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Integrated RF transformer and power combiner design in 150nm CMOS process 150nm CMOS工艺集成射频变压器和功率合成器设计
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997780
E. Lourandakis, Konstantinos Karouzakis, P. Papadopoulos, J. Chicharro, R. Weigel
{"title":"Integrated RF transformer and power combiner design in 150nm CMOS process","authors":"E. Lourandakis, Konstantinos Karouzakis, P. Papadopoulos, J. Chicharro, R. Weigel","doi":"10.1109/EUMIC.2014.6997780","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997780","url":null,"abstract":"An integrated passive power combiner is discussed and characterized based on test structure fabricated in a 150 nm LFoundry CMOS process. The power combiner uses differentially driven coupled transformers as a basic building block. We discuss first the constraint driven sythesis of the transformer itself and the device modeling with a rapid RLCk model extractor. Helic's electronic design automation (EDA) tools are used for both, synthesis and extraction of the passive devices. The accuracy of the extracted transformer model is proven by comparison to an EM tool. The fabricated power combiner structure is finally extracted with the same EDA toolset and compared to measured data from on-wafer experiments. Good agreement is achieved in all cases proving the accuracy of the proposed synthesis and extraction methodology for complex RF IC designs.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115224241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
GaN-HEMT nonlinear modeling of single-ended and Doherty high-power amplifiers 单端和Doherty大功率放大器的GaN-HEMT非线性建模
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997870
R. Hajji, M. Poulton, D. B. Crittenden, Jeff Gengler, P. Xia
{"title":"GaN-HEMT nonlinear modeling of single-ended and Doherty high-power amplifiers","authors":"R. Hajji, M. Poulton, D. B. Crittenden, Jeff Gengler, P. Xia","doi":"10.1109/EUMIC.2014.6997870","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997870","url":null,"abstract":"A large-signal model for 120W high power packaged pre-matched transistor utilizing TriQuint's TQGaN25HV HEMT technology is presented. It is composed of an array of unit-cell nonlinear EEHEMT models representing the high power GaN transistor die and EM based models for the input/output pre-matching circuits relaying the transistor die pads to the package leads. This model offers accurate small-signal and large-signal performance prediction at the package leads reference plane, as well as, when used in 50Ω matched evaluation boards of 120W single-ended and 240W Doherty PA's. The model is validated in S-band against measured data, offering good prediction of Doherty PA key parameters, backoff efficiency and saturated peak power.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"216 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115698746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
2D numerical simulation for InGaP/GaAs HBT safe operating area InGaP/GaAs HBT安全操作区域的二维数值模拟
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997776
Bo-Rong Lin, Nick G. M. Tao, Chien-Ping Lee, T. Henderson, B. Lin
{"title":"2D numerical simulation for InGaP/GaAs HBT safe operating area","authors":"Bo-Rong Lin, Nick G. M. Tao, Chien-Ping Lee, T. Henderson, B. Lin","doi":"10.1109/EUMIC.2014.6997776","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997776","url":null,"abstract":"The safe operating area (SOA) of InGaP/GaAs heterojunction bipolar transistors (HBT) has been studied using two-dimensional (2D) Technology Computer-Aided Design (TCAD) tool. The hydrodynamic transport based impact ionization and self-heating models were implemented. The DC simulation result shows two distinct SOA boundary regimes corresponding to different dominant mechanisms, which is in good agreement with analytical modeling and experimental results. The simulation not only gives us insight to the detailed failure mechanisms but also provides guidance for the design of devices with better ruggedness and improved SOA performances.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"153 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131299442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An L-band SiGe BiCMOS core chip MMIC for transmit/receive modules 用于发送/接收模块的l波段SiGe BiCMOS核心芯片MMIC
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997794
T. Hagiwara, S. Shinjo, M. Kagano, E. Taniguchi
