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2008 IEEE 21st International Conference on Micro Electro Mechanical Systems最新文献

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Magnetic beads retention device for on-chip sandwich immuno-assay 片上夹心免疫测定用磁珠保留装置
2008 IEEE 21st International Conference on Micro Electro Mechanical Systems Pub Date : 2008-01-28 DOI: 10.1109/MEMSYS.2008.4443623
F. Lacharme, C. Vandevyver, M. Gijs
{"title":"Magnetic beads retention device for on-chip sandwich immuno-assay","authors":"F. Lacharme, C. Vandevyver, M. Gijs","doi":"10.1109/MEMSYS.2008.4443623","DOIUrl":"https://doi.org/10.1109/MEMSYS.2008.4443623","url":null,"abstract":"We propose a new and original concept for the precise positioning and the geometrical retention of self-assembled magnetic microbeads in a structured microchannel. When brought in a homogeneous magnetic field, a solution of 500 nm diameter magnetic microbeads self-assembles in magnetic chains in the large sections of a periodically enlarge microchannel, thereby decreasing their magnetic dipolar energy. The self-assembled magnetic chains are retained over the cross-section of the microchannel in a flow velocity up to ~1 mm.s-1, and strongly interact with the analytes of the solution. Our device is able to perform full on-chip direct and sandwich immuno-assays, in a total assay time of less than 30 min. It consumes nanoliters of sample and reagent solutions, with a fluorescent detection limit of ~1 ng.mL-1 for biotinylated rabbit immunoglobulin G (IgG) and mouse IgG in the direct and two-site immuno-assay test, respectively.","PeriodicalId":233133,"journal":{"name":"2008 IEEE 21st International Conference on Micro Electro Mechanical Systems","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133736427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Mechanical characterization of SiC film at high temperatures by tensile test 高温拉伸试验对SiC薄膜力学性能的影响
2008 IEEE 21st International Conference on Micro Electro Mechanical Systems Pub Date : 2008-01-28 DOI: 10.1109/MEMSYS.2008.4443689
S. Nakao, T. Ando, L. Chen, M. Mehregany, K. Sato
{"title":"Mechanical characterization of SiC film at high temperatures by tensile test","authors":"S. Nakao, T. Ando, L. Chen, M. Mehregany, K. Sato","doi":"10.1109/MEMSYS.2008.4443689","DOIUrl":"https://doi.org/10.1109/MEMSYS.2008.4443689","url":null,"abstract":"This paper reports the mechanical properties of silicon carbide (SiC) films at elevated temperatures up to 500degC. Poly-crystalline SiC film (poly-SiC) was deposited by LPCVD on a silicon wafer and patterned into a free-standing specimen on an \"on-chip\" tensile test device. The fracture strength of poly-SiC films showed little temperature dependence over the test temperature range. The tensile strength was 2.89 GPa at room temperature (RT), and decreased slightly to 2.66 GPa at 500degC. The fracture surface at 500degC showed almost the same morphology as that at RT, without any slippage. The potential of SiC films as a material for micromechanical devices working at high temperatures has been heretofore confirmed.","PeriodicalId":233133,"journal":{"name":"2008 IEEE 21st International Conference on Micro Electro Mechanical Systems","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133830441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Active switching of surface plasmon polariton using MEMS actuators 利用MEMS作动器实现表面等离子激元的主动开关
2008 IEEE 21st International Conference on Micro Electro Mechanical Systems Pub Date : 2008-01-28 DOI: 10.1109/MEMSYS.2008.4443772
X.M. Zhang, W.M. Zhu, H. Cai, A. Liu
{"title":"Active switching of surface plasmon polariton using MEMS actuators","authors":"X.M. Zhang, W.M. Zhu, H. Cai, A. Liu","doi":"10.1109/MEMSYS.2008.4443772","DOIUrl":"https://doi.org/10.1109/MEMSYS.2008.4443772","url":null,"abstract":"This paper presents a movable gold waveguide for switching surface plasmon polariton (SPP) using the MEMS technology, which provides a simple but effective way to route the SPP. The input waveguide is patterned on top of a cantilever beam, and can be actuated to align the input to one of the two output gold waveguides fixed on the substrate. The gold waveguides are 2- mum wide and 40-nm thick patterned on a silicon substrate through a SiO2 layer. This is the first attempt to realize active switching function of SPP and would help push the SPP from physical study to applicable devices.","PeriodicalId":233133,"journal":{"name":"2008 IEEE 21st International Conference on Micro Electro Mechanical Systems","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133876328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Study on the lower resolution limit and the temperature-dependent performance of a surface micromachined gyroscope 表面微机械陀螺仪分辨率下限及温度相关性能研究
2008 IEEE 21st International Conference on Micro Electro Mechanical Systems Pub Date : 2008-01-28 DOI: 10.1109/MEMSYS.2008.4443794
A. Kulygin, C. Kirsch, P. Schwarz, U. Schmid, H. Seidel
