2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)最新文献_第8页

Application of New Metal-Oxide Memristor Models in Digital and Analog Electronic Circuits 新型金属氧化物忆阻器模型在数字和模拟电路中的应用

2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) Pub Date : 2023-07-03 DOI: 10.1109/SMACD58065.2023.10192136

S. Kirilov, V. Mladenov

{"title":"Application of New Metal-Oxide Memristor Models in Digital and Analog Electronic Circuits","authors":"S. Kirilov, V. Mladenov","doi":"10.1109/SMACD58065.2023.10192136","DOIUrl":"https://doi.org/10.1109/SMACD58065.2023.10192136","url":null,"abstract":"Memristors, as novel nonlinear electronic components are under intensive analyses, owing to their excellent switching and memory properties, low power usage, nano-sizes, and good compatibility to traditional CMOS integrated chips. They are applicable in electronic schemes, incorporated in chips. Engineering of memristor circuits presents opportunities for design of chips with ultra-high density and many applications. In the last years, several modified and enhanced memristor models, built on the frequently used standard models are proposed. They are simplified, with a good accuracy and high operating rate. The aim of this paper is to present the applicability of the enhanced models in electronic schemes and a comparison of their properties and performance in LTSPICE environment. Several schemes, as memory crossbars, logic gates, neural nets, and various reconfigurable circuits are analyzed. The modified memristor models are compared to various standard models, according to different criteria, as operating frequency, precision, simulation time, switching properties and complexity. The major advantages of the improved models are represented – fast operation, good convergence, accuracy, and applicability in complex electronic devices and circuits.","PeriodicalId":239306,"journal":{"name":"2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123271077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

A Procedural Generator for the Sizing and Physical Synthesis of a MOSFET Low-Side Driver 用于MOSFET低侧驱动器尺寸和物理合成的程序生成器

2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) Pub Date : 2023-07-03 DOI: 10.1109/SMACD58065.2023.10192153

David Demiri, G. Capodivacca, Daniele Privato, Husni M. Habal, Florian Renneke

引用次数: 0

Under Cover: On-FPGA Coverage Monitoring by Netlist Instrumentation 下表:Netlist Instrumentation的fpga覆盖监控

2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) Pub Date : 2023-07-03 DOI: 10.1109/SMACD58065.2023.10192205

Manuel Jirsak, Henning Siemen, Jonas Lienke, Martin Grabmann, Eric Schäfer, Georg Gläser

引用次数: 0

Wide-Band Shared LNA for Large Scale Neural Recording Applications 大规模神经记录应用的宽带共享LNA

2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) Pub Date : 2023-07-03 DOI: 10.1109/SMACD58065.2023.10192164

Alessandro Fava, F. Centurelli, Andrea Vittimberga, G. Scotti

引用次数: 0

Low-Gm CMOS Transconductors with Wide Tuning Range for Bioimpedance Spectroscopy 生物阻抗光谱宽调谐范围的低gm CMOS传感器

2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) Pub Date : 2023-07-03 DOI: 10.1109/SMACD58065.2023.10192142

Israel Corbacho, J. M. Carrillo, J. L. Ausín, M. A. Domínguez, R. Pérez-Aloe, J. F. Duque-Carrillo

{"title":"Low-Gm CMOS Transconductors with Wide Tuning Range for Bioimpedance Spectroscopy","authors":"Israel Corbacho, J. M. Carrillo, J. L. Ausín, M. A. Domínguez, R. Pérez-Aloe, J. F. Duque-Carrillo","doi":"10.1109/SMACD58065.2023.10192142","DOIUrl":"https://doi.org/10.1109/SMACD58065.2023.10192142","url":null,"abstract":"Two techniques to design a low-transconductance (Gm) widely-tunable transconductor are described. The operation principle consists in both cases in the subtraction of two nominally equal transconductances, one of which can be electronically tuned. The circuit implementation differs, being one solution based on the use of source followers (SF), a linearization resistor, and a tunable current mirror, and consisting the other approach of differential pairs (DP) with resistive source degeneration, and an electronically programmable current biasing. Both transconductors have been designed in 180 nm CMOS technology to operate with 1.8 V. The SF and DP solutions achieve a minimum Gm nominal value of 1.38 nA/V and 6.03 nA/V, respectively, with a simulated transconductance tuning range of 729.6× and 7129.4×, also respectively, obtained from a Montecarlo analysis. The application of the transconductors to the design of a second-order Gm − C bandpass filter for signals separation in multi-sine bioimpedance spectroscopy is also addressed.","PeriodicalId":239306,"journal":{"name":"2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127154076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design Strategies to Select the Best Locations in a Ring Oscillator PUF 环形振荡器PUF中最佳位置选择的设计策略

2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) Pub Date : 2023-07-03 DOI: 10.1109/SMACD58065.2023.10192224

Raúl Aparicio-Téllez, M. Garcia-Bosque, Guillermo Díez-Señorans, C. Sánchez-Azqueta, S. Celma

引用次数: 0