A Low Noise Distributed Amplifier with Gain Control

Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1900-01-01 DOI:10.1109/MCS.1987.1114529

C. Hutchinson, W. Kennan

引用次数: 0

Abstract

A 2 to 18GHz monolithic GaAs distributed amplifier has been developed with 17dB nominal gain, less than 2.0:1 input and output VSWR, less than 6.0dB noise figure, and greater than 40dB gain control . The chip size at 3.0 sq. mm. (1.63mm by 1.88mm) makes it cost effective for a wide variety of applications.

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具有增益控制的低噪声分布式放大器

研制了一种2 ~ 18GHz单片GaAs分布式放大器，其标称增益为17dB，输入输出驻波比小于2.0:1，噪声系数小于6.0dB，增益控制大于40dB。芯片尺寸为3.0平方。Mm (1.63mm × 1.88mm)使其在各种应用中具有成本效益。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Microwave and Millimeter-Wave Monolithic Circuits

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