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Design of a switched injection-locked oscillator at 2.45 GHz for a local positioning system 用于局部定位系统的2.45 GHz开关注入锁定振荡器的设计
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997805
M. Schulz, A. Strobel, N. Joram, F. Ellinger
{"title":"Design of a switched injection-locked oscillator at 2.45 GHz for a local positioning system","authors":"M. Schulz, A. Strobel, N. Joram, F. Ellinger","doi":"10.1109/EUMIC.2014.6997805","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997805","url":null,"abstract":"In this paper, a fully integrated active reflector transponder for the localization and quick evacuation of passengers in the sea in case that passengers are overboard is presented. The backscatter tag is based on a cross-coupled oscillator topology using the switched injection-locked oscillator (SILO) principle and is implemented in a frequency modulated continuous wave (FMCW) radar. Furthermore, a novel theory for calculating the input referred noise power of a SILO is applied. The presented backscatter tag operates at 2.45 GHz and reaches a steady-state output power of 7.5 dBm. The measured input referred noise power of the SILO reaches a remarkable value of -80 dBm.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131136298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A 1.9 GHz low phase noise complementary cross-coupled FBAR-VCO in 0.18 μm CMOS technology 基于0.18 μm CMOS技术的1.9 GHz低相位噪声互补交叉耦合FBAR-VCO
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997840
Guoqiang Zhang, A. Anand, Keiichiro Kamada, S. Amalina, H. Kanaya, R. Pokharel, K. Hikichi, Shuji Tanaka, M. Esashi, K. Hashimoto, S. Taniguchi
{"title":"A 1.9 GHz low phase noise complementary cross-coupled FBAR-VCO in 0.18 μm CMOS technology","authors":"Guoqiang Zhang, A. Anand, Keiichiro Kamada, S. Amalina, H. Kanaya, R. Pokharel, K. Hikichi, Shuji Tanaka, M. Esashi, K. Hashimoto, S. Taniguchi","doi":"10.1109/EUMIC.2014.6997840","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997840","url":null,"abstract":"A 1.9 GHz film bulk acoustic resonator (FBAR) based complementary cross-coupled voltage-controlled oscillator (VCO) designed in 0.18 μm CMOS is presented. DC latch and low frequency instability problems have been solved by the cross-coupled pairs with DC block capacitors. The open loop gain has been analyzed and optimized by considering the effect of transistors' size on enhancement of the stability at low frequencies and the loop gain at the desired oscillation frequency. The optimization of the phase noise has been done by considering the effect of PMOS transistors' size on the quality (Q-) factor and the impedance of FBAR. The final fabricated chip is packaged in dual in-line package (DIP) and the measured performance shows that the proposed FBAR-VCO achieves a phase noise of -148 dBc/Hz at 1 MHz offset with a figure of merit (FOM) of -212 dBc/Hz.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115527344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Observation of multiple conduction paths in boron δ-doped diamond structures 硼掺杂金刚石结构中多条传导路径的观察
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997811
N. Tumilty, A. Pakpour-Tabrizi, R. Jackman, R. Lang
{"title":"Observation of multiple conduction paths in boron δ-doped diamond structures","authors":"N. Tumilty, A. Pakpour-Tabrizi, R. Jackman, R. Lang","doi":"10.1109/EUMIC.2014.6997811","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997811","url":null,"abstract":"Impedance spectroscopy has been used to investigate the conductivity displayed by diamond doped with boron in an intrinsic-delta doped-intrinsic multilayer system. For a 5nm thick delta layer, it is possible to observe three conduction pathways, which can be individually assigned to transport within the delta layer, and to two differing conduction paths in the i-layers adjoining the delta layer. For transport in the i-layers, thermal trapping and de-trapping processes can be observed, and only at the highest temperature investigated here (673K) can carrier transport due to a single conduction process be seen. Impedance spectroscopy is therefore an ideal nondestructive tool for investigating the electrical characteristics of complex diamond structures.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122111932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 220 to 320 GHz broadband active frequency multiplier-by-eight MMIC 一个220至320 GHz宽带有源频率乘8 MMIC
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997809
U. Lewark, A. Tessmann, S. Wagner, A. Leuther, T. Zwick, I. Kallfass
