2016 International Conference on Actual Problems of Electron Devices Engineering (APEDE)最新文献

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Multi-channel vibration measurement machine 多通道振动测量机
D. A. Golushko, A. V. Lysenko, N. Yurkov, P. S. Bushmelev, M. P. Kalaev
{"title":"Multi-channel vibration measurement machine","authors":"D. A. Golushko, A. V. Lysenko, N. Yurkov, P. S. Bushmelev, M. P. Kalaev","doi":"10.1109/APEDE.2016.7879015","DOIUrl":"https://doi.org/10.1109/APEDE.2016.7879015","url":null,"abstract":"The article highlights the problems of the efficiency of vibration test methods and means. It gives the brief overview of existing methods. It also gives characteristics of the developed multi-channel vibration measurement machine, its component parts and the benefits of its application. The test results are given that prove that the developed vibration vibration measurement machine allows to reproduce the necessary vibration characteristics similar to real-life vibration exposure during operation life of an object.","PeriodicalId":231207,"journal":{"name":"2016 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128892385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Global scaling principle for simulation of powerful klystrons with high efficiency 高效强速调管仿真的全局标度原理
A. Baikov, O. Baikova
{"title":"Global scaling principle for simulation of powerful klystrons with high efficiency","authors":"A. Baikov, O. Baikova","doi":"10.1109/APEDE.2016.7878840","DOIUrl":"https://doi.org/10.1109/APEDE.2016.7878840","url":null,"abstract":"The Global Scaling Principle (GSP) is formulated. GSP allows to build a 2,5-parametric class of klystrons fully equivalent to one given prototype. Klystrons included in the constructed class, may differ significantly on the operating frequency, power, voltage, according to the number of rays and other key parameters. At the same time all the physical processes in a class of devices are identical. Accordingly, all klystron output characteristics of a class, including efficiency, gain, bandwidth, etc., are absolutely identical. GSP is very useful for the 2D-simulatiom of multi-beam klystrons. In this case GSP-analog is simulated instead of the initial multi beam klystron.","PeriodicalId":231207,"journal":{"name":"2016 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"2 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127975393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
The features of chip resistors usage in hybrid microwave integrated circuits 片式电阻在混合微波集成电路中的应用特点
A. Nikitin, E. Khabitueva
{"title":"The features of chip resistors usage in hybrid microwave integrated circuits","authors":"A. Nikitin, E. Khabitueva","doi":"10.1109/APEDE.2016.7878855","DOIUrl":"https://doi.org/10.1109/APEDE.2016.7878855","url":null,"abstract":"High frequency measurements from 3 to 15 GHz of chip-resistors are reported in this paper. The chip-resistors under test have been mounted in the gap of the microstrip line in two ways: with the resistive layer up («wrap around») and with the resistive layer down («flip chip»). The impedance of chip-resistors depends on its mounting method. Flip chip mounting method reduces the imaginary part of impedance: reactance value of flip chip mounting can be a few tens of percents less than the same value obtained using the wrap around mounting. Therefore, the refined model of chip-resistors has been designed. These results can be used for improving design efficiency of the microwave devices made by the hybrid technology.","PeriodicalId":231207,"journal":{"name":"2016 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129512295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Algorithm of reducing the time of resolving phase ambiguities of multi-antenna global navigation satellite system by using priori information 利用先验信息减少多天线卫星导航系统相位模糊解算时间的算法
D. Kaleev, A. Pereverzev
{"title":"Algorithm of reducing the time of resolving phase ambiguities of multi-antenna global navigation satellite system by using priori information","authors":"D. Kaleev, A. Pereverzev","doi":"10.1109/APEDE.2016.7879001","DOIUrl":"https://doi.org/10.1109/APEDE.2016.7879001","url":null,"abstract":"Multi-antenna GNSS are widely used in various industries, it consists of three or more L1 GPS receivers. This system provides the high accuracy of relative coordinates determination (centimeter accuracy). The main drawback of this system is a long start period because of the need of resolving phase ambiguities. Analysis of the resolving was held and the method of reducing start time was proposed. It includes Ratio test and search of all candidates of LAMBDA method with a priory limitation and reduces the time the threefold.","PeriodicalId":231207,"journal":{"name":"2016 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127911657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Accurate yield estimation of read access failure sram 读存取失效sram的精确良率估计
D. Skurikhin, A. Korshunov
{"title":"Accurate yield estimation of read access failure sram","authors":"D. Skurikhin, A. Korshunov","doi":"10.1109/APEDE.2016.7879013","DOIUrl":"https://doi.org/10.1109/APEDE.2016.7879013","url":null,"abstract":"This work is focused on accurate calculation SRAM bitline voltage difference as main source of read access failure for deep submicron CMOS design. Accurate estimation minimal voltage difference allows increase memory performance and provide sufficient memory yield. We are considering a worst-case analysis that accounts for weak cells, and presents guidelines to achieve high yield has been proposed, but this method is too pessimistic and results in reduced performance of SRAM. A method to predict the yield of a memory chip based on the cell-failure probability is proposed in our work. The proposed method based on conditional probability of read access failure relatively sense amplifier offset and bitline voltage difference. Obtained experimental results show that discharge time is needed to get a minimal voltage difference can be reduce from 14,5 to 18,1% in 90 nm technological nodes.","PeriodicalId":231207,"journal":{"name":"2016 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121647852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analytical look at the evolution of the electrodynamics characteristics stopband periodic structures 阻带周期结构电动力学特性演变的分析研究
