52nd Annual Device Research Conference最新文献_第5页

In/sub 0.29/Al/sub 0.71/As/In/sub 0.3/Ga/sub 0.7/As heterostructure devices grown on GaAs substrates with a metamorphic buffer design In/sub 0.29/Al/sub 0.71/As/In/sub 0.3/Ga/sub 0.7/As异质结构器件在GaAs衬底上的变质缓冲设计

52nd Annual Device Research Conference Pub Date : 1994-06-20 DOI: 10.1109/DRC.1994.1009456

Y. Chan, J. Chyi, C. Wu, H. Hwang, M. Yang, R. Lin, J. Shieh

引用次数: 0

High-brightness green light-emitting diodes 高亮度绿色发光二极管

52nd Annual Device Research Conference Pub Date : 1994-06-20 DOI: 10.1109/DRC.1994.1009458

D. Eason, W. C. Hughes, J. Ren, K. Bowers, Z. Yu, J. Cook, J. Schetzina, G. Cantwell, W. Harsh

引用次数: 8

SrTiO3-channel thin-film transistor srtio3通道薄膜晶体管

52nd Annual Device Research Conference Pub Date : 1994-06-20 DOI: 10.1109/DRC.1994.1009417

K. Gotoh, H. Takauchi, A. Yoshida, H. Tamura, N. Yokoyama

引用次数: 0

Micromachined vertical three-dimensional micro-fresnel lenses for free-space integrated micro-optics 用于自由空间集成微光学的微机械垂直三维微菲涅耳透镜

52nd Annual Device Research Conference Pub Date : 1994-06-20 DOI: 10.1109/DRC.1994.1009439

S. Lee, L.Y. Lin, K. Pister, M. Wu

{"title":"Micromachined vertical three-dimensional micro-fresnel lenses for free-space integrated micro-optics","authors":"S. Lee, L.Y. Lin, K. Pister, M. Wu","doi":"10.1109/DRC.1994.1009439","DOIUrl":"https://doi.org/10.1109/DRC.1994.1009439","url":null,"abstract":"We report the first fabrication of vertical three-dimensional micro-Fresnel lenses with polysilicon materials by surface micromachining technique. Micro-Fresnel lenses play a very important role in micro-optics because of their thin film structures and their ability to achieve very short focal lengths. Although micro-Fresnel lenses have been studied and well understood [ 11, the lens planes usually are restrained on the surface of the substrate. Therefore, their abilities of integration with other optoelectronic components in micro-optics are limited. In this paper, we present a vertical three-dimensional binary-phase micro-Fresnel lens which overcomes the disadvantage of conventional micro-fresnel lenses and is able to rotate out of the plane and stands perpendicular to the substrate. This lens and other similarly constructed micro-optical elements can shrink the whole free-space optical system to a single micro-chip. They have applications in free-space optical interconnect, packaging and optical storage. The fabrication of the vertical micro-Fresnel lens has been reported [2]. The lens plate is supported by micro-hinges and spring latches [3]. In this paper, we report the coupling experiments of semiconductor laser diodes and optical fibers using the vertical micro-Fresnel lens. The schematic structure of the micro-Fresnel lens is shown in Fig. 1. A 1.3pm laser diode or an optical fiber is placed at the focal point of the lens to collimate the optical beams. The collimated beam profile is shown in Fig. 2 and Fig. 3 for laser diode and optical fiber sources, respectively. The divergence angles of the laser diode 2Oox4O0, and the collimated beam shows an elliptical contour. A circular contour is observed for the collimated beam from optical fibers, which has a divergence angle of 7.0”. The collimated beam has a divergence angle of 0.43”. The threedimensional beam profile is also shown. The collecting efficiency of the lens is higher than 50%. Efficiency can be further improved by using transmissive binary lens rather than brighvdark Fresnel lens. Since the vertical micro-Fresnel lenses and other similarly fabricated threedimensional micro-optical components can be pre-aligned during the design stage of the layout, they can be integrated in a micro-chip with other active micro-optical elements such as semiconductor lasers and isolators. Therefore, we believe that they are very promising in the integrated micro-optics. In conclusion, a micromachined vertical three-dimensional micro-Fresnel is demonstrated, It is shown to be very successful in collimating beams fiom both an optical fiber tip and directly from a semiconductor laser. With the micro-Fresnel lens’ unique three-dimensional structure and with other similarly fabricated three-dimensional micro-optical components such as rotatable mirrors, beam-splitters and gratings, we can implement integrable free-space optics with this technique, These results &ow a promising hture in reducing the cost","PeriodicalId":244069,"journal":{"name":"52nd Annual Device Research Conference","volume":"53 92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126074869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

"A sub-0.25/spl mu/m symmetric super self-aligned gate hjfet witn reduced gate fringing capacitance fabricated using electroless au plating and collimated sputtering" 采用化学镀金和准直溅射技术制备的小于0.25/spl mu/m对称超自对准栅极边缘电容

52nd Annual Device Research Conference Pub Date : 1994-06-20 DOI: 10.1109/DRC.1994.1009449

