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2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)最新文献

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Photon-Enhanced Conductivity Modulation and Surge Current Capability in Vertical GaN Power Rectifiers 垂直GaN功率整流器的光子增强电导率调制和浪涌电流能力
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2019-05-19 DOI: 10.1109/ISPSD.2019.8757671
Shaowen Han, Shu Yang, Yongkai Li, Yinxiang Liu, Kuang Sheng
{"title":"Photon-Enhanced Conductivity Modulation and Surge Current Capability in Vertical GaN Power Rectifiers","authors":"Shaowen Han, Shu Yang, Yongkai Li, Yinxiang Liu, Kuang Sheng","doi":"10.1109/ISPSD.2019.8757671","DOIUrl":"https://doi.org/10.1109/ISPSD.2019.8757671","url":null,"abstract":"In this work, we investigate the temperature-dependent forward conduction performance, the reverse recovery behavior and surge current capability of the vertical GaN Schottky barrier diode (SBD) and PN diode (PND). Compared with the SBD, the vertical GaN PND can deliver photon-enhanced conductivity modulation (PECM), temperature-independent differential ON-resistance, and higher surge current capability. It is experimentally verified that the PECM and zero reverse recovery can be simultaneously realized in the vertical GaN PND.","PeriodicalId":225029,"journal":{"name":"2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114542261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Power Challenges Caused by IOT Edge Nodes: Securing and Sensing Our World 物联网边缘节点带来的电力挑战:保护和感知我们的世界
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2019-05-19 DOI: 10.1109/ISPSD.2019.8757597
James Spehar, Adam Fuks, Marc Vauclair, M. Meijer, J. V. van Beek, Bin Shao
{"title":"Power Challenges Caused by IOT Edge Nodes: Securing and Sensing Our World","authors":"James Spehar, Adam Fuks, Marc Vauclair, M. Meijer, J. V. van Beek, Bin Shao","doi":"10.1109/ISPSD.2019.8757597","DOIUrl":"https://doi.org/10.1109/ISPSD.2019.8757597","url":null,"abstract":"This paper discusses power challenges caused by an explosion in data driven application at the Edge of IOT. How technology, power management techniques, machine learning (AI) and energy recycling are evolving to do more computing at the Edge of IOT to solve Power, Data, Communication and Latency issues. The paper will show how innovation is needed to bring different topics together to provide an optimal solution for the power challenges ahead. A use case with biometric security at the edge will be discussed","PeriodicalId":225029,"journal":{"name":"2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"235 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132925243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Operation of ultra-high voltage (>10kV) SiC IGBTs at elevated temperatures: benefits & constraints 超高压(>10kV) SiC igbt在高温下的运行:优点与限制
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2019-05-19 DOI: 10.1109/ISPSD.2019.8757586
Amit K. Tiwari, F. Udrea, N. Lophitis, M. Antoniou
{"title":"Operation of ultra-high voltage (>10kV) SiC IGBTs at elevated temperatures: benefits & constraints","authors":"Amit K. Tiwari, F. Udrea, N. Lophitis, M. Antoniou","doi":"10.1109/ISPSD.2019.8757586","DOIUrl":"https://doi.org/10.1109/ISPSD.2019.8757586","url":null,"abstract":"State of the art TCAD simulation models are used to simulate the performance of ultra-high voltage (10-20 kV) SiC IGBTs in the temperature range 300–775 K. We show that unlike Si-based counterparts, ultra-high voltage SiC IGBTs stand to gain from the temperature rise if the limit is not exceeded. We show that whilst an operation at 375 K is highly promising to achieve the most optimum on-state characteristics from $S$ iC IGBTs, no significant degradation in the on-state current and breakdown voltage alongside with negligible rise in leakage current is observed until 550 K. Therefore, ≥10 kV SiC IGBTs are highly promising for Smart Grid and HVDC.","PeriodicalId":225029,"journal":{"name":"2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114989773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Damage accumulation in GaN GITs exposed to repetitive short-circuit 暴露于重复短路的GaN GITs损伤累积
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2019-05-19 DOI: 10.1109/ISPSD.2019.8757692
F. d’Aniello, A. Fayyaz, A. Castellazzi, T. Oeder, M. Pfost