{"title":"Study on the lower resolution limit and the temperature-dependent performance of a surface micromachined gyroscope","authors":"A. Kulygin, C. Kirsch, P. Schwarz, U. Schmid, H. Seidel","doi":"10.1109/MEMSYS.2008.4443794","DOIUrl":"https://doi.org/10.1109/MEMSYS.2008.4443794","url":null,"abstract":"This paper reports on the characterization of a novel micromachined angular rate sensor with a single point mechanical suspension targeted for automotive applications. In detail, the lower resolution limit of the sensor element was determined at application-relevant ambient pressure levels ranging from 1 to 10 mbar. Furthermore, the temperature-dependent performance of the gyroscope was measured at an ambient pressure of 3 mbar which was found to be an optimized value for achieving high performance at acceptable excitation voltage levels. The temperature coefficients of sensitivity (TCS) and frequency (TCF) were determined experimentally in a custom-built measurement set-up.","PeriodicalId":233133,"journal":{"name":"2008 IEEE 21st International Conference on Micro Electro Mechanical Systems","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122125494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Aeromems pressure sensor array featuring through-wafer vias for high-resolution wall pressure measurements Aeromems压力传感器阵列具有通过晶圆孔的高分辨率壁压力测量
2008 IEEE 21st International Conference on Micro Electro Mechanical Systems Pub Date : 2008-01-28 DOI: 10.1109/MEMSYS.2008.4443801
A. Berns, H. Ngo, U. Buder, E. Obermeier
{"title":"Aeromems pressure sensor array featuring through-wafer vias for high-resolution wall pressure measurements","authors":"A. Berns, H. Ngo, U. Buder, E. Obermeier","doi":"10.1109/MEMSYS.2008.4443801","DOIUrl":"https://doi.org/10.1109/MEMSYS.2008.4443801","url":null,"abstract":"Design, fabrication, and characterization of novel MEMS (micro electromechanical system) pressure sensors featuring sealed through-wafer vias (TWV) and back side bond pads are presented. Thus the sensors can be flush mounted in a printed circuit board (PCB) and contacted on the back side. A linear sensor array consisting of 16 sensor chips has been realized employing a surface alignment and embedding technique. By avoiding flow disturbing bond wires and conducting paths on the front side of the PCB, the device is ideally suited for accurate and high-resolution wall pressure measurements in turbulent flows.","PeriodicalId":233133,"journal":{"name":"2008 IEEE 21st International Conference on Micro Electro Mechanical Systems","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115845307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
“Membrane micro emboss following excimer laser ablation (MeME-X) process” for pressure-driven micro active catheter 压力驱动微主动导管的“准分子激光消融(MeME-X)后膜微压花工艺”
2008 IEEE 21st International Conference on Micro Electro Mechanical Systems Pub Date : 2008-01-28 DOI: 10.1109/MEMSYS.2008.4443593
M. Ikeuchi, K. Ikuta
{"title":"“Membrane micro emboss following excimer laser ablation (MeME-X) process” for pressure-driven micro active catheter","authors":"M. Ikeuchi, K. Ikuta","doi":"10.1109/MEMSYS.2008.4443593","DOIUrl":"https://doi.org/10.1109/MEMSYS.2008.4443593","url":null,"abstract":"We have developed MeME-X process to break-through the conventional miniaturization limit of the pressure-driven micro active catheter by two orders of magnitude. The world's smallest micro active catheter of r~200mum was successfully fabricated using MeME-X process. The catheter was made of thin biocompatible polymer membrane and actuated just by water pressure for safe intravascular surgery.","PeriodicalId":233133,"journal":{"name":"2008 IEEE 21st International Conference on Micro Electro Mechanical Systems","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125114812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
Maskless selective electrochemically assisted wet etching of metal layers for 3D micromachined SOI RF MEMS devices 3D微加工SOI RF MEMS器件金属层的无掩膜选择性电化学辅助湿法蚀刻
2008 IEEE 21st International Conference on Micro Electro Mechanical Systems Pub Date : 2008-01-28 DOI: 10.1109/MEMSYS.2008.4443673
M. Sterner, N. Roxhed, G. Stemme, J. Oberhammer
{"title":"Maskless selective electrochemically assisted wet etching of metal layers for 3D micromachined SOI RF MEMS devices","authors":"M. Sterner, N. Roxhed, G. Stemme, J. Oberhammer","doi":"10.1109/MEMSYS.2008.4443673","DOIUrl":"https://doi.org/10.1109/MEMSYS.2008.4443673","url":null,"abstract":"This paper presents a novel method for selective local removal of metal layers using maskless, electrochemically assisted wet etching. This method has been developed, investigated and successfully applied to the fabrication of three-dimensional micromachined silicon-on-insulator-based radio-frequency transmission lines with embedded laterally actuated microswitches, consisting of a silicon core covered by a gold metallization layer. The full-wafer sputtered metallization layer must be locally removed to guarantee a well defined, low-reflections and low-loss signal propagation in the transmission line. Gold areas to be etch are exposed to a 1.2 V potential difference to a saturated calomel reference electrode in a NaCl(aq) solution. Further, the selective removal of the metallization on the stoppers of laterally moving electrostatic actuators has been shown to drastically reduce the mechanical wear on the stopper tip.","PeriodicalId":233133,"journal":{"name":"2008 IEEE 21st International Conference on Micro Electro Mechanical Systems","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131673528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Implantable parylene-based wireless intraocular pressure sensor 植入式聚苯乙烯无线眼压传感器