I. Nakrap, A. Savin
{"title":"Analytical look at the evolution of the electrodynamics characteristics stopband periodic structures","authors":"I. Nakrap, A. Savin","doi":"10.1109/APEDE.2016.7878915","DOIUrl":"https://doi.org/10.1109/APEDE.2016.7878915","url":null,"abstract":"The analysis of the waves properties with complex propagation constants in periodic structures without disturbing the periodicity. The results of the electrodynamics characteristics research of different type structures in the wide range of frequencies are presented. The main attention given to study the phenomena the interaction of the normal waves of periodic structures with formation the stopbands with different dispersion laws and sufficiently small finite attenuation.","PeriodicalId":231207,"journal":{"name":"2016 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122432427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electron gun calculation in time domain 电子枪时域计算
V. D. Juravleva, I. P. Medvedkov, V. I. Rogovin, S. O. Semenov
{"title":"Electron gun calculation in time domain","authors":"V. D. Juravleva, I. P. Medvedkov, V. I. Rogovin, S. O. Semenov","doi":"10.1109/APEDE.2016.7878881","DOIUrl":"https://doi.org/10.1109/APEDE.2016.7878881","url":null,"abstract":"The method and code of electron gun calculation in time domain are presented. The Poisson equation in 2D axial region is solved by integral equation method. For modeling in time domain algorithm «step by step» is used. Three meshes — one spherical and two rectangular — are used for potential calculation and equation of motion solving. The consistent scheme of distribution between mesh points of particle charges and calculation of electric field acting on particle is used. This scheme eliminates effect «self-action» of particles. The cathode current is calculated as space charge limited flow. The initial thermal velocities are taken into account.","PeriodicalId":231207,"journal":{"name":"2016 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122618769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electromagnetic field in the resonator of neutron generator's hydrogen ion source 中子发生器氢离子源谐振腔中的电磁场
D. S. Stepanov, A. Chebotarev, E. Shkolnikov
{"title":"Electromagnetic field in the resonator of neutron generator's hydrogen ion source","authors":"D. S. Stepanov, A. Chebotarev, E. Shkolnikov","doi":"10.1109/APEDE.2016.7879076","DOIUrl":"https://doi.org/10.1109/APEDE.2016.7879076","url":null,"abstract":"Determine complex conductivity of the microwave discharge plasma in resonator of the ion source. Using CST Microwave Studio allowed us to calculate dimensions of the resonance microwave window providing necessary reflection coefficient and to find effective amount of microwave discharge plasma from condition of resonance preservation. This makes it possible to determine value of electromagnetic filed in plasma and get it relation with power of electromagnetic wave. Computations show that fulfillment of the condition electron cyclotron resonance results to large reduction of electromagnetic field amplitude.","PeriodicalId":231207,"journal":{"name":"2016 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128718520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Software for recognition of a rectangular pulse signal 用于识别矩形脉冲信号的软件
R. V. Kozhanov, E. R. Kozhanova, A. A. Zaharov
{"title":"Software for recognition of a rectangular pulse signal","authors":"R. V. Kozhanov, E. R. Kozhanova, A. A. Zaharov","doi":"10.1109/APEDE.2016.7879048","DOIUrl":"https://doi.org/10.1109/APEDE.2016.7879048","url":null,"abstract":"The article deals with the software for recognition of rectangular pulse signals with different pulse duration and amplitude, consisting of a head module and the three modules that implement methods on the statistical characteristics — arithmetic mean, variance and standard deviation, based on the continuous wavelet transform (Haar wavelet). A rectangular pulse signal is specified as a sequence of characters — “zeros” and “units”. Recommended for recognition of a rectangular pulse signals with different pulse duration and amplitude, consisting of 10 characters, use the technique based on RMS, as the smallest number of levels for the recognition it gives the best result.","PeriodicalId":231207,"journal":{"name":"2016 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115126665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of level converters standard cells for circuits with clustered voltage scaling 集束电压标度电路用电平变换器标准单元的设计
A. Korshunov
{"title":"Design of level converters standard cells for circuits with clustered voltage scaling","authors":"A. Korshunov","doi":"10.1109/APEDE.2016.7879014","DOIUrl":"https://doi.org/10.1109/APEDE.2016.7879014","url":null,"abstract":"As technology sizes shrink, the developers come upon a problem of static power. Among the different power reduction approaches with multi voltage there are, which can significantly eliminate components of power consumption on system level. But this methods isn't applicable for implementation within functional units. We are considering issues of practical realization such well-known low-level technique as clustered voltage scaling (CVS). We examine six different variants of level converters (LC) and combined flip-flop level converter (LCFF). All presented variants can achieve power reduction in practical implementation of CVS. Obtained experimental results show that proposed LCFF based on pass transistor logic can be reduce delay from 27 to 51% compared to standard LCs without penalty in power consumption.","PeriodicalId":231207,"journal":{"name":"2016 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123531433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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