52nd Annual Device Research Conference最新文献

{"title":"Metal-semiconductor-metal photodiodes on textured silicon membranes","authors":"H.C. Lee, B. Zeghbroeck","doi":"10.1109/DRC.1994.1009442","DOIUrl":"https://doi.org/10.1109/DRC.1994.1009442","url":null,"abstract":"High-speed and high-responsivity silicon photodetectors, which can be readily integrated with electronics, would make silicon-based optoelectronic receivers the preferred technology for short distance fiber-optic and free-space optical communication.. However, the long absorption length in silicon (-10 pm at 830 nm) results in detectors with a poor high-speed response. Previous work [l-31 focused on reducing the absorption length by reducing the wavelength (1 pm at 630 nm and 0.1 pm at 400 nm) even though fiber attenuation is more favorable at longer wavelength, whilc light sources are more readily available at 830 nm. In this paper, we present a novel silicon Metal-Semiconductor-Metal (MSM) photodetector structure with a 3.0 GHz bandwidth and 0.17 A/W DC responsivity at 830 nm. The fabrication process is simple and relies on conventional silicon fabrication processes. The structure is an interdigitated MSM detector fabricated on a silicon membrane. The back surface of the membrane is textured to trap the light within the membrane. This detector provides good absorption at longer wavelengths without sacrificing bandwidth. The membrane is created by reactive ion etching using CF4. The back surface is RIE-textured in an Ar/CF4 mixture. Transmission through a 5 pm membrane was measured to be 7.8%, compared to 30% for an untextured membrane, demonstrating the increased absorption. The MSM detector has a finger width of 2.5 km and a finger spacing of 3.75 pm. The bulk detector prior to membrane creation had a responsivity of 0.24 A/W and an internal quantum efficiency of 80% at 5 V. After membrane fabrication, front illumination of the detectors show a responsivity of 0.17 A/W and an internal quantum efficiency of 60%, compared to 0.21 A/W and 45% for back illumination. The transient response of the detectors was obtained by applying 830 nm optical pulses from a current spiked GaAs laser diode. The transient response of the novel detector at 10 V shows a full-width-half-maximum (FWHM) of 74 ps and a fall time of 128 ps. The -3 dB bandwidth is 3.0 GHz (2.7 GHz at 5 V bias) as determined from the fourier transform of the pulse response. For comparison we measured the detector prior to membrane formation. The pulse response showed a FWHM of 267 ps and a bandwidth of 326 MHz at 10 V bias, which clearly demonstrates the effect of the membrane. In summary we have fabricated a novel high-speed silicon detector which can bc integrated with silicon circuits. The detector can be illuminated from either side of the membrane, It was demonstrated to have a superior bandwidth and similar responsivity at 830 nm compared to previously published silicon MSM detectors [l] measured at 630 nm, despite the much larger absorption length.","PeriodicalId":244069,"journal":{"name":"52nd Annual Device Research Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123065932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characterization of degradation mechanisins in GaAs/AlGaas heterojunction bipolar transistors","authors":"M. Frei, C. Abernathy, T. Chiu, T.R. Fullowan, J. Lothian, R. Montgomery, S. Pearton, F. Ren, P.R. Smith, C. W. Snyder, B. Tseng, J. Weiner, P. Wisk","doi":"10.1109/DRC.1994.1009429","DOIUrl":"https://doi.org/10.1109/DRC.1994.1009429","url":null,"abstract":"The devices are fabricated using similar structures grown by MOMBE', with Sn and C as dopants. The growth sequence includes a 62 nm GaAs base ( p = 7 ~ 1 0 ' ~ c m ~ ) , a 7 nm GaAs undoped spacer, and a 80 nm Alo.25 Gao.75 As emitter (n= 6x lo'* cm). The main fabrication technology uses a self-aligned process based on dry etching with AuGe metallization and ion-implant isolation, This process, which we refer to as the \"implant process\", is similar to that described in ref. 2, but with a tri-layer lift-off ste for the base metallization and higher implant doses. The implant includes total doses of 1 . 