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2014 9th European Microwave Integrated Circuit Conference最新文献

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6–12 GHz double-balanced image-reject mixer MMIC in 0.25μm AlGaN/GaN technology 采用0.25μm AlGaN/GaN技术的6-12 GHz双平衡图像抑制混频器MMIC
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2015-03-30 DOI: 10.1017/S1759078715000471
M. van Heijningen, J. Hoogland, A. P. de Hek, F. V. van Vliet
{"title":"6–12 GHz double-balanced image-reject mixer MMIC in 0.25μm AlGaN/GaN technology","authors":"M. van Heijningen, J. Hoogland, A. P. de Hek, F. V. van Vliet","doi":"10.1017/S1759078715000471","DOIUrl":"https://doi.org/10.1017/S1759078715000471","url":null,"abstract":"The front-end circuitry of transceiver modules is slowly being updated from GaAs-based MMICs to GalliumNitride. Especially GaN power amplifiers and TR switches, but also low-noise amplifiers, offer significant performance improvement over GaAs components. Therefore it is interesting to also explore the possible advantages of a GaN mixer to complete a fully GaN-based front-end. In this paper the design-experiment and measurement results of a double-balanced image-reject mixer MMIC in 0.25 μm AlGaN/GaN technology are presented. This design features an integrated LO amplifier and active IF balun. The measured conversion loss is less than 8 dB from 6 to 12 GHz, at 0 dBm LO power.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126603037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Design and measurement of 500-MS/s ΣΔ modulator with half-delayed return-to-zero feedback DAC 带有半延迟归零反馈DAC的500 ms /s ΣΔ调制器的设计与测量
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997845
Young‐Kyun Cho, J. Jung, Kwangchun Lee
{"title":"Design and measurement of 500-MS/s ΣΔ modulator with half-delayed return-to-zero feedback DAC","authors":"Young‐Kyun Cho, J. Jung, Kwangchun Lee","doi":"10.1109/EUMIC.2014.6997845","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997845","url":null,"abstract":"A second-order continuous-time (CT) low-pass ΣΔ modulator using a single feedback digital-to-analog converter (DAC) is presented. To reduce the feedback DACs by one, we introduce half-delayed return-to-zero (HRZ) feedback signaling and feed-forward topology. The HRZ feedback scheme reduces power consumption and die area by removing a summing amplifier and DAC for the excess-loop delay compensation and the feed-forward topology saves additional power and area by replacing the feedback DAC with feed-forward path. The concept is implemented in a 500 MS/s CT ΣΔ modulator for 12-MHz signal bandwidth in a 130 nm CMOS process which occupies 0.19 mm2. The Measurements show that the modulator achieves spurious free dynamic range of 61.2 dB, signal-to-noise and distortion ratio of 52.5 dB, and dynamic range of 55 dB. The modulator consumes 9.96 mW at a 1.2 V supply.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122483335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A full-360° vector-sum phase shifter with low RMS phase and gain errors for 60 GHz 5-bit application 全360°矢量和移相器，具有低RMS相位和增益误差，适用于60ghz 5位应用
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997853
Yu Ye, Ling-Yun Li, R. Tong, Xiaowei Sun
{"title":"A full-360° vector-sum phase shifter with low RMS phase and gain errors for 60 GHz 5-bit application","authors":"Yu Ye, Ling-Yun Li, R. Tong, Xiaowei Sun","doi":"10.1109/EUMIC.2014.6997853","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997853","url":null,"abstract":"A 60 GHz vector-sum phase shifter with a continuous full-360° phase-shifting range is proposed. The employed I/Q network is optimized to fit the varied load impedance of the different states of the adder. A measured low root-mean-square (rms) phase error and rms gain error of less than 2.5° and 1 dB are observed from 56 to 64 GHz, respectively, to offer a phase resolution of 5-bit or better. The phase shifter achieves an average gain of 5 dB and gain flatness of ±1.5 dB. The chip draws 50 mA from 2.5 V supply with a saturated output power of 5 dBm.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129822537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
ESA perspective on the industrialisation of European GaN technology for space application 欧空局对欧洲氮化镓空间应用技术工业化的看法
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997835
A. Barnes, F. Vitobello
