发布求助
文献互助 智能选刊 最新文献

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)最新文献

筛选
英文 中文
Suppression of Bipolar Degradation in Deep-P Encapsulated 4H-SiC Trench MOSFETs up to Ultra-High Current Density 抑制深p封装4H-SiC沟槽mosfet双极退化至超高电流密度
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2019-05-19 DOI: 10.1109/ISPSD.2019.8757567
Y. Ebihara, Junichi Uehara, Aiko Ichimura, Shuhei Mitani, M. Noborio, Y. Takeuchi, K. Tsuruta
{"title":"Suppression of Bipolar Degradation in Deep-P Encapsulated 4H-SiC Trench MOSFETs up to Ultra-High Current Density","authors":"Y. Ebihara, Junichi Uehara, Aiko Ichimura, Shuhei Mitani, M. Noborio, Y. Takeuchi, K. Tsuruta","doi":"10.1109/ISPSD.2019.8757567","DOIUrl":"https://doi.org/10.1109/ISPSD.2019.8757567","url":null,"abstract":"The bipolar degradation of Deep-p encapsulated 4H-SiC trench MOSFETs was investigated by using the pulse-current conduction system up to ultra-high current density. The fabricated MOSFETs exhibit the low hole injection compared with the PN diodes and conventional MOSFETs, resulted in the fabricated MOSFETs suppressed the bipolar degradation up to a current density of 3000 A/cm2.","PeriodicalId":225029,"journal":{"name":"2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115718988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A Predictive Gate Driver Suitable for Half-Bridge Applications 一种适用于半桥应用的预测栅极驱动器
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2019-05-19 DOI: 10.1109/ISPSD.2019.8757590
Ze-kun Zhou, Yan-dong Yuan, Yunkun Wang, Bo Zhang, Yue Shi
{"title":"A Predictive Gate Driver Suitable for Half-Bridge Applications","authors":"Ze-kun Zhou, Yan-dong Yuan, Yunkun Wang, Bo Zhang, Yue Shi","doi":"10.1109/ISPSD.2019.8757590","DOIUrl":"https://doi.org/10.1109/ISPSD.2019.8757590","url":null,"abstract":"A predictive dead-time (DT) gate driver for half-bridge applications is proposed in this paper. Compared with the conventional DT control methods, the proposed method adopts the DT information of previous cycle to control the state of current cycle, which has distinct merits in avoiding the inherent efficiency loss. Two specifically designed sampling circuits are adopted for the purpose of improving universality and robustness, which enables the proposed gate driver suitable for various applications, e.g. Si, SiC and GaN. The proposed gate driver has been fabricated in a $0.35 boldsymbol{mu} mathbf{m}$ BiCMOS technology with an active area of 0.836 mm2. Simulation and experimental results show precisely controlled dead-time, which is approximately zero, over variable load conditions and input voltages.","PeriodicalId":225029,"journal":{"name":"2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128072710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Magnetics in the GaN/SiC Power Electronics World 磁性在GaN/SiC电力电子领域
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2019-05-19 DOI: 10.1109/ISPSD.2019.8757684
A. Gerfer
{"title":"Magnetics in the GaN/SiC Power Electronics World","authors":"A. Gerfer","doi":"10.1109/ISPSD.2019.8757684","DOIUrl":"https://doi.org/10.1109/ISPSD.2019.8757684","url":null,"abstract":"The power electronics world made a big step in higher efficiency by introducing Gallium-Nitride (GaN) and Silicon-Carbide (SiC) electronic switches. The fast switching time and high voltage capabilities with low losses bring new opportunities for the optimization of magnetic components. For the majority of power electronics designers, the impression is that core material manufacturers are not innovative and the industry is making slow progress with the development of more efficient materials. The keynote and this paper will demonstrate that progress is indeed being made, as better materials become available while expanding on their limitations.","PeriodicalId":225029,"journal":{"name":"2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129385453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
175V, > 5.4 MV/cm, $50 mathrm{m}Omega.text{cm}^{2}$ at 250°C Diamond MOSFET and its reverse conduction 175V， > 5.4 MV/cm， $50 mathm {m}Omegatext{cm}^{2}$ 250°C下的金刚石MOSFET及其反向导通
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2019-05-19 DOI: 10.1109/ISPSD.2019.8757645
C. Masante, J. Pernot, J. Letellier, D. Eon, N. Rouger