{"title":"A 220 to 320 GHz broadband active frequency multiplier-by-eight MMIC","authors":"U. Lewark, A. Tessmann, S. Wagner, A. Leuther, T. Zwick, I. Kallfass","doi":"10.1109/EUMIC.2014.6997809","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997809","url":null,"abstract":"For broadband signal generation in the high millimeter-wave range we present a frequency multiplier-by-eight MMIC. The measured output tuning bandwidth from 220 to 320 GHz almost covers the entire WR-03 waveguide band (220-325 GHz). On chip interstage and post amplification result in a maximum output power of 2.5 dBm at an output frequency of 260 GHz. Due to the high multiplication factor in-band harmonics are measured with a frequency-selective method and verify the dominant presence of the wanted eighth harmonic. The MMIC is realized in a metamorphic high electron mobility transistor (mHEMT) technology with a gate length of 35nm.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132858504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
4W X-band high efficiency MMIC PA with output harmonic injection 4W x波段高效MMIC PA，输出谐波注入
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997874
A. Dani, Mike Coffey, Z. Popovié
{"title":"4W X-band high efficiency MMIC PA with output harmonic injection","authors":"A. Dani, Mike Coffey, Z. Popovié","doi":"10.1109/EUMIC.2014.6997874","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997874","url":null,"abstract":"This paper demonstrates a MMIC GaN X-band PA designed to have improved efficiency by second harmonic power injection at the output that helps shape the time-domain waveforms across the drain. The MMIC contains a class-AB PA with a nominal 4-W (36 dBm) output power at 10GHz and a small-signal gain of 14dB. The best results with harmonic injection were measured at 10.6 GHz with 3.5W (35.44 dBm) of output, showing an increase in drain efficiency from 48.5% without injection to 70% when 26.2 dBm was injected at 21.2 GHz. In order to maximize the total efficiency, which includes the efficiency of the injection circuit, a second harmonic efficient amplifier is integrated in the same GaN MMIC. The 20-GHz PA needs to provide a power on the order of Pout - 10dB, and is measured to output 27dBm with 8dB gain and PAE=59%. The relationship between the total efficiency and injector efficiency is derived and shows that the total efficiency is not appreciably affected by the injector efficiency if a second-harmonic amplifier with a gain greater than 6-7dB and with a PAE > 40% is employed.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133305695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Influence of parasitic effects of the “3ω” measurement setup to improve the determination of GaN HEMTs thermal impedance 寄生效应对“3ω”测量装置对GaN hemt热阻抗测定的影响
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997778
A. Mustafa, S. Raphael, Q. Raymond
{"title":"Influence of parasitic effects of the “3ω” measurement setup to improve the determination of GaN HEMTs thermal impedance","authors":"A. Mustafa, S. Raphael, Q. Raymond","doi":"10.1109/EUMIC.2014.6997778","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997778","url":null,"abstract":"The thermal impedance of Gallium Nitride based High Electron Mobility Transistors (GaN HEMTs) has been characterized using the “3ω method”. We already demonstrated in a previous work that, subject to certain conditions, the voltage oscillation at the third harmonic is the real image of the thermal impedance of the device. In this work, we propose both a theoretical approach to understand the limitation of the 3ω test bench and a comparison with measurements especially when power HEMTs are used as the resistance to be measured.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121993265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A high linearity amplifier using an optimized transconductance process 一种采用优化跨导工艺的高线性放大器
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997842
Alan Noll, D. Pal
