Solar RRLPub Date : 2026-08-31DOI: 10.1002/solr.70471
Mohamed el A. Kramdi, Aral Karahan, Takeshi Watanabe, Hidehiro Sekimoto, Simon Desbief, Olivier Margeat, Jörg Ackermann, Carmen M. Ruiz Herrero, Christine Videlot-Ackermann
{"title":"Boosting Efficiency and Stability of Air-Processed Blade-Coated All-Polymer Organic Solar Cells Based: The Role of Electron Transport Layer and Additives","authors":"Mohamed el A. Kramdi, Aral Karahan, Takeshi Watanabe, Hidehiro Sekimoto, Simon Desbief, Olivier Margeat, Jörg Ackermann, Carmen M. Ruiz Herrero, Christine Videlot-Ackermann","doi":"10.1002/solr.70471","DOIUrl":"https://doi.org/10.1002/solr.70471","url":null,"abstract":"<p>All-polymer organic photovoltaics (all-PSCs), in which both donor and acceptor are conjugated polymers, have recently achieved power conversion efficiencies (PCEs) approaching ~19%, thanks to nonfullerene acceptor polymers such as PY-IT. However, these high performances are still mainly obtained via spin-coating and halogenated solvents, which limits scalability and environmental compatibility. Developing efficient devices under green, air-processed conditions therefore remain a key challenge, particularly due to the strong sensitivity of polymer morphology. Here, we investigate PM6:PY-IT-based all-PSCs processed by air doctor-blade coating using o-xylene as a nonhalogenated solvent, together with a PM6:Y12 binary reference and an advanced ternary PM6:Y12:PY-IT system. We systematically examine the influence of electron transport layers (PDINN, PFN-Br, and PNDIT-F3N) and processing additives (Tetralin and DMN) on morphology, charge transport, device performance, and stability. The devices are characterized using <i>J</i>–<i>V</i> measurements, grazing-incidence wide-angle X-ray scattering, atomic force microscopy, space-charge-limited current, and ISOS-D-1, ISOS-D-2, and ISOS-L-1 protocols. PM6:PY-IT devices processed with DMN reach a PCE of 16.58% in small areas, and 10.91% upon scaling to 1 cm<sup>2</sup>. DMN enhances molecular ordering, crystallinity, and charge transport compared to Tetralin, particularly in PY-IT-based systems, leading to higher fill factors and performances. While the highest efficiency is obtained with PDINN, PNDIT-F3N offers the best balance between efficiency and stability.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"10 17","pages":""},"PeriodicalIF":4.8,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/solr.70471","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148943737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Solar RRLPub Date : 2026-08-31DOI: 10.1002/solr.70469
Michael F. Miller, Marzieh M. Baan, Rico Gutzler, Ana Kanevce, Theresa Magorian Friedlmeier, Tyler J. Grassman, Aaron R. Arehart
{"title":"Impact of RbF Postdeposition Treatment Dose on Defects and the Barrier at the Back Contact in (Ag, Cu)(In, Ga)Se2 Solar Cells","authors":"Michael F. Miller, Marzieh M. Baan, Rico Gutzler, Ana Kanevce, Theresa Magorian Friedlmeier, Tyler J. Grassman, Aaron R. Arehart","doi":"10.1002/solr.70469","DOIUrl":"https://doi.org/10.1002/solr.70469","url":null,"abstract":"<p>The impact of RbF postdeposition treatment, including the influence of the total RbF dose, on bulk defects and the back contact barrier in (Ag, Cu)(In, Ga)Se<sub>2</sub> (ACIGS) solar cells is investigated. Deep level transient spectroscopy (DLTS) reveals three signatures: H1, H2, and N1. H1 and H2 are attributed to hole traps within the material bulk, and N1 is attributed to the back contact barrier. The H2 trap acts as a recombination center and is found to affect the room temperature capacitance–voltage (<i>C</i>–<i>V</i>) results, necessitating “fast <i>C</i>–<i>V</i>” measurements. The N1 signature has increasing activation energy (barrier height) with increasing RbF dose, and good quantitative agreement is obtained between energies measured using DLTS and admittance spectroscopy, as well as qualitative agreement with current–voltage–temperature (<i>J</i>–<i>V</i>–<i>T</i>) measurements. Macroscale SIMS and nanoscale transmission electron microscopy-based X-ray energy dispersive spectroscopy measurements reveal Rb accumulation at the ACIGS/MoSe<sub>2</sub> interface that increases, along with Rb concentration in the ACIGS bulk, with increasing RbF dose. The accumulation of compensating charges near this interface is proposed to be the explanation for the increased back contact barrier height observed here.