发布求助
文献互助 智能选刊 最新文献

Microwave and Millimeter-Wave Monolithic Circuits最新文献

筛选
英文 中文
X-Band Monolithic Series Feedback LNA x波段单片串联反馈LNA
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1900-01-01 DOI: 10.1109/MCS.1985.1113638
R. Lehmann, D. Heston
{"title":"X-Band Monolithic Series Feedback LNA","authors":"R. Lehmann, D. Heston","doi":"10.1109/MCS.1985.1113638","DOIUrl":"https://doi.org/10.1109/MCS.1985.1113638","url":null,"abstract":"An X-band monolithic three-stage low noise amplifier (LNA) employing series feedback has demonstrated 1.8 dB noise figure with 30.0 dB gain and an input VSWR less than 1.2:1 at 10 GHz. The key to this design is using monolithic technology to obtain an exactly repeatable series feedback inductance to achieve a simultaneous noise match and input VSWR match.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121388944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Air Bridge Gate FET for GaAs Monolithic Circuits 用于GaAs单片电路的气桥栅场效应晶体管
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1900-01-01 DOI: 10.1109/MCS.1985.1113641
E. Bastida, G. Donzelli
{"title":"Air Bridge Gate FET for GaAs Monolithic Circuits","authors":"E. Bastida, G. Donzelli","doi":"10.1109/MCS.1985.1113641","DOIUrl":"https://doi.org/10.1109/MCS.1985.1113641","url":null,"abstract":"The paper describes a novel technology for producing micron and submicron gate FET devices, with improved gain and noise performances. The technique is particularly attractive for the production of very low noise devices and is very useful in monolithic circuit fabrication. In the production of high-power devices the technique has the advantage of not requiring complicated interdigitated structures. A noise figure improvement of 0.4 dB at 10 GHz was achieved using this technology. As an example of the developed technique, a two-stage monolithic preamplifier (2.8 dB N.F., 15 dB gain between 11.7 and 12.5 GHz) is described.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"167 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132828279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Dual Function Mixer Circuit for Millimeter Wave Transceiver Applications 用于毫米波收发器的双功能混频器电路
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1900-01-01 DOI: 10.1109/MCS.1985.1113644
A. Chu, W. Courtney, L. Mahoney, M. Manfra, A. Calawa
{"title":"Dual Function Mixer Circuit for Millimeter Wave Transceiver Applications","authors":"A. Chu, W. Courtney, L. Mahoney, M. Manfra, A. Calawa","doi":"10.1109/MCS.1985.1113644","DOIUrl":"https://doi.org/10.1109/MCS.1985.1113644","url":null,"abstract":"A monolithic mixer circuit capable of performing either a receiver or transmitter function has been fabricated. The mode of operation is determined by applying either forward bias or reverse bias to a pair of mixer diodes. The circuit integrates Schottky-barrier diodes, bias lines, Ta/sub 2/O/sub 5/ blocking and by-pass capacitors, a radial line stub filter and a microstrip branch-line coupler. For the receiver function the unit exhibits a conversion loss of 6.5 +- 0.5 dB from 34 to 36 GHz. For the transmitter function the circuit directs the signal from the local oscillator port to the antenna port with an insertion loss of approximately 2 dB at 33.5 GHz over a bandwidth of 1 GHz.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133213337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Wideband GaAs MMIC Receiver 宽带GaAs MMIC接收机
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1900-01-01 DOI: 10.1109/MCS.1987.1114525
D.C. Yang, R. Esfandiari, T.S. Lin, T. O'Neill
{"title":"Wideband GaAs MMIC Receiver","authors":"D.C. Yang, R. Esfandiari, T.S. Lin, T. O'Neill","doi":"10.1109/MCS.1987.1114525","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114525","url":null,"abstract":"A wideband GaAs MMIC receiver module has been developed using half-micron gate MESFET technology. The fabrication process used is optical lithography with ion-implanted undoped LEC GaAs wafers. The module consists of three generic monolithic chips: an RF amplifier, an IF amplifier, and an image rejection filter which is integrated on a dual-gate MESFET mixer chip. The RF input frequency is 6 to 10 GHz and the IF output is at 3 GHz. Test results have shown an overall conversion gain of more than 20 dB, and less than a 5.5 dB noise figure. The isolation batwean RF and IF ports is better than 22 dB, between LO and IF is more than 30 dB, and between LO and RF isolation is 20 dB. The DC functional yield of more than 70-80% has also been achieved for each chip type.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130037713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
DC-40 GHz and 20-40 GHz MMIC SPDT Switches DC-40 GHz和20-40 GHz MMIC SPDT开关
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1900-01-01 DOI: 10.1109/MCS.1987.1114521
M. Schindler, A. Morris
