2014 9th European Microwave Integrated Circuit Conference最新文献_第4页

Decade bandwidth 4 bits MMIC phase shifter for T/R modules 用于T/R模块的十进带宽4位MMIC移相器

2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997838

M. Ferrari, L. Piattella

引用次数: 1

20 nm Metamorphic HEMT technology for terahertz monolithic integrated circuits 用于太赫兹单片集成电路的20nm变质HEMT技术

2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997797

A. Leuther, A. Tessmann, P. Doria, M. Ohlrogge, M. Seelmann-Eggebert, Hermann Masler, M. Schlechtweg, O. Ambacher

{"title":"20 nm Metamorphic HEMT technology for terahertz monolithic integrated circuits","authors":"A. Leuther, A. Tessmann, P. Doria, M. Ohlrogge, M. Seelmann-Eggebert, Hermann Masler, M. Schlechtweg, O. Ambacher","doi":"10.1109/EUMIC.2014.6997797","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997797","url":null,"abstract":"A metamorphic high electron mobility transistor (mHEMT) technology with 20 nm gate length for manufacturing of terahertz monolithic integrated circuits (TMICs) is presented. The passive elements include up to four interconnection metallization layers separated by low-k dielectrics (BCB), SiN and air which can be used to realize front side signal lines. Shielding the substrate from the electromagnetic field on the wafer front side eliminates the need of a costly back side process including wafer thinning, through substrate via etching and back side metallization. The semiconductor heterostructure of the mHEMT comprises a strained pure InAs channel with high electron mobility and high electron density for proper device scaling. The realized mHEMTs achieve a source resistance rS of 0.12 Ωmm which is required to minimize resistive losses in combination with an extrinsic maximum transconductance gm_max of 2850 mS/mm. Elaborated on wafer calibration procedures and optimized test transistor layouts were used to improve the precision of the S-parameter measurements up to a frequency of 450 GHz which than could be used for model extraction. The presented 20 nm mHEMT technology was employed for the design of a compact eight stage low-noise amplifier (LNA) using miniaturized microstrip lines on BCB. The measured small signal gain of the LNA exceeds 15 dB from 500-635 GHz.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128072628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 33

Hybrid LNAs with SiGe HBTs on 7th generation BiCMOS process

2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997888

S. Bhaumik, J. G. Bij de Vaate

引用次数: 2

Single-crystal diamond microwave devices for space applications 空间应用单晶金刚石微波器件

2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997815

Stephen A. O. Russell, David A. J. Moran, Claudio Verona, Ernesto Limiti, F. Cappelluti, G. Ghione, A. Barnes

引用次数: 1

An E-band 40dB dynamic range multi-tanh power detector in 0.13μm SiGe technology 采用0.13μm SiGe技术的e波段40dB动态范围多波长功率探测器

2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997819

Run Levinger, O. Katz, B. Sheinman, R. Carmon, R. Ben-Yishay, N. Mazor, S. Pivnik, D. Elad, E. Socher

引用次数: 4

Design of a 2 Gb/s transceiver at 60 GHz with integrated antenna in bulk CMOS technology 基于CMOS技术的60ghz集成天线2gb /s收发器设计

2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997784

S. Saponara, L. Mattii, B. Neri, F. Baronti, L. Fanucci

{"title":"Design of a 2 Gb/s transceiver at 60 GHz with integrated antenna in bulk CMOS technology","authors":"S. Saponara, L. Mattii, B. Neri, F. Baronti, L. Fanucci","doi":"10.1109/EUMIC.2014.6997784","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997784","url":null,"abstract":"This work presents the design of a 60 GHz OOK transceiver, with on-chip integrated antenna, for multi Gbit short-range wireless communication. A 65 nm bulk CMOS technology has been selected as target to prove that high-speed fully-integrated RF transceivers can be realized also with low cost digital technologies, suited for wireless consumer applications. The OOK modulation scheme allows for low complex transceiver architecture with all passive and active devices integrated on-chip. At TX side the power stage combines two class-A power amplifiers in a pseudo differential scheme, each made up of a 2 stage Common Source topology with a GT gain of 6.8 dB and a OP1dB of 8.2 dBm. The whole transmitter allows for an output power of about 11 dBm. The antenna is integrated on-chip adopting an half-wavelength dipole topology. Simulated results are a radiation efficiency of 38% and a gain of -1.76 dBi. At RX side a single-stage cascode LNA with a GT gain of 11.46 dB and a noise figure (NF) of 4.69 dB is followed by an OOK demodulator realized with a simple envelope detector. Since both antenna and LNA are integrated on-chip, the impedance matching is not constrained to a 50 Ω value, but its value can be tuned to find an optimal trade-off between NF and gain of the receiver. Combining the proposed RF transceiver with the use of Reed-Solomon channel coding in the digital baseband a data link with an effective data rate of 2 Gb/s can be implemented; the BER is less than 10-5 and 10-12 at 2 m and 1.1 m distance respectively.1","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129836896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

A fully integrated 8-channel wide-band receiver for Ku-band dual-polarization phased array in SiGe BiCMOS 全集成8通道ku波段双极化相控阵SiGe BiCMOS宽带接收机

2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997785

P. Klatser, R. Boot, Gerard Voshaar, C. Roeloffzen

引用次数: 7

Diamond FETs using heterojunction and high-k dielectrics 采用异质结和高k介电体的金刚石场效应管

2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997814

Y. Koide, M. Imura, J. Liu, M. Liao

引用次数: 0

A low magnetic bias sub-millimetre wave semiconductor junction circulator 一种低磁偏置亚毫米波半导体结环行器

2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997938

G. Jawad, R. Sloan

引用次数: 3

Light sensitivity of GaAs pHEMT's: A close insight into the microwave noise behavior GaAs pHEMT的光敏性:对微波噪声行为的深入研究

2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-29 DOI: 10.1109/EUMIC.2014.6997830

A. Caddemi, G. Crupi, G. Salvo

引用次数: 4