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A 233-GHz low noise amplifier with 22.5dB gain in 0.13μm SiGe 在0.13μm SiGe下具有22.5dB增益的233 ghz低噪声放大器
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997824
S. Malz, B. Heinemann, U. Pfeiffer
{"title":"A 233-GHz low noise amplifier with 22.5dB gain in 0.13μm SiGe","authors":"S. Malz, B. Heinemann, U. Pfeiffer","doi":"10.1109/EUMIC.2014.6997824","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997824","url":null,"abstract":"A low noise amplifier (LNA) design for 230GHz applications in an advanced SiGe heterojunction bipolar transistor technology is presented. The circuit consists of a four-stage pseudo-differential cascode topology. It was implemented in a commercially available SiGe BiCMOS technology with fT/fmax of 300/450GHz. By employing positive feedback for unilateralization the small-signal gain is increased, enabling circuit operation in high frequency bands and improved efficiency. The amplifier has measured 22.5dB gain at 233GHz with a 3dB bandwidth of 10GHz and a simulated noise figure of 12.5dB. The low noise amplifier draws only 17mA from a 4V supply.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116861346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
A 17.5-dBm D-band power amplifier and doubler chain in SiGe BiCMOS technology 17.5 dbm d波段功率放大器和SiGe BiCMOS技术的倍频链
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997789
R. Ben Yishay, D. Elad
{"title":"A 17.5-dBm D-band power amplifier and doubler chain in SiGe BiCMOS technology","authors":"R. Ben Yishay, D. Elad","doi":"10.1109/EUMIC.2014.6997789","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997789","url":null,"abstract":"A D-Band ×2 frequency multiplier-amplifier chain implemented in a fT/fMAX = 200/250GHz 0.12μm SiGe BiCMOS technology is presented. The chain achieves a peak output power of 17.5dBm at 115GHz and consists of input balun and push-push frequency doubler which drives a balanced three stages Power Amplifier (PA). It operates from 108GHz to 128GHz (3 dB power bandwidth) with 3dBm input power at V-Band and consumes a total DC power of 600mW. The PA achieves output 1dB compression point and saturated power of 13.3 and 17.1dBm, respectively, at 120GHz and peak small signal gain of 25.5dB.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128278933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
The development of a European industrial source of GaN epitaxy for RF applications at IQE Europe 在IQE欧洲开发用于射频应用的GaN外延的欧洲工业来源
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997831
T. Martin, P. Wright, R. Blunt, A. Pooth, C. Liu, A. Gott, L. Lees
{"title":"The development of a European industrial source of GaN epitaxy for RF applications at IQE Europe","authors":"T. Martin, P. Wright, R. Blunt, A. Pooth, C. Liu, A. Gott, L. Lees","doi":"10.1109/EUMIC.2014.6997831","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997831","url":null,"abstract":"The capability to deliver stable repeatable epitaxy optimised for breakdown, current slump, uniformity and tuned to individual foundry specifications and processes is critical to a successful supply chain in GaN RF devices. In this paper we will provide an overview of the advances at IQE Europe in the development of GaN H-FET epitaxy for RF applications. The GaN epitaxy at IQE Europe is undertaken within the existing foundry epitaxy facility and where appropriate shares the established capability for wafer handling and characterisation. The focus of the development is on epitaxy on 100mm diameter semi-insulating SiC substrates sourced from European based suppliers, but data obtained using both 3 dia SiC and 150mm dia Silicon substrates is presented.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129673099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Diamond delta doped structures exhibiting ultra-sharp interfaces 具有超尖锐界面的金刚石δ掺杂结构
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997812
C. Mer-Calfati, N. Tranchant, P. Volpe, J. Arnault, P. Bergonzo, F. Jomard