{"title":"A high linearity amplifier using an optimized transconductance process","authors":"Alan Noll, D. Pal","doi":"10.1109/EUMIC.2014.6997842","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997842","url":null,"abstract":"High linearity, high gain and wide frequency bandwidth are key parameters for amplifiers used for broadband systems where distortion levels define the architecture of the network. Amplifiers with high output third order intercept points require a flat transconductance curve versus the gate voltage. The surface states between the GaAs and the nitride passivation layer and the material etching in the ungated area reduce the flatness of the transconductance curve. High gate leakage current of the devices can also degrade the transconductance. However the transconductance needs to remain constant in the operating range of the gate bias to achieve low third order intermodulation distortion. In this investigation an amplifier was designed and manufactured to validate the optimization of the process to obtain flat transconductance curves. The amplifier third order intercept point improved 7 dB typically when using the optimized process. The amplifier exhibited 20 dB of gain, 4.5 dB noise figure, and +45 dBm output third order intercept point across 50 MHz to 1000 MHz.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115638056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
V-band pHEMT dual-conversion down-converter with Schottky diode RF mixer and analog Gilbert IF mixer 带肖特基二极管射频混频器和模拟吉尔伯特中频混频器的v波段pHEMT双变换下变频器
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997807
Wei-Ling Chang, C. Meng, Chih-Kai Chang, G. Huang
{"title":"V-band pHEMT dual-conversion down-converter with Schottky diode RF mixer and analog Gilbert IF mixer","authors":"Wei-Ling Chang, C. Meng, Chih-Kai Chang, G. Huang","doi":"10.1109/EUMIC.2014.6997807","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997807","url":null,"abstract":"A V-band dual-conversion down-converter with the Schottky-diode first conversion mixer and the analog Gilbert second conversion mixer is demonstrated using 0.15-μm pseudomorphic high electron mobility transistor (pHEMT) technology. The diode mixer based on quarter-wavelength design methodology occupies a reasonable real estate at millimeter-wave frequency while the analog IF mixer has the size advantage at low microwave frequency. A trifilar transformer is employed in the first mixer to have balanced RF/LO/IF signals for the anti-parallel diode-pairs while a Marchand balance converts the RF signal into the balanced one. Analog I/Q Gilbert mixers driven by the poly-phase filter in the LO port achieve precise I/Q IF output. As a result, this work achieves a wideband conversion gain around -1 dB from 54-64 GHz, -5 dBm of IP1dB, and 6 dBm of IIP3.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126368857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
On the correlation between kink effect and effective mobility in InAlN/GaN HEMTs InAlN/GaN hemt中扭结效应与有效迁移率的相关性研究
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997798
P. Altuntas, N. Defrance, M. Lesecq, A. Agboton, R. Ouhachi, E. Okada, C. Gaquière, J. De Jaeger, É. Frayssinet, Y. Cordier
{"title":"On the correlation between kink effect and effective mobility in InAlN/GaN HEMTs","authors":"P. Altuntas, N. Defrance, M. Lesecq, A. Agboton, R. Ouhachi, E. Okada, C. Gaquière, J. De Jaeger, É. Frayssinet, Y. Cordier","doi":"10.1109/EUMIC.2014.6997798","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997798","url":null,"abstract":"This paper reports on the kink effect observed in InAlN/GaN high electron mobility transistors. Electrical characterizations were carried out to point out the influence of this phenomenon on transistor behaviour. It is demonstrated that the kink effect is directly correlated to shallow traps located under the conduction band. A model is proposed to highlight the influence of scattering effects on the effective mobility, permitting to describe accurately the locus of the so-called kink voltage for a gate bias close to the pinch-off voltage.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130922050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
High power K-band GaN on SiC CPW monolithic power amplifier 高功率k波段GaN on SiC CPW单片功率放大器
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997915
O. Cengiz, O. Sen, E. Ozbay
{"title":"High power K-band GaN on SiC CPW monolithic power amplifier","authors":"O. Cengiz, O. Sen, E. Ozbay","doi":"10.1109/EUMIC.2014.6997915","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997915","url":null,"abstract":"This paper presents a high power amplifier at K-band (20.2-21.2 GHz). The AlGaN/GaN CPW MMIC amplifier is realized with 0.25 μm HEMT process on 2-inch semi-insulating SiC substrate. The amplifier has a small signal gain over 20 dB for Vds=15V and measured output power of over 31 dBm at 20.2 Ghz. PAE of the amplifier is around 22% for desired frequency band. Initial radiation hardness tests indicate a suitable stability of the technology in space.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132370369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
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