{"title":"175V, > 5.4 MV/cm, $50 mathrm{m}Omega.text{cm}^{2}$ at 250°C Diamond MOSFET and its reverse conduction","authors":"C. Masante, J. Pernot, J. Letellier, D. Eon, N. Rouger","doi":"10.1109/ISPSD.2019.8757645","DOIUrl":"https://doi.org/10.1109/ISPSD.2019.8757645","url":null,"abstract":"A diamond MOSFET has been fabricated and characterized up to 250°C. The fabrication process has been improved in order to significantly reduce the specific on resistance, down to $50 mathbf{m}mathbf{Omega}.mathbf{cm}^{2}$, and the gate leakage current at high temperature. The maximum electrical field in diamond, at the breakdown value of 175V, is estimated to be higher than 5.4 MV/cm, with a boron doping of $2times 10^{17} mathbf{cm}^{-3}$.","PeriodicalId":225029,"journal":{"name":"2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128823334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
500°C SiC-based driver IC for SiC power MOSFETs 500°C SiC驱动IC，用于SiC功率mosfet
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2019-05-19 DOI: 10.1109/ISPSD.2019.8757618
Saleh Kargarrazi, H. Elahipanah, Zikang Tong, D. Senesky, C. Zetterling
{"title":"500°C SiC-based driver IC for SiC power MOSFETs","authors":"Saleh Kargarrazi, H. Elahipanah, Zikang Tong, D. Senesky, C. Zetterling","doi":"10.1109/ISPSD.2019.8757618","DOIUrl":"https://doi.org/10.1109/ISPSD.2019.8757618","url":null,"abstract":"This paper reports on a SiC BJT-based driver IC for driving SiC power MOSFETs operational from room temperature up to 500° C. The driver features design simplicity, smaller chip size, smaller propagation delay, and relatively high driving currents compared to similar SiC-based drivers. These properties are due to its fewer number of gain buffer stages and relatively higher transconductance of the BJTs as compared to SiC MOSFETs. The high-temperature operation of the driver, as well as the other advantages of the SiC BJT-based driver, suggest it as a viable candidate to be integrated with SiC MOSFETs in a power module.","PeriodicalId":225029,"journal":{"name":"2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123137313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
3300V Scaled IGBTs Driven by 5V Gate Voltage 5V栅极电压驱动的3300V缩放igbt
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2019-05-19 DOI: 10.1109/ISPSD.2019.8757626
T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, Y. Numasawa, K. Satoh, T. Matsudai, W. Saito, K. Kakushima, T. Hoshii, K. Furukawa, Masahiro Watanabe, N. Shigyo, H. Wakabayashi, K. Tsutsui, H. Iwai, A. Ogura, S. Nishizawa, I. Omura, H. Ohashi, T. Hiramoto
{"title":"3300V Scaled IGBTs Driven by 5V Gate Voltage","authors":"T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, Y. Numasawa, K. Satoh, T. Matsudai, W. Saito, K. Kakushima, T. Hoshii, K. Furukawa, Masahiro Watanabe, N. Shigyo, H. Wakabayashi, K. Tsutsui, H. Iwai, A. Ogura, S. Nishizawa, I. Omura, H. Ohashi, T. Hiramoto","doi":"10.1109/ISPSD.2019.8757626","DOIUrl":"https://doi.org/10.1109/ISPSD.2019.8757626","url":null,"abstract":"In this work, 5V gate drive 3300V IGBTs, designed based on a scaling principle, have been demonstrated. Turn-off characteristics without noticeable degradation in the gate voltage waveforms were confirmed. Turn-off tail current of the scaled devices significantly decreased than conventional 15V-driven devices. As a result of both $boldsymbol{V}mathbf{ce}$ and turn-off loss reduction, 35% improvement in $boldsymbol{E}mathbf{off}$ vs $boldsymbol{V}mathbf{cesat}$ relationship was achieved.","PeriodicalId":225029,"journal":{"name":"2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126364259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Foreseeable Industrial Changes of Automotive and Transportation Driven by Semiconductors 半导体驱动下的汽车和交通行业可预见的变化
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2019-05-19 DOI: 10.1109/ISPSD.2019.8757592
Tsuguo Nobe
{"title":"Foreseeable Industrial Changes of Automotive and Transportation Driven by Semiconductors","authors":"Tsuguo Nobe","doi":"10.1109/ISPSD.2019.8757592","DOIUrl":"https://doi.org/10.1109/ISPSD.2019.8757592","url":null,"abstract":"This manuscript discusses the changing roles of Semiconductors for the development of Autonomous Driving within the scope of Vehicle IoT and Deep Learning. Also the development of Autonomous Driving will change the outlook of transportation industries with shorter product life cycle and different modes of business profitability. Along with these changes of technologies and market, the semiconductor business model will also require changes.","PeriodicalId":225029,"journal":{"name":"2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133487956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Powering 5G Era Computing Platforms – the Road toward Integrated Power Delivery 助力5G时代计算平台——迈向一体化电力输送之路