{"title":"Damage accumulation in GaN GITs exposed to repetitive short-circuit","authors":"F. d’Aniello, A. Fayyaz, A. Castellazzi, T. Oeder, M. Pfost","doi":"10.1109/ISPSD.2019.8757692","DOIUrl":"https://doi.org/10.1109/ISPSD.2019.8757692","url":null,"abstract":"Short-circuit withstand capability is one of the key elements when it comes to the selection of semiconductor power devices in different mainstream power electronics applications (i.e industrial, e-mobility etc). Alongside the single pulse SC robustness, aging of power devices is also of concern when subjected to repetitive SC stress since devices may experience such transient events relatively quite frequently during their lifetime. This paper investigates the effect of repetitive short-circuit robustness on 600 V rated commercially available GaN gate injection transistors (GITs). In particular, monitors of device degradation as stress accumulates on the device under test (DUT) have been reiterated in this paper. Moreover, the effect of SC energy and the applied drain-source bias (VDS) during SC have also been investigated. Lastly, de-capsulation of the degraded devices were also performed for microscopic analysis.","PeriodicalId":225029,"journal":{"name":"2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130272346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Novel 2000 V Normally-off MOS-HEMTs using AlN/GaN Superlattice Channel 基于AlN/GaN超晶格通道的新型2000 V正常关断mos - hemt
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2019-05-19 DOI: 10.1109/ISPSD.2019.8757585
Ming Xiao, Weihang Zhang, Yuhao Zhang, Hong Zhou, Kui Dang, Jincheng Zhang, Y. Hao
{"title":"Novel 2000 V Normally-off MOS-HEMTs using AlN/GaN Superlattice Channel","authors":"Ming Xiao, Weihang Zhang, Yuhao Zhang, Hong Zhou, Kui Dang, Jincheng Zhang, Y. Hao","doi":"10.1109/ISPSD.2019.8757585","DOIUrl":"https://doi.org/10.1109/ISPSD.2019.8757585","url":null,"abstract":"We demonstrate for the first time a GaN-based metal oxide semiconductor high electron mobility transistor (MOS-HEMT) with AlN/GaN superlattice (SL) channels. This new channel structure allows for superior voltage blocking capabilities and thermal stability than conventional GaN channels, as well as higher electron mobility than AlGaN channels. State-of-the-art static and dynamic performance has been achieved in this new MOS-HEMT, including a breakdown voltage over 2000 V, a high ON current density of 768 mA/mm, a threshold voltage (VTH) of 1.0 V, a specific on-resistance ($boldsymbol{R}_{mathbf{ON}}$) of $7.7 mathbf{m}mathbf{Omega}cdot mathbf{cm}^{2}$, thermal stability up to 225 °C and good dynamic RON. These results show the great potential of our novel AlN/GaN-SL-channel MOS-HEMTs for highvoltage and high temperature power switching applications","PeriodicalId":225029,"journal":{"name":"2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"214 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115509829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
High Accurate IGBT/IEGT Compact Modeling for Prediction of Power Efficiency and EMI Noise 高精度IGBT/IEGT紧凑模型预测功率效率和电磁干扰噪声
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2019-05-19 DOI: 10.1109/ISPSD.2019.8757656
T. Mizoguchi, Y. Sakiyama, Naoto Tsukamoto, W. Saito
{"title":"High Accurate IGBT/IEGT Compact Modeling for Prediction of Power Efficiency and EMI Noise","authors":"T. Mizoguchi, Y. Sakiyama, Naoto Tsukamoto, W. Saito","doi":"10.1109/ISPSD.2019.8757656","DOIUrl":"https://doi.org/10.1109/ISPSD.2019.8757656","url":null,"abstract":"This paper presents a newly developed compact model of IGBT/IEGTs for prediction of power-loss and Electro-Magnetic-Interference (EMI) noise accurately. The proposed model focuses on the capacitance changes between each terminal during the switching operation and has two specific features, (1) the gate-emitter capacitance $boldsymbol{C_{ge}}$ formed by non-linear functions which consider the negative capacitance for reproducing the turn-on $mathbf{d}boldsymbol{I}/ mathbf{d}boldsymbol{t}$ and (2) sub-circuits with ideal-diode and $boldsymbol{CR}$ connected to the gate-collector and the collector-emitter for reproducing the turn-off $mathbf{d}boldsymbol{V}/mathbf{d}boldsymbol{t}$ and the tail current. Compared to the conventional model, it was concluded that the proposed model is able to reproduce the measured turn-on and turn-off switching waveform accurately with high convergence.","PeriodicalId":225029,"journal":{"name":"2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115315072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Superior Switching Characteristics of SiC-MOSFET Embedding SBD SiC-MOSFET嵌入SBD的优越开关特性
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2019-05-19 DOI: 10.1109/ISPSD.2019.8757664
T. Tominaga, S. Hino, Yohei Mitsui, J. Nakashima, K. Kawahara, S. Tomohisa, N. Miura
{"title":"Superior Switching Characteristics of SiC-MOSFET Embedding SBD","authors":"T. Tominaga, S. Hino, Yohei Mitsui, J. Nakashima, K. Kawahara, S. Tomohisa, N. Miura","doi":"10.1109/ISPSD.2019.8757664","DOIUrl":"https://doi.org/10.1109/ISPSD.2019.8757664","url":null,"abstract":"Superior switching characteristics of SiC-MOSFET embedding SBD is demonstrated compared with conventional MOSFET and MOSFET with external SBD. Inactivation of parasitic body diode by embedding SBD enables a suppression of recovery charge during turn-on process, which results in a reduction of turn-on loss. Furthermore, elimination of external SBD reduces total chip size, or output capacitance charge, which results in a reduction of output capacitance loss.","PeriodicalId":225029,"journal":{"name":"2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125607924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Estimation of Impact Ionization Coefficient in GaN by Photomulitiplication Measurement Utilizing Franz-Keldysh Effect 利用Franz-Keldysh效应的光电倍增测量估算GaN中的冲击电离系数