8 ~ 1OI6 cmH+ and 1014cm-2 F+ and is followed by annealing at 53OOC. A second process (the \"W process\") replaces the AuGe metallization with WSi, and the ion-implantation with mesa isolation and a semiplanarized geometry.","PeriodicalId":244069,"journal":{"name":"52nd Annual Device Research Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124995785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Novel silicon carbide mosfet's for monolithic integrated circuits","authors":"R. Siergiej, A. Agarwal, A. Burk, R. C. Clarke, H. Hobgood, P. McMullin, P. A. Orphanos, S. Sriram, T.J. Smith, C. Brandt","doi":"10.1109/DRC.1994.1009400","DOIUrl":"https://doi.org/10.1109/DRC.1994.1009400","url":null,"abstract":"Silicon carbide is well suited for high frequency power devices due to its high saturated electron velocity, high thermal conductivity, and high-breakdown field strength. While much of the focus of silicon carbide device research has been to demonstrate high frequency MESFET transistors, we describe a silicon carbide MOSFET with superior drive, gain, and high temperature performance. In addition, these MOSFET's have been configured in demonstration circuits revealing the first silicon carbide monolithic integrated circuits. One inch diameter, 6H p-type silicon carbide wafers were used as the starting material. Appropriately doped nand n+ epitaxial layers were grown by the chemical vapor deposition pmcess. The devices were mesa isolated using reactive ion etching. The gate oxide was grown with a thermal oxidation. Contacts to the drain and source were made with nickel and sintered using RTA. Electron beam direct write lithography was used to define the gates to obtain precise alignment and dimensional control.","PeriodicalId":244069,"journal":{"name":"52nd Annual Device Research Conference","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116811417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High temperature device characterstics of GaAs MESFETs fabricated with an AlAs buffer layer","authors":"G. Trombley, C. Havasy, R.G.-H. Lee, R. Reston, C. Ito, T. Jenkins","doi":"10.1109/DRC.1994.1009450","DOIUrl":"https://doi.org/10.1109/DRC.1994.1009450","url":null,"abstract":"High temperature electronics (HTE) are required for automotive, aircraft, space and other applications exposed to thermal extremes. Many HTE efforts have focused on very wide bandgap semiconductors (>2.5eV) such as Sic, GaN and diamond [l], [2]. However, GaAs (a more mature technology) also shows promise for high temperature applications (<400\"C) because it provides a reasonably wide bandgap (1.42eV) with high mobility. Unfortunately, when GaAs MESFETs are evaluated at temperatures greater than 250°C large subthreshold drain currents degrade device performance by reducing switching ratios and increasing output conductances [3]. A potential solution to the problem of large subthreshold currents is explored in this investigation. By incorporating an undoped AMs buffer layer beneath the active channel of a GaAs MESFET, a marked reduction in subthreshold current is observed at temperatures as high as 350°C.","PeriodicalId":244069,"journal":{"name":"52nd Annual Device Research Conference","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123509847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Technology for monolithic integration of ridge-guided quantum well lasers and AlGaAs/GaAs/AlGaAs-HEMT electronics","authors":"W. Bronner, J. Hornung, K. Kohler, W. Benz, E. Olander, J. Ralston","doi":"10.1109/DRC.1994.1009398","DOIUrl":"https://doi.org/10.1109/DRC.1994.1009398","url":null,"abstract":"","PeriodicalId":244069,"journal":{"name":"52nd Annual Device Research Conference","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114747331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Static random access memories based on resonant interband tunneling diodes in the InAs/GaSb/AlSb material system","authors":"J. Shen, G. Kramer, S. Tehrani, H. Goronkin, T. Zhu, R. Tsui","doi":"10.1109/DRC.1994.1009419","DOIUrl":"https://doi.org/10.1109/DRC.1994.1009419","url":null,"abstract":"We have fabricated SRAM's based on resonant interband tunneling diodes in the InAs/AlSb/GaSb material sys- tem. The bistability and the switching principles are demon- strated. Numerical simulations of the memory characteristics of the SRAM cell are performed and used for comparing with experiments. Several key issues involving the applications of the device are also discussed. (a) (b) Fig. 1. The equivalent circuit and layer structure of the RITD-based SRAM's. The cell is selected when a differential voltage between VD and V,, are. applied. The structure is based on the InAs/AlSb/GaSb material system. (a) A scheme that uses a tunneling diode connected to the middle node. (b) The cross section of an SRAM cell.","PeriodicalId":244069,"journal":{"name":"52nd Annual Device Research