{"title":"ESA perspective on the industrialisation of European GaN technology for space application","authors":"A. Barnes, F. Vitobello","doi":"10.1109/EUMIC.2014.6997835","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997835","url":null,"abstract":"This paper reports on the component reliability improvement activities undertaken as part of the European Space Agency (ESA) GREAT2 project, culminating in the first in-orbit demonstration of an X-band telemetry transmitter using European sourced GaN technology.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126428430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
A 1.16 pJ/bit 80 Gb/s 211−1 PRBS generator in SiGe bipolar technology 基于SiGe双极技术的1.16 pJ/bit 80gb /s 211−1 PRBS发生器
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997846
A. Gharib, A. Talai, R. Weigel, D. Kissinger
{"title":"A 1.16 pJ/bit 80 Gb/s 211−1 PRBS generator in SiGe bipolar technology","authors":"A. Gharib, A. Talai, R. Weigel, D. Kissinger","doi":"10.1109/EUMIC.2014.6997846","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997846","url":null,"abstract":"A 211-1, 80Gb/s pseudo-random bit sequence (PRBS) generator, employing parallel architecture is presented. The generator is optimized to provide a high bit rate as well as a long sequence length without any need of inductive peaking for a lower power consumption, compared to PRBS generators reported in literature. The PRBS generator consists of two parallel complementary rows of linear feedback shift registers (LFSR), operating up to 40Gb/s, where the generated PRBS from each are multiplexed to provide a bit-rate of double the clock frequency, reaching up to 80Gb/s. The clock distribution network was carefully optimized for a reduced amplitude and phase error to push the boundaries of the maximum achievable bit-rate. The PRBS generator is capable of generating bit-rates ranging from 10Gb/s up to 80Gb/s, with a power consumption of 576 mW to 1 W. The circuit is manufactured in an 0.35 μm SiGe-Bipolar technology with an ft of 200 GHz.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128061620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Ferrite LTCC edge-guided circulator 铁氧体LTCC边导环行器
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997927
Shicheng Yang, D. Vincent, J. Bray, L. Roy
{"title":"Ferrite LTCC edge-guided circulator","authors":"Shicheng Yang, D. Vincent, J. Bray, L. Roy","doi":"10.1109/EUMIC.2014.6997927","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997927","url":null,"abstract":"This paper describes a ferrite low temperature co-fired ceramic (LTCC) edge-guided circulator. Traditional Y-junction stripline circulator has one ferrite disk surrounded by a dielectric material. A design of circulator presented here uses only ferrite LTCC. The material exposed under the magnetic bias shows its ferrite properties and the rest shows the dielectric properties. It has been demonstrated that a passive ferrite component like circulator could be realized on ferrite LTCC substrate without adding other materials. So this circulator could be integrated with other RF components such as antennas, amplifiers and filters etc in System-on-Package (SoP).","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134107051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
GaN HEMT model extraction based on dynamic-bias measurements 基于动态偏置测量的GaN HEMT模型提取
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997828
V. Vadalà, A. Raffo, G. Vannini, G. Avolio, D. Schreurs
{"title":"GaN HEMT model extraction based on dynamic-bias measurements","authors":"V. Vadalà, A. Raffo, G. Vannini, G. Avolio, D. Schreurs","doi":"10.1109/EUMIC.2014.6997828","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997828","url":null,"abstract":"In this paper a recently proposed identification procedure based on exciting the device under test simultaneously with low-frequency (LF) large-signal excitations and a high-frequency tickle tone, is applied for the first time to GaN transistors. It will be demonstrated that the proposed technique allows reaching good prediction capability even when challenging GaN technologies are considered where LF dispersion strongly affects the transistor behavior. A dedicated formulation for the drain-source current generator is used to correctly account for dispersive phenomena. As a case study a 0.25-μm GaN HEMT is considered. The extracted model has been validated through comparison with vector nonlinear measurements carried out at 10 GHz.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127566828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Analysis and modeling of skin and proximity effects for millimeter-wave inductors design in nanoscale Si CMOS 纳米级硅CMOS毫米波电感设计中的趋肤效应和接近效应分析与建模