{"title":"Diamond delta doped structures exhibiting ultra-sharp interfaces","authors":"C. Mer-Calfati, N. Tranchant, P. Volpe, J. Arnault, P. Bergonzo, F. Jomard","doi":"10.1109/EUMIC.2014.6997812","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997812","url":null,"abstract":"Boron delta-doping of diamond has appeared as a promising viable approach for the fabrication of high performance RF power transistors taking advantage of diamond properties. Here structures based on p-/p+/p- multilayers were synthesised on (100) HPHT Ib substrates using MPCVD. An original gas injector system was developed enabling to significantly improve the sharpness of both interfaces between p+ and p- layers with a good reproducibility. SIMS profiles recorded on the doping transients still demonstrate an asymmetry of the interface sharpness from 7nm/decade to 2nm/dec on the p-/p+ and the p+/p- interfaces, respectively. The observed differences are here explained and confirmed experimentally, and result from the combination of ion mixing with the effect of the surface roughness, thus limiting the SIMS resolution in depth. The MRI (Mixing Roughness Information) model then allows to evaluate the real value of the delta thickness achievable using this technique to 7 nm and the negative and positive gradients to identical values, namely of 1.4 nm/dec.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127917916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
9mW 6Gbps bi-directional 85–90GHz transceiver in 65nm CMOS 9mW 6Gbps双向85-90GHz 65nm CMOS收发器
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997782
N. Weissman, E. Socher
{"title":"9mW 6Gbps bi-directional 85–90GHz transceiver in 65nm CMOS","authors":"N. Weissman, E. Socher","doi":"10.1109/EUMIC.2014.6997782","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997782","url":null,"abstract":"A Colpitts mm-wave VCO is used for modulating and de-modulating high data rates using two modes of operation, enabling multi-Gbps transceiver with small size and low power. As a VCO 4 GHz tuning range is achieved with a peak output power of +5 dBm at 87 GHz and a phase noise of -93 dBc/Hz at 1 MHz offset. Gate bias modulation achieves up to 6 Gbps ASK modulation with only 9 mW power consumption. In reverse operation as a detector without bias current, the circuit achieves a voltage responsivity of 4.5 kV/W, current responsivity of 5.4 A/W at 85 GHz and NEP of 0.95 pW/√Hz at 90 GHz. As a passive detector it achieves an open eye for 6 Gbps ASK data modulating an 85 GHz carrier. The design occupies only 0.18 mm2 including pads.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123863071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A 57–66 GHz power amplifier with a linearization technique in 65-nm CMOS process 基于65纳米CMOS工艺线性化技术的57-66 GHz功率放大器
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997854
Jin-Fu Yeh, J. Cheng, Jeng‐Han Tsai, Tian-Wei Huang
{"title":"A 57–66 GHz power amplifier with a linearization technique in 65-nm CMOS process","authors":"Jin-Fu Yeh, J. Cheng, Jeng‐Han Tsai, Tian-Wei Huang","doi":"10.1109/EUMIC.2014.6997854","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997854","url":null,"abstract":"This paper presents a linearization technique with a body diode for 60-GHz power amplifier (PA). This linearization technique aims to achieve adequate linear output power as PA operating under lower power consumption. This proposed technique can benefit the reduction of total power consumption of a 60-GHz phased array. The PA is implemented in TSMC 65-nm CMOS process. At 1-V supply voltage, the measured maximum output powers are all larger than 10 dBm over 57-66 GHz. Third-order inter-modulation distortion (IMD3) can be mitigated over 30 dB by the proposed linearization technique. Moreover, the improvement of IMD3 is larger than 25 dB among the entire operation bandwidth.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121524494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Subharmonically injection-locked oscillator using a nonlinear transmission line 采用非线性传输线的次谐波注入锁定振荡器
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997804
E. Fernandez, M. Pontón, A. Suárez, F. Ramírez
{"title":"Subharmonically injection-locked oscillator using a nonlinear transmission line","authors":"E. Fernandez, M. Pontón, A. Suárez, F. Ramírez","doi":"10.1109/EUMIC.2014.6997804","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997804","url":null,"abstract":"This work describes a first realization of an oscillator driven through a nonlinear transmission line (NLTL). In this way, the oscillator is able to synchronize to a sinusoidal injection source of much lower frequency. This can be understood as the result of two processes: high harmonic generation in the NLTL and frequency multiplication plus mixing in the oscillator device. The concept can be applicable in ultrawideband signal oscillators where synchronization should enable a fast oscillation start-up and facilitate the modulation process. As an example, it has been used here to obtain a pulsed-envelope oscillator at 6 GHz injected with a sinusoidal signal in the order of 100 MHz. The operation bands have been analyzed with a Poincaré map technique, allowing the detection of the bifurcation phenomena that delimit the stable synchronization ranges. For an understanding of the phase-noise spectrum, this spectrum is analyzed at higher injection frequencies with the conversion matrix approach. Very good results have been obtained in comparison with measurements.