用于MOSFET低侧驱动器尺寸和物理合成的程序生成器

David Demiri, G. Capodivacca, Daniele Privato, Husni M. Habal, Florian Renneke
{"title":"用于MOSFET低侧驱动器尺寸和物理合成的程序生成器","authors":"David Demiri, G. Capodivacca, Daniele Privato, Husni M. Habal, Florian Renneke","doi":"10.1109/SMACD58065.2023.10192153","DOIUrl":null,"url":null,"abstract":"A flow is presented to build procedural generators for analog integrated circuits at the transistor level. It includes procedural schematic sizing, design centering, layout generation, and post-layout verification. The procedures for front and backend generation are jointly constructed to make use of the same set of design parameters and geometric constraints. The flow is used to write a generator for the MOSFET low-side driver of a dcdc boost converter. Physical layout area, electrical performance, and design effort are comparable to the results of a conventional manual design of the same circuit. The real benefit is in generator reuse following changes in the specifications or technology.","PeriodicalId":239306,"journal":{"name":"2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)","volume":"135 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Procedural Generator for the Sizing and Physical Synthesis of a MOSFET Low-Side Driver\",\"authors\":\"David Demiri, G. Capodivacca, Daniele Privato, Husni M. Habal, Florian Renneke\",\"doi\":\"10.1109/SMACD58065.2023.10192153\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A flow is presented to build procedural generators for analog integrated circuits at the transistor level. It includes procedural schematic sizing, design centering, layout generation, and post-layout verification. The procedures for front and backend generation are jointly constructed to make use of the same set of design parameters and geometric constraints. The flow is used to write a generator for the MOSFET low-side driver of a dcdc boost converter. Physical layout area, electrical performance, and design effort are comparable to the results of a conventional manual design of the same circuit. The real benefit is in generator reuse following changes in the specifications or technology.\",\"PeriodicalId\":239306,\"journal\":{\"name\":\"2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)\",\"volume\":\"135 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-07-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMACD58065.2023.10192153\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMACD58065.2023.10192153","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

提出了在晶体管级构建模拟集成电路程序生成器的流程。它包括程序原理图尺寸,设计定心,布局生成和布局后验证。利用同一组设计参数和几何约束条件,联合构造了前端和后端生成程序。该流程用于为直流升压变换器的MOSFET低侧驱动器编写生成器。物理布局面积,电气性能和设计工作量可与传统的手动设计相同电路的结果相媲美。真正的好处是在规范或技术更改后可以重用生成器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Procedural Generator for the Sizing and Physical Synthesis of a MOSFET Low-Side Driver
A flow is presented to build procedural generators for analog integrated circuits at the transistor level. It includes procedural schematic sizing, design centering, layout generation, and post-layout verification. The procedures for front and backend generation are jointly constructed to make use of the same set of design parameters and geometric constraints. The flow is used to write a generator for the MOSFET low-side driver of a dcdc boost converter. Physical layout area, electrical performance, and design effort are comparable to the results of a conventional manual design of the same circuit. The real benefit is in generator reuse following changes in the specifications or technology.
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