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"10 17","pages":""},"PeriodicalIF":4.8,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148943656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Hidden but Not Forgotten: Unraveling and Engineering the Buried Interface of Inverted Perovskite Solar Cells","authors":"Hui Liu, Ruiheng Zhang, Guoquan Wu, Jiangping Xing, Xiaoli Zhang, Baomin Xu","doi":"10.1002/solr.70473","DOIUrl":"https://doi.org/10.1002/solr.70473","url":null,"abstract":"<p>Inverted perovskite solar cells (IPSCs) have achieved significant advancement in photovoltaics contributed by their outstanding optoelectronic properties, showing great potential for industrialization and commercialization. Nevertheless, the efficiency and stability of devices are still largely limited by multiple challenges existing in the buried interface of IPSCs. In recent years, researchers have carried out in-depth investigations and proposed various innovative strategies to address these issues. This review focuses on the most recent progress of IPSCs and systematically probes into the importance and mechanisms governing the buried interface by analyzing challenges associated with interface defects, energy-level mismatch, chemical stability, and morphological uniformity. It comprehensively reviews the advancements in diverse buried-interface strategies from the molecular perspective, including organic materials (organic small molecules and polymers), inorganic salts, and low-dimensional materials (2D layer or 2D/3D heterojunctions, 1D materials, and 0D materials). Furthermore, advanced characterization techniques for the buried interface are summarized focusing on their ability to analyze morphological structure, chemical and electronic states, and carrier dynamics. Finally, we make a conclusion and outline potential challenges and future directions. This review aims to provide a comprehensive theoretical references and guidance for the development of highly efficient and stable IPSCs.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"10 17","pages":""},"PeriodicalIF":4.8,"publicationDate":"2026-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148849328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Solar RRLPub Date : 2026-08-24DOI: 10.1002/solr.70460
Guangze He, Sheng Ma, Zhengping Li, Wenzhong Shen
{"title":"Low Indium and Silver Consumption for High-Efficiency Silicon Heterojunction Solar Cells: Simulating Design of Multilayer TCO and Silver-Coated Copper Electrodes","authors":"Guangze He, Sheng Ma, Zhengping Li, Wenzhong Shen","doi":"10.1002/solr.70460","DOIUrl":"https://doi.org/10.1002/solr.70460","url":null,"abstract":"<p>The rapid scaling of silicon heterojunction (SHJ) solar cell manufacturing is constrained by the scarcity and price volatility of indium and silver. In this study, a low-indium and low-silver SHJ cell structure was designed by Sentaurus TCAD optoelectronic simulation. The optimized configuration adopts a front multilayer transparent conductive oxide (TCO) stack of 5 nm indium tin oxide (ITO)/50 nm aluminum-doped zinc oxide (AZO)/5 nm ITO with a 110 nm SiN<sub><i>x</i></sub>:H antireflection layer, a 70 nm AZO rear TCO layer, and silver-coated copper (Ag@Cu) electrodes with a 25 μm linewidth and 80% copper core ratio. The simulated device reduces indium consumption by 92.8% and silver usage by 80% while reaching a simulated efficiency of 26.76% (open-circuit voltage <i>V</i><sub>oc</sub> = 754.1 mV, short-circuit current density <i>J</i><sub>sc</sub> = 42 mA/cm<sup>2</sup>, and fill factor FF = 84.49%). The simulation-guided design integrates optical compensation by SiN<sub><i>x</i></sub>:H, carrier transport through the ultrathin ITO/AZO/ITO stack, and reduced-shading Ag@Cu electrodes, suggesting a feasible route for lowering critical-metal consumption in high-efficiency SHJ solar cells.