DC-40 GHz and 20-40 GHz MMIC SPDT Switches

Abstract

Monolithic GaAs SPDT switches operating from dc to 40 GHz and 20 to 40 GHz have been demonstrated. The switches use MESFETs with the same characteristics as a mm-wave amplifier to allow for ease of integration in the future. The gate length is 0.35 microns, and ion implanted material is used. The 20-40 GHz switch uses a combination of shunt FETs and quarter-wave transformers. Better than 2 dB insertion loss and 25 dB isolation have been achieved. The dc-40 GHz switch uses a combination of series and shunt FETs. Better than 3 dB insertion loss and 23 dB isolation have been achieved. Power handling and switching speed have also been measured for both switch types.