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131808900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A wideband 65nm CMOS transformer-coupled power amplifier for WiGig applications 一种用于WiGig应用的宽带65nm CMOS变压器耦合功率放大器
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997786
A. Larie, E. Kerhervé, B. Martineau, D. Belot
{"title":"A wideband 65nm CMOS transformer-coupled power amplifier for WiGig applications","authors":"A. Larie, E. Kerhervé, B. Martineau, D. Belot","doi":"10.1109/EUMIC.2014.6997786","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997786","url":null,"abstract":"This paper describes a compact two-stage pseudodifferential cascode power amplifier implemented in 7-metal-layer 65nm Low-Power CMOS process. A cascode topology is associated with wideband matching networks which combine integrated transformers and slow-wave transmission lines. The power amplifier achieves 26GHz of bandwidth from 48GHz to 74GHz, with a 1dB ripple flat gain between 50GHz and 70GHz. The circuit delivers 1dB-compressed and saturated output powers of 9.5dBm and 13dBm respectively, for a maximum power added efficiency of 6%. The active area occupies only 0.048mm2.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131903656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Low-phase-noise VCO with active resonator 带有源谐振器的低相位噪声压控振荡器
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997803
L. Pantoli, V. Stornelli, G. Leuzzi
{"title":"Low-phase-noise VCO with active resonator","authors":"L. Pantoli, V. Stornelli, G. Leuzzi","doi":"10.1109/EUMIC.2014.6997803","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997803","url":null,"abstract":"The phase noise of an oscillator tuned by an Active Resonator is compared to the phase noise of a Varactor-Tuned Oscillator, and to that of a fixed-frequency, Dielectric Resonator Oscillator for comparison. The three oscillators share the same active device and output network, and differ for the resonator only. The Active Resonator is composed of an active inductor for low losses and high Q-factor, and of a varactor for tunability. The active-resonator oscillator has better phase noise and slightly lower tunability with respect to the varactor-tuned oscillator, and slightly worse phase noise than the dielectric-resonator oscillator.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125244727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A K-band high performance frequency quadrupler using CG-CS balanced configuration in E/D-mode PHEMT process E/ d模式PHEMT工艺中采用CG-CS平衡配置的k波段高性能四倍频器
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997839
Guan-Yu Chen, Hong-Yeh Chang, Shou-Shen Weng, Yu-Cheng Liu, Y. Hsin, Yu-Chi Wang
{"title":"A K-band high performance frequency quadrupler using CG-CS balanced configuration in E/D-mode PHEMT process","authors":"Guan-Yu Chen, Hong-Yeh Chang, Shou-Shen Weng, Yu-Cheng Liu, Y. Hsin, Yu-Chi Wang","doi":"10.1109/EUMIC.2014.6997839","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997839","url":null,"abstract":"A K-band high conversion gain high efficiency frequency quadrupler using a GaAs E/D-mode pseudomorphic high electron-mobility transistor (PHEMT) technology is presented in this paper. The frequency quadrupler comprises two cascade frequency doublers. The frequency doubler employs a modified common-gate (CG)/common-source (CS) topology to enhance the second harmonic efficiently. The phase-shifter networks are utilized to improve the fundamental suppression. Between 22 and 27 GHz, the proposed frequency quadrupler features a conversion gain of higher than -1.2 dB with an input power of 0 dBm. The maximum conversion gain is 1.8 dB at 25.6 GHz with an efficiency of up to 5.7% and a power-added efficiency (PAE) of 2%. At 24-GHz output frequency, the maximum output 1-dB compression point (P1dB) and the output saturation power (Psat) are higher than 2 and 3 dBm, respectively.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131335964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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