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"10 16","pages":""},"PeriodicalIF":4.8,"publicationDate":"2026-08-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148848809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High-Temperature Annealing-Induced Performance Degradation Mechanisms of GaInP/GaAs/Ge Triple-Junction Solar Cells","authors":"Lingyuan Wu, Tianle Shi, Xianfeng Wu, Yanglong Li, Wei Li, Ru Zhou","doi":"10.1002/solr.70457","DOIUrl":"https://doi.org/10.1002/solr.70457","url":null,"abstract":"<p>As a high-efficiency space photovoltaic technology, the high-temperature annealing-induced performance degradation of GaInP/GaAs/Ge triple-junction solar cells has attracted tremendous attention. In this article, rapid annealing (temperature range 600–700 °C, heating rate 40 °C s<sup>−1</sup>) was performed on GaInP/GaAs/Ge solar cells, revealing that high-temperature annealing would cause a significant reduction in the power conversion efficiency (PCE) of devices. Furthermore, a variety of advanced characterization techniques, including time-of-flight secondary ion mass spectrometry, in situ variable-temperature high-resolution transmission electron microscopy, and scanning electron microscopy analysis, were used to systematically study the impacts of annealing conditions on the performance of GaInP/GaAs/Ge solar cells as well as the performance degradation mechanisms. It is revealed that high-temperature annealing induces a variety of negative impacts to GaInP/GaAs/Ge solar cells, such as back electrode damage, interfacial element diffusion, and semiconductor material failure, which further inhibit the carrier collection and destroy the junction regions between sub-cells. Eventually, these unfavorable consequences lead to a significant reduction in the device PCE and even cause complete device operation failure. This work provides meaningful references for studying the temperature-induced performance degradation of GaInP/GaAs/Ge solar cells in specific scenarios.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"10 16","pages":""},"PeriodicalIF":4.8,"publicationDate":"2026-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148783900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Solar RRLPub Date : 2026-08-18DOI: 10.1002/solr.70461
Dawei Duan, Fei Wang, Qiannan Li, Taomiao Wang, Junjun Jin, Tao Zhang, Qidong Tai, Hanlin Hu
{"title":"Ionic Liquid Engineering Induced Hydrogen-Bond Networks for Efficient Wide-Bandgap Perovskite Photovoltaics","authors":"Dawei Duan, Fei Wang, Qiannan Li, Taomiao Wang, Junjun Jin, Tao Zhang, Qidong Tai, Hanlin Hu","doi":"10.1002/solr.70461","DOIUrl":"https://doi.org/10.1002/solr.70461","url":null,"abstract":"<p>Wide-bandgap (WBG, ~1.67 eV) inverted perovskite solar cells (PSCs) are highly promising for tandem photovoltaics, yet their performance is still constrained by defect-induced nonradiative recombination and uncontrolled crystallization kinetics. Herein, we introduce a multifunctional ionic liquid, <i>N</i>-butylsulfonate pyridinium hydrogensulfate (BSPH), to simultaneously regulate crystallization kinetics and defect chemistry in WBG perovskites. Owing to its amphiphilic molecular architecture containing sulfonate, hydrogen sulfate, and pyridinium moieties, BSPH establishes dynamic multisite interactions with perovskite precursors. BSPH not only coordinates strongly with undercoordinated Pb<sup>2+</sup> species, but also forms extensive electrostatic and hydrogen-bonding interactions with FA<sup>+</sup> cations and halide ions, creating a stabilized intermediate-state network during film formation. It effectively suppresses rapid crystallization and regulates crystallization kinetics. Furthermore, the coupled hydrogen-bond networks and electrostatic interactions effectively suppress ion migration and defect formation, leading to reduced trap-state density, suppressed nonradiative recombination, and prolonged carrier lifetime. As a result, the optimized PSC achieves a champion power conversion efficiency of 23.72% and retains over 84.5% of its initial efficiency after 600 h maximum power point tracking. This work highlights ionic-liquid molecular engineering as an effective strategy for cooperative crystallization regulation and defect management in high-performance WBG PSCs.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"10 16","pages":""},"PeriodicalIF":4.8,"publicationDate":"2026-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148784085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Solar RRLPub Date : 2026-08-18DOI: 10.1002/solr.70455