Conference","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133750457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High quantum efficiency and narrow detection bandwidth of a resonant In/sub 0.53/Ga/sub 0.47/As photodector using the wafer fusing","authors":"I. Tan, J. Bowers, E. Hu, B. Miller","doi":"10.1109/DRC.1994.1009444","DOIUrl":"https://doi.org/10.1109/DRC.1994.1009444","url":null,"abstract":"","PeriodicalId":244069,"journal":{"name":"52nd Annual Device Research Conference","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127287308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Lateral field enhanced band-trap-band tunneling current in a 0.5/spl mu/m \"OFF\" state MOSFET","authors":"T. Wang, C. Huang, T. Chang, J. Chou, C. Chang","doi":"10.1109/DRC.1994.1009422","DOIUrl":"https://doi.org/10.1109/DRC.1994.1009422","url":null,"abstract":"considerable interest. In this work, we develop an interface trap assisted two-step tunneling model in n-MOSFET's, which includes hole tunneling from interface traps to the valence band and electron tunneling from interface traps to the conduction band. In our model, the electron occupation factor of the interface traps &(E) is equated below since for the number of trapped electrons in the interface traps is unchanged in steady state. Recently, the effect of a ot carrier stress generated interface traps on GIDL has received","PeriodicalId":244069,"journal":{"name":"52nd Annual Device Research Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121394723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characteristics of long wavelength infrared detectors using p-Si/sub 1-x/Ge/sub x//Si multiple quantum wells","authors":"D. Robbins, M. Stanaway, S. Millidge, W. Y. Leong, R. Carline, N. Gordon","doi":"10.1109/DRC.1994.1009435","DOIUrl":"https://doi.org/10.1109/DRC.1994.1009435","url":null,"abstract":"We report the first systematic study of p-Si,-,Ge,/Si quantum well infrared photodetectors (QWIPs) grown by low pressure vapour phase epitaxy, including detailed structural, electrical and opticaI characterisation. The growth method is compatible with industrial production, and the devices are potentially suitable as photoconductive detectors operating in normal incidence in large 2-D thermal imaging arrays. Structures have been grown with different numbers of periods and different QW widths, Si,-,Ge, compositions and doping levels. The Si barrier layers are typically 50nm thick and the p-Si contacts are ohmic. Representative characteristics for a 200pm diameter, mesa-isolated, 50 period device under 2V bias are a peak (7.2pm) quantum efficiency of 1 % for a single optical pass, differential resistances of 16MQ at 56K and 170kQ at 75K, and a 1OkHz noise current of 6.5E-13 A/*z at 77K.","PeriodicalId":244069,"journal":{"name":"52nd Annual Device Research Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132603287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Short channel immunity and current drive capabilities of recessed mosfets in the sub-50 mn regime","authors":"E. Dubois, P. Bricout","doi":"10.1109/DRC.1994.1009426","DOIUrl":"https://doi.org/10.1109/DRC.1994.1009426","url":null,"abstract":"IIntroduction Silicon technology is now entering in the sub 0.1 pm range of channel length. In this deep submicron regime, the operating voltage has to be reduced for power dissipation, device reliability and speed performance considerations [ 11. Several scaling analysis have been proposed to explore the ultimate limits of MOSFETs. According to the technological complexity, the outer limit of scaling was found to be 50 and 30 nm in [2] and [3], for epitaxial and dual gate structures, respectively. The control of short channel effects (e.g. threshold voltage roll-off and subthreshold swing increase) severely limits the scaling below 50nm of channel length in conventional planar structures as in [2]. On the other hand, the dual gate structure proposed in [3] exhibits reasonable subthreshold characteristics but still represents a technological challenge and requires gate work function controllability for threshold adjustment. A recessed channel structure is proposed as a technological compromise between dual gate and conventional planar structures. The immunity with respect to short channel effects and the current drive capabilities are extensively studied using drift-diffusion and Monte Carlo simulations.","PeriodicalId":244069,"journal":{"name":"52nd Annual Device Research Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134430624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}