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28 Watt X-band silicon P-I-N diode RFIC switches 28瓦x波段硅P-I-N二极管RFIC开关
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997793
J. Brogle, A. Rozbicki, T. Boles
{"title":"28 Watt X-band silicon P-I-N diode RFIC switches","authors":"J. Brogle, A. Rozbicki, T. Boles","doi":"10.1109/EUMIC.2014.6997793","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997793","url":null,"abstract":"Terminated and reflective integrated P-I-N diode switches capable of greater than 28W measured linear power handling at X-band have been developed. These extremely high performance devices exhibit low insertion loss, high isolation and excellent match to a 50ohm system. The enabling technology is M/A-COM Technology Solutions' patented silicon-glass HMIC process, providing lower parasitic impedances and variation than hybrid-discrete P-I-N diode modules. Test results of HMIC-fabricated switches are presented and compared with thermal models and EM simulations. Power linearity performance (0.1dB compression @ 28W) has been demonstrated in a silicon-based technology, superior to reported GaN HEMT switch performance.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131904614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Robust wideband LNA designs 稳健的宽带LNA设计
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997823
U. Schmid, R. Reber, P. Schuh, M. Oppermann
{"title":"Robust wideband LNA designs","authors":"U. Schmid, R. Reber, P. Schuh, M. Oppermann","doi":"10.1109/EUMIC.2014.6997823","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997823","url":null,"abstract":"This paper presents the design and measurement results of robust wideband low noise amplifiers (LNAs) for multifunctional next-generation active electronically scanned antenna applications targeting the frequency range from 5 to 18GHz. The presented LNAs offer different bond wire options to face a trade-off between RF performance, power handling capability, and power consumption. In a high RF performance mode the first LNA offers 3.5-dB noise figure (NF), 14-dB linear gain, an input referred 3rd order intercept point (IIP3) of 10 dBm, and survives 10W RF input power, consuming only 960-mW dc power. In applications where subsequent electronics need to be protected against high power levels, the LNA offers an output power limiting mode with only minor impact on RF performance. A second LNA is a balanced design with Lange couplers at the input and at the output with a positive effect on input and output return loss.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132815812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Towards perfect impedance matching of free space to a 2D material 实现自由空间与二维材料的完美阻抗匹配
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMC.2014.6986722
P. Pham, Yung-Yu Wang, P. Burke, Weidong Zhang, E. Brown
{"title":"Towards perfect impedance matching of free space to a 2D material","authors":"P. Pham, Yung-Yu Wang, P. Burke, Weidong Zhang, E. Brown","doi":"10.1109/EUMC.2014.6986722","DOIUrl":"https://doi.org/10.1109/EUMC.2014.6986722","url":null,"abstract":"Graphene, with its distinctive and outstanding optoelectronic properties, has prompted its use in a wide variety of applications such as transparent conductive electrodes and modulators. Recently, due to advances in graphene synthesis methods, large-area graphene field effect transistors (GFET) have displayed unique modulation of terahertz waves. By transferring chemical vapor deposited graphene films (~1 cm × 1 cm) onto a high resistivity silicon substrate to fabricate a GFET, we calculate the AC conductivity extrapolated by measuring the terahertz transmission. We demonstrate the tunable modulation of the AC conductivity using a DC gate voltage, in parallel with broadband (0.2-1.2 THz) frequency domain measurements.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115295579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
An 8-way power-combining E-band amplifier in a SiGe HBT technology 一种采用SiGe HBT技术的8路功率组合e带放大器
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997787
E. Öjefors, C. Stoij, B. Heinemann, H. Rücker
