{"title":"Magnetics in the GaN/SiC Power Electronics World","authors":"A. Gerfer","doi":"10.1109/ISPSD.2019.8757684","DOIUrl":null,"url":null,"abstract":"The power electronics world made a big step in higher efficiency by introducing Gallium-Nitride (GaN) and Silicon-Carbide (SiC) electronic switches. The fast switching time and high voltage capabilities with low losses bring new opportunities for the optimization of magnetic components. For the majority of power electronics designers, the impression is that core material manufacturers are not innovative and the industry is making slow progress with the development of more efficient materials. The keynote and this paper will demonstrate that progress is indeed being made, as better materials become available while expanding on their limitations.","PeriodicalId":225029,"journal":{"name":"2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2019.8757684","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The power electronics world made a big step in higher efficiency by introducing Gallium-Nitride (GaN) and Silicon-Carbide (SiC) electronic switches. The fast switching time and high voltage capabilities with low losses bring new opportunities for the optimization of magnetic components. For the majority of power electronics designers, the impression is that core material manufacturers are not innovative and the industry is making slow progress with the development of more efficient materials. The keynote and this paper will demonstrate that progress is indeed being made, as better materials become available while expanding on their limitations.