{"title":"An L-band SiGe BiCMOS core chip MMIC for transmit/receive modules","authors":"T. Hagiwara, S. Shinjo, M. Kagano, E. Taniguchi","doi":"10.1109/EUMIC.2014.6997794","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997794","url":null,"abstract":"In this paper, an L-band transmitter and receiver MMIC, which is known as a core chip for phased array communication and radar applications is presented. The MMIC is fabricated in 0.18 μm SiGe-BiCMOS process, comprises an RX amplifier, a 5-bit active phase shifter, SPDT switches, and a TX amplifier. The RX amplifier realized low noise and high linearity with dual bias-feed techniques. The measurement results show, in receive mode, a gain of 25.5 dB, a noise figure of 1.9 dB, and an input P1dB of -16 dBm in L-band. The MMIC is capable of providing 32 phase states from 0° to 360°, with an RMS phase error of lower than 2.3° and an RMS gain error of lower than 0.5 dB. In transmit mode, the gain of 32 dB, and the saturated output power of 15 dBm are achieved.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127223953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Numerical evaluation of cable noise parameters under cryogenic thermal gradients 低温温度梯度下电缆噪声参数的数值评价
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997825
S. Colangeli, R. Cleriti, D. Palombini, E. Limiti
{"title":"Numerical evaluation of cable noise parameters under cryogenic thermal gradients","authors":"S. Colangeli, R. Cleriti, D. Palombini, E. Limiti","doi":"10.1109/EUMIC.2014.6997825","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997825","url":null,"abstract":"This contribution presents a very flexible tool for numerically evaluating the noise parameters of a transmission line subject to an arbitrary thermal gradient. Contrary to previous methods, the proposed approach allows straightforwardly to take into account possible variations of electrical parameters along the propagation direction, such as may be expected when temperature ranges between very different values. The main application of the proposed method is cable modeling in noise-figure measurement setups under cryogenic operation: in such circumstances, indeed, the coaxial cables (or waveguide) at the interface between the outside and the inside of the cryogenic chamber are subject to remarkable temperature excursions. As a consequence, significant de-embedding errors may arise if the cables are not correctly modeled, given the very low values of noise figure which are commonly exhibited by in cryo-cooled active devices.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125417909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Characterization and simulation of traps in InGaP/GaAs HBT by GR noise analysis 基于GR噪声分析的InGaP/GaAs HBT陷阱表征与模拟
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997777
A. Al Hajjar, J. Nallatamby, M. Prigent, J. Jacquet
{"title":"Characterization and simulation of traps in InGaP/GaAs HBT by GR noise analysis","authors":"A. Al Hajjar, J. Nallatamby, M. Prigent, J. Jacquet","doi":"10.1109/EUMIC.2014.6997777","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997777","url":null,"abstract":"This paper has two main axis: first, the low frequency noise characteristics of InGaP/GaAs HBT are investigated for the 100 Hz to 10 MHz frequency range and the temperature range of 300°K to 375°K at low as well as high injection levels. Low frequency generation recombination noise measurements revealed an electron trap with activation energy of 0.536eV. Then, from a rigorous physics-based noise simulation using the Langevin approach within the framework of Green's function, traps detected by temperature-dependent experimental observation is located at the heterointerface δ-InGaP/GaAs, responsible for the GR noise sources. The simulated results are in good agreement with experimental data.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128631235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Blind detection of cyclostacionary signals taking advantage of cyclic spectrum leakage 利用循环频谱泄漏对周期稳态信号进行盲检测
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997912
D. Malafaia, José M. N. Vieira, A. Tomé
