate, monolith ically integrated receivers in photonic BiCMOS technology

We present results of photonic BiCMOS process development enabling the fabrication of monolithically integrated receivers for 40Gbps and beyond. Focus is on the challenge to fabricate simultaneously 200GHz SiGe HBTs and Ge photodiodes with enough bandwidth.

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2015 IEEE 12th International Conference on Group IV Photonics (GFP)

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