Driving GaN Power Transistors

D. Brian Ma
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引用次数: 6

Abstract

In order to take full advantage of fast and efficient switching performance of emerging GaN power devices, it is important for circuit designers to understand the unique features of power GaN devices and their limitations. It is also important to appreciate new opportunities and challenges that these new devices have brought to the society. Motivated by this, this paper reviews some critical design issues in developing modern GaN based power ICs, with focus on reliability, noise, efficiency, speed and cost. State-of-art design solutions are also briefly reviewed.
驱动GaN功率晶体管
为了充分利用新兴GaN功率器件的快速高效开关性能,电路设计人员必须了解GaN功率器件的独特特性及其局限性。认识到这些新设备给社会带来的新机遇和挑战也很重要。基于此,本文综述了开发现代GaN基功率集成电路的一些关键设计问题,重点关注可靠性、噪声、效率、速度和成本。还简要回顾了最先进的设计解决方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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