{"title":"Blind detection of cyclostacionary signals taking advantage of cyclic spectrum leakage","authors":"D. Malafaia, José M. N. Vieira, A. Tomé","doi":"10.1109/EUMIC.2014.6997912","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997912","url":null,"abstract":"In this article we describe a novel process for blind detection in spectrum sensing taking advantage of the cyclostationary features of any digital modulation that uses a finite number of distinct signals to represent digital data. Traditional models only look at any peak in a cyclic spectrum that satisfies a given threshold, in this method we take advantage of the cyclic spectrum leakage to identify a signal. This method shows better performance at detecting low SNR signals than the traditional cyclostationary signal detection.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121036062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A 5GHz/60GHz receiver front-end IC in 90nm CMOS technology 采用90nm CMOS技术的5GHz/60GHz接收机前端集成电路
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997781
R. Inagaki, T. Tanaka, M. Tsuru, E. Taniguchi, H. Fukumoto, S. Kameda, N. Suematsu, A. Taira, T. Takagi, K. Tsubouchi
{"title":"A 5GHz/60GHz receiver front-end IC in 90nm CMOS technology","authors":"R. Inagaki, T. Tanaka, M. Tsuru, E. Taniguchi, H. Fukumoto, S. Kameda, N. Suematsu, A. Taira, T. Takagi, K. Tsubouchi","doi":"10.1109/EUMIC.2014.6997781","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997781","url":null,"abstract":"This paper presents a multi-band receiver front-end IC in 90nm CMOS technology. The receiver front-end IC is switchable between a 5GHz front-end and a 60GHz front-end. The architecture of the receiver front-end IC is a direct conversion in 5GHz band and a superheterodyne in 60GHz band. For the miniaturization, the 5GHz and 60GHz front-ends share a variable gain amplifier for adjustment of power level and a quadrature mixer for frequency conversion. The multi-band (5GHz/60GHz) receiver front-end IC achieved conversion gain of 32dB with noise figure (NF) of 5dB at 5GHz band and conversion gain of 32dB with NF of 8dB at 60GHz band.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117087378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A low-complexity memoryless model for envelope tracking RF power amplifiers 包络跟踪射频功率放大器的低复杂度无记忆模型
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997900
G. Montoro, P. Gilabert, J. A. Garcia, M. Ruiz, R. Marante
{"title":"A low-complexity memoryless model for envelope tracking RF power amplifiers","authors":"G. Montoro, P. Gilabert, J. A. Garcia, M. Ruiz, R. Marante","doi":"10.1109/EUMIC.2014.6997900","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997900","url":null,"abstract":"This paper presents a new kind of behavioral model structure for characterizing static nonlinearities in dynamically supplied RF power amplifiers. The proposed architecture is based on the combination of several basic cells and it is focused to simplify the real-time design and implementation of adaptive shaping functions devoted to improve the efficiency in systems controlled by digital signal processors with tight computational capabilities, such is the case of handsets and small-cells.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126968955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reconfigurable WLAN Notch for UWB filters 用于UWB滤波器的可重构WLAN陷波
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMC.2014.6986742
W. Ahmad, D. Budimir
{"title":"Reconfigurable WLAN Notch for UWB filters","authors":"W. Ahmad, D. Budimir","doi":"10.1109/EUMC.2014.6986742","DOIUrl":"https://doi.org/10.1109/EUMC.2014.6986742","url":null,"abstract":"This paper presents the design and results of an ultra-wideband (3.1-10.6 GHz) filter with a reconfigurable WLAN notch at 5.8 GHz. Reconfigurability has been achieved by the implementation of Graphene based switching elements. The switches are in OFF state when Graphene is unbiased at a chemical potential of μc = 0.0eV and are in ON state when Graphene is biased at a chemical potential of μc = 1.0eV. The simulation and measurement results of the filter when the Graphene switches are OFF show an entire bandpass response from 3.1 GHz to 10.6 GHz and with low insertion loss. When the Graphene switches are ON, the simulation result shows that a sharp rejection of the WLAN band at 5.8 GHz is achieved, with a very low passband insertion loss. The obtained results of both states, i.e. switches OFF and switches ON, are as desired. An additional filter, implemented with PIN diodes as the switching elements, is also designed and measured. Upon comparison, the obtained results of PIN diodes in OFF and ON states match those of the Graphene switches in OFF and ON states.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134301496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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