S. Wada, M. Tokushima, M. Fukaishi, N. Matsuno, H. Yano, H. Hida

引用次数: 4

Detuning of gain and reflectivity spectra and its effect on the output characteristics of vertical cavity surface emitting lasers 增益和反射率谱的失谐及其对垂直腔面发射激光器输出特性的影响

52nd Annual Device Research Conference Pub Date : 1994-06-20 DOI: 10.1109/DRC.1994.1009438

J. Bae, C. McMahon, D. Patel, C. Menoni, S. Feld, C. Wilmsen, H. Temkin, T. Uchida, P. Brusenbach, R. Leibenguth

引用次数: 2

A novel bipolar injection coupled power mosfet (bifet) 一种新型双极注入耦合功率moset (bifet)

52nd Annual Device Research Conference Pub Date : 1994-06-20 DOI: 10.1109/DRC.1994.1009403

J. Ajit, D. Kinzer

引用次数: 2

Resonant-cavity light emitting diodes with organic semiconductors 有机半导体谐振腔发光二极管

52nd Annual Device Research Conference Pub Date : 1994-06-20 DOI: 10.1109/DRC.1994.1009394

A. Dodabalapur, L.J. Rothbergi, T. M. Miller

引用次数: 0

Novel capacitor-less high density low power vertical memory 新型无电容高密度低功耗垂直存储器

52nd Annual Device Research Conference Pub Date : 1994-06-20 DOI: 10.1109/DRC.1994.1009423

S. Tiwari, H. Hanafi, A. Hartstein, E. Crabbé, A. R. Powell, S. Iyer, E. Tierney

引用次数: 3

Direct gate-controlled NDR characteristics in surface tunnel transistor 表面隧道晶体管的直接门控NDR特性

52nd Annual Device Research Conference Pub Date : 1994-06-20 DOI: 10.1109/DRC.1994.1009418

T. Uemura, T. Baba

{"title":"Direct gate-controlled NDR characteristics in surface tunnel transistor","authors":"T. Uemura, T. Baba","doi":"10.1109/DRC.1994.1009418","DOIUrl":"https://doi.org/10.1109/DRC.1994.1009418","url":null,"abstract":"Tunneling devices have attracted much interest because of their increased functionality due to NDR characteristics and inherently high-speed switching characteristics. Various tunnel transistors based on resonant tunneling have been studied up to now. Recently, we proposed a new tunnel device, the surface tunnel transistor (STT)'-'), in which an interband tunneling current between a degenerate n+-channel and p'-drain is controlled by a gate voltage. In order to implement the STT, we have developed a new fabrication process 'utilizing MBE regrowth techniques and observed the direct modulation of NDR characteristics by the gate in the new structure. Moreover, utilizing these NDR characteristics of the STT, a bistable circuit consisting of only two components (one STT and one load resistor) was realized and its operation was successfully confirmed. An STT with a VMOS-like structure was fabricated using a GaAdAlGaAs heterostructure. A 500-nm n+-GaAs source (n=lxlO\" cm-'), a 200-nm i-GaAs layer, and a 150-nm p+-GaAs drain (p=1x1020 ~ m ~ ) were successively grown by MBE at 520 \"C. In this device, it is important that the drain region should be highly degenerate and have a sharp doping interface with the i region. After making a sloped mesa structure by wet-chemical etching down to the source layer, the surface was cleaned at 410 \"C using hydrogen radicals generated by cracking with a W-filament to regrow a channel and a gate layer, Since the residual oxygen at the regrown interface causes an increase of the valley current which weakens the NDR characteristics, it is important that the residual oxygen concentration be made as low as possible. Next, a 12-nm n+-GaAs channel (n=lxlO\" cm\"), a 40-nm i-Ab,Ga,7As gate insulator and a 10-nm p+-GaAs gate electrode (p=7x1Ol9 ~ m ~ ) were regrown by MBE at 520 \"C. An interband tunneling junction is formed between the n+-channel and the p+-drain. After delimiting the gate region, the source, gate and drain electrodes were formed using lift-off techniques. The drain current of the fabricated STT exhibits clear NDR characteristics at room temperature under forward drain-bias condition. When the gate voltage changes from -0.8 V to 0.8 V, the peak-to-valley current ratio (PVR) increases from 1.25 to 4.80 and the peak current increases from 0.029 to 0.32 pA/pm. This increase of both PVR and peak current density with increasing the gate voltage reflects the direct modulation of the tunneling junction by the gate. In order to demonstrate the functionality of the STT, a bistable circuit was implemented consisting of only one STT and a 21-WZ load resistor connected to the drain in series. Bistable operation with output drain voltages of V,=0.25 V and Vp0.35 V was obtained at VG=0.4 V. Since the NDR characteristics can be controlled by the gate voltage, switching between these output levels can be performed by applying a voltage pulse to the gate, When the positive (negative) pulse of 0.2 V is applied to the gate, the drain","PeriodicalId":244069,"journal":{"name":"52nd Annual Device Research Conference","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125376664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3