Huijuan Bi, Dingding Qiu, Hao Zhang, Jianqi Zhang, Ailing Tang, Honglei Zhan, Kun Lu
{"title":"Central-Core Cycloalkane Modified Nonfullerene Acceptors Reduce Energy Loss for 20.2% Efficiency in Organic Solar Cells","authors":"Huijuan Bi, Dingding Qiu, Hao Zhang, Jianqi Zhang, Ailing Tang, Honglei Zhan, Kun Lu","doi":"10.1002/solr.70455","DOIUrl":"https://doi.org/10.1002/solr.70455","url":null,"abstract":"<p>In recent years, power conversion efficiency (PCE) has exceeded 21% in organic solar cells (OSCs), thanks to the ongoing innovation of molecular design and device engineering. Among them, central-core engineering is a key strategy for optimizing nonfullerene acceptors (NFAs) to reduce energy loss and enhance charge transport in OSCs. In this work, two novel quinoxaline (Qx)-series NFAs, Qx-CHX and Qx-CP, are designed and synthesized by incorporating a rigid, nonaromatic cycloalkane (cyclohexane and cyclopentane) into the central core, respectively. The theoretical calculations and experiments indicate that, due to the smaller steric hindrance, a more planar molecular backbone, and better donor–acceptor miscibility, the D18:Qx-CP-based devices exhibit superior crystallinity and optimal phase separation, delivering a champion PCE of 18.75% with a low energy loss of 0.48 eV. In comparison, the Qx-CHX-based devices achieve a higher open-circuit voltage (<i>V</i><sub>OC</sub>) of 0.905 V and a PCE of 18.02%. Notably, using Qx-CP as a guest acceptor in the D18:BTP-eC9 system further boosts the PCE to 20.25% with significantly enhanced short-circuit current (<i>J</i><sub>SC</sub>) and fill factor (FF). This work highlights central-core modification as an effective approach for high-performance OSCs.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"10 16","pages":""},"PeriodicalIF":4.8,"publicationDate":"2026-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148784091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Solar RRLPub Date : 2026-08-18DOI: 10.1002/solr.70459
Hongyan Cheng, Hai Liu, Xueyan Ma, Zhengjun Meng, Wenxuan Li, Linfeng Kang, Diao Yang, Xuan Qi, Zhaonuo Wang, Yali Li, Yujun Fu, Deyan He, Junshuai Li
{"title":"Enhancing the Comprehensive Performance of Carbon-Based Hole-Transport-Layer-Free CsPbI2Br Solar Cells via 5-Aminouracil Additive","authors":"Hongyan Cheng, Hai Liu, Xueyan Ma, Zhengjun Meng, Wenxuan Li, Linfeng Kang, Diao Yang, Xuan Qi, Zhaonuo Wang, Yali Li, Yujun Fu, Deyan He, Junshuai Li","doi":"10.1002/solr.70459","DOIUrl":"https://doi.org/10.1002/solr.70459","url":null,"abstract":"<p>Carbon-based hole-transport-layer-free CsPbI<sub>2</sub>Br solar cells are limited by high defect density and inefficient interfacial charge transfer. Herein, 5-aminouracil (5-AU) is introduced as a multifunctional additive to simultaneously regulate bulk defects and interfacial energetics. 5-AU forms Pb–O coordination and hydrogen bonding, effectively suppressing defect states and nonradiative recombination. Meanwhile, during the film fabrication process, a subset of 5-AU molecules can diffuse to the interface of the SnO<sub>2</sub>/CsPbI<sub>2</sub>Br, where they form molecular bridges that facilitate charge extraction and improve energy-level alignment. As a result, the 5-AU-modified device achieves a power conversion efficiency of 15.63% with an exceptional open-circuit voltage of 1.349 V, along with reduced hysteresis and significantly enhanced storage, thermal, and environmental stability.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"10 16","pages":""},"PeriodicalIF":4.8,"publicationDate":"2026-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148784196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Solar RRLPub Date : 2026-08-18DOI: 10.1002/solr.70458
