GH25-10: New qualified power GaN HEMT process from technology to product overview

Abstract

The performances and the results of the qualification plan of the new high power GaN HEMT process GH25-10 are summarized in this paper. This technology would be the first ¼ gate length process qualified in Europe on 4” SiC substrate and will be fully open in foundry mode mid of 2014. It addresses applications up to 20 GHz with state of the art figure of merits in term of power density, gain, efficiency and reliability. The first part is dedicated to the description of the process and the associated spread data analysis. A second part is focused on the review of the performances, the electrical domain of validity (operating ratings) and modeling capabilities. This view is completed by some results of the qualification process. Finally, the last part will be focused on the product development based on the GH25-10 GaN technology.