{"title":"DC-40 GHz and 20-40 GHz MMIC SPDT Switches","authors":"M. Schindler, A. Morris","doi":"10.1109/MCS.1987.1114521","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114521","url":null,"abstract":"Monolithic GaAs SPDT switches operating from dc to 40 GHz and 20 to 40 GHz have been demonstrated. The switches use MESFETs with the same characteristics as a mm-wave amplifier to allow for ease of integration in the future. The gate length is 0.35 microns, and ion implanted material is used. The 20-40 GHz switch uses a combination of shunt FETs and quarter-wave transformers. Better than 2 dB insertion loss and 25 dB isolation have been achieved. The dc-40 GHz switch uses a combination of series and shunt FETs. Better than 3 dB insertion loss and 23 dB isolation have been achieved. Power handling and switching speed have also been measured for both switch types.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133263511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 27
A Low Cost, 3-7 GHz, 1/2 Watt MMIC GaAs Amplifier 低成本，3-7 GHz, 1/2瓦MMIC GaAs放大器
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1900-01-01 DOI: 10.1109/MCS.1986.1114470
S. Moghe, R. Genin
{"title":"A Low Cost, 3-7 GHz, 1/2 Watt MMIC GaAs Amplifier","authors":"S. Moghe, R. Genin","doi":"10.1109/MCS.1986.1114470","DOIUrl":"https://doi.org/10.1109/MCS.1986.1114470","url":null,"abstract":"A low cost, 3-7 GHz, 1/2 Watt MMIC GaAs amplifier has been successfully designed and tested. The amplifier features small chip size (1.2 mm sq.), high gain (12 +-1.5 dB), high power added efficiency (20%), good RF yield (57%) and high tolerance to process variations. Packaged amplifiers were built with this chip for both the 2-6 GHz and the 5.9-6.4 GHz bands. Saturated output power of 25 dBm was achieved in the 2-6 GHz band, and 27 dBm in the 5.9-6.4 GHz band.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129090746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Power Distributed Amplifier Using Constant-R Networks 基于恒r网络的功率分布式放大器
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1900-01-01 DOI: 10.1109/MCS.1986.1114471
E. Chase, W. Kennan
{"title":"A Power Distributed Amplifier Using Constant-R Networks","authors":"E. Chase, W. Kennan","doi":"10.1109/MCS.1986.1114471","DOIUrl":"https://doi.org/10.1109/MCS.1986.1114471","url":null,"abstract":"This paper describes the design, implemental ion and performance of a power distributed amplifier with a minimum gain of 5dB , input and output VSWR less than 1.5:1, and greater than 22dBm of 1dB compressed power over the 2 to 18GHz band. This amplifier makes use of several circuit design advances to improve both bandwidth and power capability and measures 1.0mm by 1.4mm (1.4 sq. mm).","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124786864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
A Low Noise Distributed Amplifier with Gain Control 具有增益控制的低噪声分布式放大器
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1900-01-01 DOI: 10.1109/MCS.1987.1114529
C. Hutchinson, W. Kennan
{"title":"A Low Noise Distributed Amplifier with Gain Control","authors":"C. Hutchinson, W. Kennan","doi":"10.1109/MCS.1987.1114529","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114529","url":null,"abstract":"A 2 to 18GHz monolithic GaAs distributed amplifier has been developed with 17dB nominal gain, less than 2.0:1 input and output VSWR, less than 6.0dB noise figure, and greater than 40dB gain control . The chip size at 3.0 sq. mm. (1.63mm by 1.88mm) makes it cost effective for a wide variety of applications.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115193131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nonlinear Slow-Wave Propagation On Periodic Schottky Coplanar Lines 周期性肖特基共面线上的非线性慢波传播
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1900-01-01 DOI: 10.1109/MCS.1985.1113630
D. Jager
{"title":"Nonlinear Slow-Wave Propagation On Periodic Schottky Coplanar Lines","authors":"D. Jager","doi":"10.1109/MCS.1985.1113630","DOIUrl":"https://doi.org/10.1109/MCS.1985.1113630","url":null,"abstract":"Nonlinear wave propagation along periodic Schottky slow-wave structures with voltage dependent capacitance is analytically described by simple wave equations. As an examplary result of the theory, a special structure is proposed which can be used for traveling-wave second harmonic generation or parametric amplification with high efficiency. This is experimentally verified on a model line.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126980522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A 30 GHz Monolithic Receiver 30ghz单片接收机
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1900-01-01 DOI: 10.1109/MCS.1986.1114492
L.C.T. Liu, C.S. Liu, J. Kessler, S. Wang
{"title":"A 30 GHz Monolithic Receiver","authors":"L.C.T. Liu, C.S. Liu, J. Kessler, S. Wang","doi":"10.1109/MCS.1986.1114492","DOIUrl":"https://doi.org/10.1109/MCS.1986.1114492","url":null,"abstract":"Several monolithic integrated circuits have been developed to make a 30 GHz receiver. The LNA chip has 7 dB noise figure with 14 dB gain. The IF amplifier has 13 dB gain with 30 dB control range. The mixer and phase shifter have conversion loss and insertion loss of 10.5 dB and 1.6 dB, respectively.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131219552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信