2008 IEEE 21st International Conference on Micro Electro Mechanical Systems Pub Date : 2008-01-28 DOI: 10.1109/MEMSYS.2008.4443592
Po-Jui Chen, D. Rodger, S. Saati, M. Humayun, Y. Tai
{"title":"Implantable parylene-based wireless intraocular pressure sensor","authors":"Po-Jui Chen, D. Rodger, S. Saati, M. Humayun, Y. Tai","doi":"10.1109/MEMSYS.2008.4443592","DOIUrl":"https://doi.org/10.1109/MEMSYS.2008.4443592","url":null,"abstract":"This paper presents a novel implantable, wireless, passive pressure sensor for ophthalmic applications. Two sensor designs incorporating surface-micromachined variable capacitor and variable capacitor/inductor are implemented to realize the pressure sensitive components. The sensor is monolithically microfabricated using parylene as a biocompatible structural material in a suitable form factor for increased ease of intraocular implantation. Pressure responses of the microsensor are characterized on-chip to demonstrate its high pressure sensitivity (> 7000 ppm/mmHg) with mmHg level resolution. An in vivo animal study verifies the biostability of the sensor implant in the intraocular environment after more than 150 days. This sensor will ultimately be implanted at the pars plana or iris of the eye to fulfill continuous intraocular pressure (IOP) monitoring in glaucoma patients.","PeriodicalId":233133,"journal":{"name":"2008 IEEE 21st International Conference on Micro Electro Mechanical Systems","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132863894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 44
Four-degree-of-freedom solid state MEMS joystick 四自由度固态MEMS操纵杆
2008 IEEE 21st International Conference on Micro Electro Mechanical Systems Pub Date : 2008-01-28 DOI: 10.1109/MEMSYS.2008.4443599
P. Gieschke, J. Richter, J. Joos, P. Ruther, O. Paul
{"title":"Four-degree-of-freedom solid state MEMS joystick","authors":"P. Gieschke, J. Richter, J. Joos, P. Ruther, O. Paul","doi":"10.1109/MEMSYS.2008.4443599","DOIUrl":"https://doi.org/10.1109/MEMSYS.2008.4443599","url":null,"abstract":"This paper reports on a novel four-degree-of-freedom solid state joystick. It consists of a rigid polymer cylinder with spherical dome on top of a CMOS chip. The sensor chip with a size of 2.0times2.5 mm2 contains 10 octagonal stress sensors distributed across the surface exploiting the shear piezoresistive effect in silicon. The joystick shows a linear response of its integrated stress sensors to forces Fx, Fy, and Fz up to 5 N and to a moment Mz up to 5 mNm. For calibration, the sensitivities towards these loads were measured individually. The Moore-Penrose inverse of the sensitivity matrix enables the extraction of these four loads from the vector of the piezoresistor signals.","PeriodicalId":233133,"journal":{"name":"2008 IEEE 21st International Conference on Micro Electro Mechanical Systems","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117314279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Addressable fluidic gate arrays for layer-to-layer parallel fluidic transportation system 层对层平行流体输送系统的可寻址流体门阵列
2008 IEEE 21st International Conference on Micro Electro Mechanical Systems Pub Date : 2008-01-28 DOI: 10.1109/MEMSYS.2008.4443713
T. Morimoto, S. Konishi
{"title":"Addressable fluidic gate arrays for layer-to-layer parallel fluidic transportation system","authors":"T. Morimoto, S. Konishi","doi":"10.1109/MEMSYS.2008.4443713","DOIUrl":"https://doi.org/10.1109/MEMSYS.2008.4443713","url":null,"abstract":"This paper presents addressable fluidic gate arrays for layer to layer parallel fluidic transportation system. Various valve systems for switching of in-plane fluidic network are studied in muTAS. Presented addressable fluidic gate is composed of double-valves driven by pneumatic pressure. One of the double-valves is controlled by row channel and the other is controlled by column channel for row/column addressing. Our study applies addressable fluidic gate arrays to layer to layer transportation beyond in-plane fluidic network system. The layer to layer transportation makes it possible to collect targeted samples from a testing well plate. 3 x 3 fluidic gate arrays based on the presented concept will be demonstrated. Demonstrated fluidic system is based on all PDMS structures. Technically, this paper also reports a dome shape chamber for high sealing and a switching valve having bi-stable diaphragm for memory function.","PeriodicalId":233133,"journal":{"name":"2008 IEEE 21st International Conference on Micro Electro Mechanical Systems","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121334299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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