M. Frei, C. Abernathy, T. Chiu, T.R. Fullowan, J. Lothian, R. Montgomery, S. Pearton, F. Ren, P.R. Smith, C. W. Snyder, B. Tseng, J. Weiner, P. Wisk
{"title":"Characterization of degradation mechanisins in GaAs/AlGaas heterojunction bipolar transistors","authors":"M. Frei, C. Abernathy, T. Chiu, T.R. Fullowan, J. Lothian, R. Montgomery, S. Pearton, F. Ren, P.R. Smith, C. W. Snyder, B. Tseng, J. Weiner, P. Wisk","doi":"10.1109/DRC.1994.1009429","DOIUrl":null,"url":null,"abstract":"The devices are fabricated using similar structures grown by MOMBE', with Sn and C as dopants. The growth sequence includes a 62 nm GaAs base ( p = 7 ~ 1 0 ' ~ c m ~ ) , a 7 nm GaAs undoped spacer, and a 80 nm Alo.25 Gao.75 As emitter (n= 6x lo'* cm). The main fabrication technology uses a self-aligned process based on dry etching with AuGe metallization and ion-implant isolation, This process, which we refer to as the \"implant process\", is similar to that described in ref. 2, but with a tri-layer lift-off ste for the base metallization and higher implant doses. The implant includes total doses of 1 . 8 ~ 1OI6 cmH+ and 1014cm-2 F+ and is followed by annealing at 53OOC. A second process (the \"W process\") replaces the AuGe metallization with WSi, and the ion-implantation with mesa isolation and a semiplanarized geometry.","PeriodicalId":244069,"journal":{"name":"52nd Annual Device Research Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"52nd Annual Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1994.1009429","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The devices are fabricated using similar structures grown by MOMBE', with Sn and C as dopants. The growth sequence includes a 62 nm GaAs base ( p = 7 ~ 1 0 ' ~ c m ~ ) , a 7 nm GaAs undoped spacer, and a 80 nm Alo.25 Gao.75 As emitter (n= 6x lo'* cm). The main fabrication technology uses a self-aligned process based on dry etching with AuGe metallization and ion-implant isolation, This process, which we refer to as the "implant process", is similar to that described in ref. 2, but with a tri-layer lift-off ste for the base metallization and higher implant doses. The implant includes total doses of 1 . 8 ~ 1OI6 cmH+ and 1014cm-2 F+ and is followed by annealing at 53OOC. A second process (the "W process") replaces the AuGe metallization with WSi, and the ion-implantation with mesa isolation and a semiplanarized geometry.
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