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2019-05-19 DOI: 10.1109/ISPSD.2019.8757569
Peng Zou, Q. Xie, Wei Song, Q. Jiang, Yuliang Lu, Boning Huang
{"title":"Powering 5G Era Computing Platforms – the Road toward Integrated Power Delivery","authors":"Peng Zou, Q. Xie, Wei Song, Q. Jiang, Yuliang Lu, Boning Huang","doi":"10.1109/ISPSD.2019.8757569","DOIUrl":"https://doi.org/10.1109/ISPSD.2019.8757569","url":null,"abstract":"The projected core density in future processor chip creates pressing demand to improve computing energy efficiency. The challenge lies in delivering more accurate on-die supply voltage. The conventional discrete voltage regulator based power delivery becomes very inadequate. Breakthroughs in high frequency power stage design, integrated magnetic inductors, and silicon capacitors enables IVR based integrated power delivery architecture for future processor's energy efficiency need.","PeriodicalId":225029,"journal":{"name":"2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124372743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs p-GaN栅极AlGaN/GaN hemt的阈值电压不稳定机制
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2019-05-19 DOI: 10.1109/ISPSD.2019.8757667
A. Stockman, E. Canato, M. Meneghini, G. Meneghesso, P. Moens, B. Bakeroot
{"title":"Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs","authors":"A. Stockman, E. Canato, M. Meneghini, G. Meneghesso, P. Moens, B. Bakeroot","doi":"10.1109/ISPSD.2019.8757667","DOIUrl":"https://doi.org/10.1109/ISPSD.2019.8757667","url":null,"abstract":"In this study, we propose a technique to evaluate the transient threshold voltage behavior of p-GaN capped AlGaN/GaN high-electron-mobility transistors (HEMTs). The threshold voltage is monitored from $10 boldsymbol{mu}mathbf{s}$ to 100 s during positive gate bias stress. Technology computer-aided design (TCAD) simulations offer in-depth analysis of the different threshold voltage instability mechanisms: (i) electron trapping at the AlGaN/GaN interface, (ii) hole accumulation and trapping at the p-GaN/AlGaN interface and in the AlGaN barrier, respectively, and (iii) hole depletion of the p-GaN layer.","PeriodicalId":225029,"journal":{"name":"2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128223559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 34
Observation of self-recoverable gate degradation in p-GaN AlGaN/GaN HEMTs after long-term forward gate stress: The trapping & detrapping dynamics of hole/electron p-GaN、AlGaN/GaN HEMTs在长期正向栅极应力后自恢复栅极退化的观察:空穴/电子的俘获与脱陷动力学
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2019-05-19 DOI: 10.1109/ISPSD.2019.8757599
Yuanyuan Shi, Qi Zhou, Wei Xiong, Xi Liu, Xin Ming, Zhaoji Li, Wanjun Chen, Bo Zhang
{"title":"Observation of self-recoverable gate degradation in p-GaN AlGaN/GaN HEMTs after long-term forward gate stress: The trapping & detrapping dynamics of hole/electron","authors":"Yuanyuan Shi, Qi Zhou, Wei Xiong, Xi Liu, Xin Ming, Zhaoji Li, Wanjun Chen, Bo Zhang","doi":"10.1109/ISPSD.2019.8757599","DOIUrl":"https://doi.org/10.1109/ISPSD.2019.8757599","url":null,"abstract":"The gate reliability of normally off p-GaN gate AlGaN/GaN HEMTs and its underlying physical mechanism were investigated in a long-term recovery period after long-term forward gate stress. For the first time, a nondestructive gate degradation featuring a first degradation and then followed by a self-recovery dynamic was observed after a rigorous long-term (13–53 ks) forward gate stress. To elucidate the gate degradation kinetics, the static gate current, transfer characteristic and transient gate current were characterized before and after the gate stress as well as in the recovery intervals. During the stress, hole-injection together with trap-generation and hole-trapping concurred in AlGaN barrier is observed. Subsequently, electrons attracted by the trapped holes are persistently trapped in the AlGaN barrier, which leads to an electron energy barrier lowering and a continuing gate current increase in the recovery intervals. The hole-injection, hole-trapping, electron-trapping and hole/electron-detrapping take place in sequence during the stress and recovery process are reinforced by the inhomogeneous shift in VTH. The observed unique gate degradation dynamics and its underlying mechanism are of great value for p-GaN gate optimization to achieve improved gate reliability.","PeriodicalId":225029,"journal":{"name":"2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126471764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信
小红书