高亮度绿色发光二极管

52nd Annual Device Research Conference Pub Date : 1994-06-20 DOI:10.1109/DRC.1994.1009458

D. Eason, W. C. Hughes, J. Ren, K. Bowers, Z. Yu, J. Cook, J. Schetzina, G. Cantwell, W. Harsh

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引用次数: 8

摘要

利用由znse - znese层组成的II-VI异质结构制备了工作在纯绿色光谱区域(508-514 nm)峰值波长的高亮度绿色发光二极管。最亮的器件产生792 μ W (10 mA, 4V)，峰值为510 nm。这相当于2%的外部效率和8.0流明/瓦的发光性能。

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High-brightness green light-emitting diodes

II-VI heterostructures composed of ZnSe-ZnTeSe layers have been employed to develop high-brightness green light-emitting diodes operating at peak wavelengths in the pure green spectral region (508-514 nm). The brightest devices produce 792 mu W (10 mA, 4V) peaked at 510 nm. This corresponds to an external efficiency of 2% and a luminous performance of 8.0 lumen/W.

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52nd Annual Device Research Conference

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