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2019-05-19 DOI: 10.1109/ISPSD.2019.8757676
T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, J. Suda
{"title":"Estimation of Impact Ionization Coefficient in GaN by Photomulitiplication Measurement Utilizing Franz-Keldysh Effect","authors":"T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, J. Suda","doi":"10.1109/ISPSD.2019.8757676","DOIUrl":"https://doi.org/10.1109/ISPSD.2019.8757676","url":null,"abstract":"A valanche multiplication characteristics in GaN p-n junction diodes (PNDs) under high reverse bias conditions were investigated. The GaN-on-GaN PNDs with double-side-depleted shallow bevel termination, which showed low reverse leakage current and excellent avalanche capability, were used for the measurements. Under sub-bandgap light illumination, the photocurrents induced by Franz-Keldysh (FK) effect, which can be well reproduced by the theoretical calculations of the optical absorption, and their avalanche multiplications were observed. The multiplication factors were extracted as the ratios of the experimental photocurrents to the calculated FK-induced photocurrent. Under an assumption of equal impact ionization coefficients of electrons and holes, the electric-field dependence of an impact ionization coefficient in GaN were estimated.","PeriodicalId":225029,"journal":{"name":"2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123179921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Driving GaN Power Transistors 驱动GaN功率晶体管
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2019-05-19 DOI: 10.1109/ISPSD.2019.8757603
D. Brian Ma
{"title":"Driving GaN Power Transistors","authors":"D. Brian Ma","doi":"10.1109/ISPSD.2019.8757603","DOIUrl":"https://doi.org/10.1109/ISPSD.2019.8757603","url":null,"abstract":"In order to take full advantage of fast and efficient switching performance of emerging GaN power devices, it is important for circuit designers to understand the unique features of power GaN devices and their limitations. It is also important to appreciate new opportunities and challenges that these new devices have brought to the society. Motivated by this, this paper reviews some critical design issues in developing modern GaN based power ICs, with focus on reliability, noise, efficiency, speed and cost. State-of-art design solutions are also briefly reviewed.","PeriodicalId":225029,"journal":{"name":"2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"60 9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128345288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Integrated Current Sensing in GaN Power ICs GaN功率集成电路中的集成电流传感
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2019-05-19 DOI: 10.1109/ISPSD.2019.8757678
S. Moench, R. Reiner, P. Waltereit, R. Quay, O. Ambacher, I. Kallfass
{"title":"Integrated Current Sensing in GaN Power ICs","authors":"S. Moench, R. Reiner, P. Waltereit, R. Quay, O. Ambacher, I. Kallfass","doi":"10.1109/ISPSD.2019.8757678","DOIUrl":"https://doi.org/10.1109/ISPSD.2019.8757678","url":null,"abstract":"Integrated current sensors at the drain and source of lateral GaN-on-Si power transistors are presented, using the existing resistive metal fingers of large-area comb-structures as shunts. In comb-structures, the finger current flows orthogonal to the channel current, thus the sensor signal is independent from the dynamic channel resistance. At 1MHz pulsed switching of 75 V in a half-bridge converter, the drain and source sensors are characterized (around $4 mathbf{m}Omega$ shunt resistance as part of a $100 mathbf{m}Omega$ transistor) in both high-side and low-side configurations. The measured current sense-ratio temperature coefficient of 0.003/K results mainly from the finger metal and is correctable by integrated linear temperature sensors with a similar coefficient. A readout circuit which proportionally reproduces the continuous external inductor current is implemented by summation of the switched high-side source and low-side drain current sensor signals. Integrated current sensors enable control and protection of GaN HEMTs and ICs, for example in monolithic or co-packaged GaN half-bridges.","PeriodicalId":225029,"journal":{"name":"2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"314 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124460966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
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