用快速熔体生长法在Si衬底上制备梯度Ge1−xSnx光电探测器

2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-26 DOI:10.1109/GROUP4.2015.7305982

C. Tseng, Jia-Jiun Gao, Li-Chuan Weng, N. Na, E. Chen, Ming-Chang M. Lee

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引用次数: 1

摘要

在Si衬底上的Ge1-xSnx金属-半导体-金属(MSM)光电探测器中观察到2000 nm波长的近红外吸收。该装置采用熔体快速生长法制备，锡的梯度浓度可达5-10%。

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Graded Ge1−xSnx photodetectors fabricated on Si substrates by rapid melt growth method

Near-infrared absorption at 2000-nm wavelength is observed in a Ge1-xSnx metal-semiconductor-metal (MSM) photodetector on a Si substrate. The device is fabricated by rapid melt growth method with graded Sn concentration up to 5-10%.

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2015 IEEE 12th International Conference on Group IV Photonics (GFP)

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