The development of a European industrial source of GaN epitaxy for RF applications at IQE Europe

Abstract

The capability to deliver stable repeatable epitaxy optimised for breakdown, current slump, uniformity and tuned to individual foundry specifications and processes is critical to a successful supply chain in GaN RF devices. In this paper we will provide an overview of the advances at IQE Europe in the development of GaN H-FET epitaxy for RF applications. The GaN epitaxy at IQE Europe is undertaken within the existing foundry epitaxy facility and where appropriate shares the established capability for wafer handling and characterisation. The focus of the development is on epitaxy on 100mm diameter semi-insulating SiC substrates sourced from European based suppliers, but data obtained using both 3 dia SiC and 150mm dia Silicon substrates is presented.