{"title":"DC-40 GHz和20-40 GHz MMIC SPDT开关","authors":"M. Schindler, A. Morris","doi":"10.1109/MCS.1987.1114521","DOIUrl":null,"url":null,"abstract":"Monolithic GaAs SPDT switches operating from dc to 40 GHz and 20 to 40 GHz have been demonstrated. The switches use MESFETs with the same characteristics as a mm-wave amplifier to allow for ease of integration in the future. The gate length is 0.35 microns, and ion implanted material is used. The 20-40 GHz switch uses a combination of shunt FETs and quarter-wave transformers. Better than 2 dB insertion loss and 25 dB isolation have been achieved. The dc-40 GHz switch uses a combination of series and shunt FETs. Better than 3 dB insertion loss and 23 dB isolation have been achieved. Power handling and switching speed have also been measured for both switch types.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"27","resultStr":"{\"title\":\"DC-40 GHz and 20-40 GHz MMIC SPDT Switches\",\"authors\":\"M. Schindler, A. Morris\",\"doi\":\"10.1109/MCS.1987.1114521\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Monolithic GaAs SPDT switches operating from dc to 40 GHz and 20 to 40 GHz have been demonstrated. The switches use MESFETs with the same characteristics as a mm-wave amplifier to allow for ease of integration in the future. The gate length is 0.35 microns, and ion implanted material is used. The 20-40 GHz switch uses a combination of shunt FETs and quarter-wave transformers. Better than 2 dB insertion loss and 25 dB isolation have been achieved. The dc-40 GHz switch uses a combination of series and shunt FETs. Better than 3 dB insertion loss and 23 dB isolation have been achieved. Power handling and switching speed have also been measured for both switch types.\",\"PeriodicalId\":231710,\"journal\":{\"name\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"27\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1987.1114521\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1987.1114521","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Monolithic GaAs SPDT switches operating from dc to 40 GHz and 20 to 40 GHz have been demonstrated. The switches use MESFETs with the same characteristics as a mm-wave amplifier to allow for ease of integration in the future. The gate length is 0.35 microns, and ion implanted material is used. The 20-40 GHz switch uses a combination of shunt FETs and quarter-wave transformers. Better than 2 dB insertion loss and 25 dB isolation have been achieved. The dc-40 GHz switch uses a combination of series and shunt FETs. Better than 3 dB insertion loss and 23 dB isolation have been achieved. Power handling and switching speed have also been measured for both switch types.
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