{"title":"An 8-way power-combining E-band amplifier in a SiGe HBT technology","authors":"E. Öjefors, C. Stoij, B. Heinemann, H. Rücker","doi":"10.1109/EUMIC.2014.6997787","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997787","url":null,"abstract":"An E-band power amplifier is demonstrated in an evaluation version of a fT/fmax 300-GHz/450-GHz SiGe:C BiCMOS technology. Eight-way power combining of the outputs of transformer-matched differential-cascode unit cells is used in the final stage of the amplifier. A breakout of the final stage yields a measured small-signal gain of 14 dB at 80 GHz with a 16-GHz bandwidth, whereas a version of the amplifier with an integrated 4-way power-combined pre-driver provides 28 dB gain. In the 71-76-GHz sub-band, a saturated output power of 22 dBm with an output 1-dB compression point of 20 dBm is measured, while 19 dBm output power and a 17-dBm compression point is obtained in the 81-86-GHz band. The current consumption at a 3.3-V supply voltage is 330 mA for the output stage and 500 mA for the amplifier with an integrated pre-driver.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130800026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A SiGe-based E-band power amplifier with 17.7 dBm output power and 325-GHz GBW 一种基于sige波段功率放大器，输出功率为17.7 dBm, GBW为325 ghz
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997790
M. Furqan, Faisal Ahmed, A. Stelzer
{"title":"A SiGe-based E-band power amplifier with 17.7 dBm output power and 325-GHz GBW","authors":"M. Furqan, Faisal Ahmed, A. Stelzer","doi":"10.1109/EUMIC.2014.6997790","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997790","url":null,"abstract":"A high-gain, wideband power amplifier (PA) in 0.18-μm SiGe HBT technology covering the three high-speed E-band communication channels (71-76 GHz, 81-86GHz and 92-95 GHz) is presented. The architecture is based on a class-A three stage cascode amplifier. Bandwidth enhancement is achieved using inter-stage lossy-matching and gain-staggering techniques. The PA demonstrates a peak small-signal gain of 23dB and a saturated output power (Psat) of 17.7 dBm with a 14.8% power-added efficiency (PAE). With a 3-dB gain and Psat bandwidth of about 23GHz, it shows a fractional bandwidth of more than 27%. The PA draws 115mA from a 3.3-V supply.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124378277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Compact sub-harmonic mixer for Q-band satellite communications 用于q波段卫星通信的紧凑型次谐波混频器
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997791
D. Palombini, S. Arena, T. Cavanna, E. Limiti
{"title":"Compact sub-harmonic mixer for Q-band satellite communications","authors":"D. Palombini, S. Arena, T. Cavanna, E. Limiti","doi":"10.1109/EUMIC.2014.6997791","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997791","url":null,"abstract":"The design and performance of an extremely compact Q-band sub-harmonic mixer for EHF satellite communication is presented. Proposed architecture, integrating an LO buffering section, allows for the frequency conversion between Q and X bands by means of a 19.5 GHz pump signal. Double balanced mixer topology and multi-conductor RF balun respectively guarantee high port isolation and low conversion loss. Realized circuit results in a really compact implementation (2.4×2.4mm2) and operates in the 43.5-50 GHz band featuring about 12dB conversion loss.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126971231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A D-Band 180° phase shifter with very low amplitude- and phase-error 一种具有非常低幅度和相位误差的d波段180°移相器
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997820
D. Muller, J. Langst, A. Tessmann, A. Leuther, T. Zwick, I. Kallfass
{"title":"A D-Band 180° phase shifter with very low amplitude- and phase-error","authors":"D. Muller, J. Langst, A. Tessmann, A. Leuther, T. Zwick, I. Kallfass","doi":"10.1109/EUMIC.2014.6997820","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997820","url":null,"abstract":"Phase shifters are at the heart of phased array systems which enable beam steering techniques. This paper presents a 180° digital phase shifter MMIC employing two SPDT switches which are realized in a 50 nm metamorphic high electron mobility transistor technology. For the phase difference generation two identical couplers with different terminations are used. The measurement results show only 0.1 dB amplitude imbalance and less than ±3.5° phase imbalance between 115 and 155 GHz. The transmission loss is less than 5.6 dB and the input and output matching are better than -10 dB in the considered frequency range. The fabricated chip-size is 1.25 × 0.75 mm2 including the test pads.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127559161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
VSWR testing of RF-power GaN transistors 射频功率GaN晶体管的驻波测试
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997892
