高拉伸应变锗的电子能带结构非线性模型

2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-26 DOI:10.1109/GROUP4.2015.7305955

J. Escalante, A. Gassenq, S. Tardif, K. Guiloy, N. Pauc, F. Rieutord, V. Calvo, G. O. Dias, D. Rouchon, J. Widiez, J. Hartmann, D. Fowler, A. Chelnokov, V. Reboud, I. Duchemin, Y. Niquet

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引用次数: 3

摘要

我们提出了一种基于紧密结合方法的非线性模型，以获得锗在Γ-bandgap周围的导电性和价带的演变作为变形的函数。

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Non-linear model of electronic band structure to highly tensile-strained Germanium

We propose a non-linear model based on tight-binding method to obtain, as a function of deformation, the evolution of conduction and valence band around Γ-bandgap of germanium.

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2015 IEEE 12th International Conference on Group IV Photonics (GFP)

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