Yu An, Sila Bektaş, Ning Yang, Gence Bektaş, Luobu Danzeng, Xinliang Lou, Yuxuan Li, Jiahui Xu, Huibo Wei, Xueqing Xu, Yongjian Luo, Pierre J. Verlinden
{"title":"Applying Texturization Methods for Luminescent Down-Shifting Films to Enhance the Light Absorption in High-Efficiency Photovoltaic Devices","authors":"Yu An, Sila Bektaş, Ning Yang, Gence Bektaş, Luobu Danzeng, Xinliang Lou, Yuxuan Li, Jiahui Xu, Huibo Wei, Xueqing Xu, Yongjian Luo, Pierre J. Verlinden","doi":"10.1002/solr.70458","DOIUrl":"https://doi.org/10.1002/solr.70458","url":null,"abstract":"<p>Photon management offers a promising strategy to mitigate optical losses and improve the efficiency of photovoltaic devices. In most down-shifting studies, the isotropic emission of down-shifting materials limits the photon utilization. Herein, we combine inverted-pyramid texturization with luminescent down-shifting films to minimize broadband reflection of photovoltaic devices and enhance the utilization of down-shifted photons. The textured architecture increases the energy transfer efficiency of down-shifted photons to 1.3 times that of a flat down-shifting film. For silicon solar cells, the textured down-shifting film yields a total integrated photocurrent enhancement of 2.3% over its flat counterpart. Of this improvement, 0.2% is attributed to the enhanced redirection of down-shifted photons toward the solar cell in the UV region (300–400 nm), while 2.1% originates from broadband light-trapping effect across the full spectrum (400–1180 nm), resulting in a relative efficiency gain of 2.0%. The same strategy is further extended to wide-bandgap perovskite solar cells, delivering a relative efficiency improvement of 2.3% with respect to bare devices, demonstrating the applicability of this optical management approach beyond silicon-based technologies. This work provides insights into the underlying physical phenomena of textured luminescent down-shifting film and optimal design considerations for encapsulation materials in high-performance photovoltaic devices.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"10 16","pages":""},"PeriodicalIF":4.8,"publicationDate":"2026-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148784087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Solar RRLPub Date : 2026-08-17DOI: 10.1002/solr.70452
Bireswar Mandol, Karthik Raitani, Sushobhita Chawla, Prahlad Prajapat, Abhijit Singha, Garima Aggarwal, Kanhaiya Lal, Pradeep R. Nair, K. R. Balasubramaniam
{"title":"Atomic Layer Deposition of AlOx/SnOy Passivating Charge Transport Bilayer for Silicon Solar Cells","authors":"Bireswar Mandol, Karthik Raitani, Sushobhita Chawla, Prahlad Prajapat, Abhijit Singha, Garima Aggarwal, Kanhaiya Lal, Pradeep R. Nair, K. R. Balasubramaniam","doi":"10.1002/solr.70452","DOIUrl":"https://doi.org/10.1002/solr.70452","url":null,"abstract":"<p>Post-deposition treatment of AlO<sub><i>x</i></sub>/SnO<sub><i>y</i></sub> bilayer obtained by atomic layer deposition on FZ n-type Si enhances the effective carrier lifetime beyond values realized with either material individually. The improved passivation is attributed to the 15 nm thick capping SnO<sub><i>y</i></sub> layer, which effectively suppresses outward hydrogen effusion. Replacing the conventional emitter passivation layer in a Passivated Emitter Rear Contact (PERC) cell with this bilayer stack results in an absolute efficiency gain of 2.4% under rear illumination. Device simulations identify the probable mechanisms as improved rear surface passivation and rear-side doping, both induced by the processing conditions of the bilayer. The PC1D simulations predict that processing-induced rear side improvements coupled with the enhanced front side passivation should enable PERC-based cells with bifacial power conversion efficiency exceeding 25%.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"10 15","pages":""},"PeriodicalIF":4.8,"publicationDate":"2026-08-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148783592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}