O. Bengtsson, S. Chevtchenko, A. Chowdhary, W. Heinrich, J. Wurfl
{"title":"VSWR testing of RF-power GaN transistors","authors":"O. Bengtsson, S. Chevtchenko, A. Chowdhary, W. Heinrich, J. Wurfl","doi":"10.1109/EUMIC.2014.6997892","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997892","url":null,"abstract":"A novel procedure for voltage standing wave ratio (VSWR) ruggedness testing of GaN-HEMTs is described. In the test the transistor is exposed to an increasing level of VSWR stress and an extensive set of marker parameters are monitored before, during, and after stress. A gate- and drain-lag pulse response test has been developed that reveals VSWR stress influence on slow surface charges. Recovery is monitored after each stress-point. It has been found that high VSWR stress of GaN-HEMTs at low supply voltages foremost causes a temporary shift in pinch-off voltage. Prolonged stress at even moderate VSWR levels at higher supply voltage can lead to structural changes and irreversible degradation of the electrical performance. The mechanism for this degradation is found to be a combination of thermal and field stress.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121025035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Compact E-band single-chip transmitter using 0.1μm GaAs pHEMT process 采用0.1μm GaAs pHEMT工艺的紧凑e波段单片发射机
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997848
Minsoo Kang, Bongsu Kim, W. Byun, Kwangseon Kim
{"title":"Compact E-band single-chip transmitter using 0.1μm GaAs pHEMT process","authors":"Minsoo Kang, Bongsu Kim, W. Byun, Kwangseon Kim","doi":"10.1109/EUMIC.2014.6997848","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997848","url":null,"abstract":"In this paper, the design and implementation of medium power amplifier(MPA), 4th sub-harmonically pumped (SHP) mixer, and a wideband single chip transmitter for E-band P2P(Point-to-Point) wireless communication system with 0.1μm GaAs pHEMT process are presented. To obtain wideband characteristic of MPA up to 15GHz, operating band(71-86 GHz), low impedance transmission line matching method has been used. In order to apply easy LO signal to the mixer, 4th SHP (Sub-Harmonically Pumped) mixer has been designed. From the measured results, the 3-stage MPA shows a gain of 19.0~20.8dB and an output P1dB of 11~15dBm. The 4th SHP mixer shows conversion loss of 15~18dB and an input P1dB of +1dBm. Finally, the single-chip transmitter based on MPA and the 4th SHP mixer shows expected results of a gain of 0~5dB and output P1dB of +4dBm.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133073319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Manga: Manufacturable GaN SiC substrates and GaN epi wafer supply chain 曼加：可制造氮化镓碳化硅衬底和氮化镓外延片供应链
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997832
M. Mikulla, S. Storm, N. Henelius, M. Poisson, E. Zanoni, Martin Kuball
{"title":"Manga: Manufacturable GaN SiC substrates and GaN epi wafer supply chain","authors":"M. Mikulla, S. Storm, N. Henelius, M. Poisson, E. Zanoni, Martin Kuball","doi":"10.1109/EUMIC.2014.6997832","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997832","url":null,"abstract":"Manga (Manufacturable GaN: SiC substrates and GaN epi wafers supply chain) is a five nations (Germany, France, Italy, Sweden and the United Kingdom) program performed under the umbrella of the European Defense Agency (EDA). As a main aim the European capacity for an industrial production of high quality 100-mm semi-insulating SiC substrates has been shown. The achieved quality of the material has been validated by the GaN HEMT and MMIC foundry partners within the program. Results regarding transistor performance, reliability and the status of industrialization achieved in the Manga program are described. In addition, substantial progress has been made in the growing and processing of advanced InAlN-based HEMT structures for high-frequency applications. Well recognized research institutes from European universities have contributed with their expertise in detailed characterization of deep levels and parasitic effects in GaN HEMT devices in order to improve substrate quality and epitaxial growth conditions. The consortium is now planning for a follow-on project focusing on further substrate improvement, the qualification of an industrial European epi-wafer supplier as well as reliability aspects and advanced materials.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131466029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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