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997779
R. Chan, Jyh-Chyurn Guo
{"title":"Analysis and modeling of skin and proximity effects for millimeter-wave inductors design in nanoscale Si CMOS","authors":"R. Chan, Jyh-Chyurn Guo","doi":"10.1109/EUMIC.2014.6997779","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997779","url":null,"abstract":"Analytical models of skin effect and proximity effect were developed in this paper to calculate and predict the frequency dependent resistance, Re(Z<sub>in</sub>) and Q for mm-wave inductor design. The derived models incorporate layout and material parameters, and frequency in an explicit form suitable for circuit simulation. The accuracy has been proven by a close match with Re(Z<sub>in</sub>) and Q measured from mm-wave inductor (L<sub>dc</sub>~150pH, Q<sub>max</sub> ~17, f<sub>SR</sub>>>65GHz) fabricated by 65nm CMOS process with 0.9μm standard top metal.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131029705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Structural field plate length optimization for high power applications 大功率应用结构场板长度优化
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997843
A. Toprak, G. Kurt, O. Sen, E. Ozbay
{"title":"Structural field plate length optimization for high power applications","authors":"A. Toprak, G. Kurt, O. Sen, E. Ozbay","doi":"10.1109/EUMIC.2014.6997843","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997843","url":null,"abstract":"In this work, we report GaN high-electron-mobility-transistors (HEMTs) on SiC with field plates of various dimensions for optimum performance. 0.6 μm gate length, 3 μm drain source space AlGaN/GaN HEMTs with field-plate lengths of 0.2, 0.3, 0.5 and 0.7 μm have been fabricated. Great enhancement in radio frequency (RF) output power density was achieved with acceptable compromise in small signal gain. When biased at 35 V, at 3 dB gain compression, a continuous wave output power density of 5.2 W/mm, power-added efficiency (PAE) of 33% and small gain of 11.4 dB were obtained at 8 GHz using device with 0.5 μm field plate length and 800 μm gate width without using via hole technology.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130773983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
GH25-10: New qualified power GaN HEMT process from technology to product overview GH25-10:从技术到产品概述的新型合格功率GaN HEMT工艺
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997833
D. Floriot, V. Brunel, M. Camiade, C. Chang, B. Lambert, Z. Ouarch-Provost, H. Blanck, J. Grunenputt, M. Hosch, H. Jung, J. Splettstober, U. Meiners
{"title":"GH25-10: New qualified power GaN HEMT process from technology to product overview","authors":"D. Floriot, V. Brunel, M. Camiade, C. Chang, B. Lambert, Z. Ouarch-Provost, H. Blanck, J. Grunenputt, M. Hosch, H. Jung, J. Splettstober, U. Meiners","doi":"10.1109/EUMIC.2014.6997833","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997833","url":null,"abstract":"The performances and the results of the qualification plan of the new high power GaN HEMT process GH25-10 are summarized in this paper. This technology would be the first ¼ gate length process qualified in Europe on 4” SiC substrate and will be fully open in foundry mode mid of 2014. It addresses applications up to 20 GHz with state of the art figure of merits in term of power density, gain, efficiency and reliability. The first part is dedicated to the description of the process and the associated spread data analysis. A second part is focused on the review of the performances, the electrical domain of validity (operating ratings) and modeling capabilities. This view is completed by some results of the qualification process. Finally, the last part will be focused on the product development based on the GH25-10 GaN technology.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114584162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 31
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