2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)最新文献_第2页

A Wide Locking-Range, Low Phase-Noise and High Output Power D-Band SiGe PLL 宽锁相范围，低相位噪声，高输出功率d波段SiGe锁相环

2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2020-01-01 DOI: 10.1109/SIRF46766.2020.9040189

S. Zeinolabedinzadeh, Ickhung Song, M. Kaynak, J. Cressler

{"title":"A Wide Locking-Range, Low Phase-Noise and High Output Power D-Band SiGe PLL","authors":"S. Zeinolabedinzadeh, Ickhung Song, M. Kaynak, J. Cressler","doi":"10.1109/SIRF46766.2020.9040189","DOIUrl":"https://doi.org/10.1109/SIRF46766.2020.9040189","url":null,"abstract":"A fully integrated, wide locking-range fundamental frequency SiGe phase-locked-loop (PLL) at D-band is proposed which utilizes coupled voltage-controlled-oscillators (VCOs) to generate and distribute balanced RF signals in a symmetric and compact form factor. The proposed technique facilitates the balanced LO distribution, increases the output power, improves the phase noise, and increases the locking range of frequency dividers at the same time, all at the cost of increased DC power consumption. The designed VCO achieves better than 10% DC-to-RF conversion efficiency across the entire tuning-range and provides output power of better than +8 dBm. The VCO achieves a FoMt of more than 194, which, to the best of our knowledge is the highest FoMt among the reported D-band VCOs. The PLL was fully integrated in a 130 nm SiGe BiCMOS technology. This PLL locks at 105–117 GHz. It achieves a phase noise of better than −100 dBc/ Hz and −121 dBc/ Hz at 1 MHz and 10 MHz offset from a 116 GHz carrier, respectively. The measured average output power is better than +8 dBm across the entire locking-range.","PeriodicalId":221526,"journal":{"name":"2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"13 10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126016945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A 20–60 GHz Ultra-Wideband SPDT Switch for Multi-Band Transceivers 用于多波段收发器的20-60 GHz超宽带SPDT开关

2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2020-01-01 DOI: 10.1109/SIRF46766.2020.9040186

J. Qayyum, J. Albrecht, J. Papapolymerou, A. Ulusoy

引用次数: 3

rww_2020_program_book rww_2020_program_book

2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2020-01-01 DOI: 10.1109/sirf46766.2020.9040192

引用次数: 0

Measurement and Deembedding Technique for the on-wafer Characterization of Multiport Devices 多端口器件片上特性的测量和去嵌入技术

2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2020-01-01 DOI: 10.1109/SIRF46766.2020.9040178

Audrey Cayron, C. Viallon, A. Ghannam, A. Magnani, T. Parra

引用次数: 1

Thermo-Mechanical Modeling and Experimental Validation of an Uncooled Microbolometer 非冷却微热计的热力学建模与实验验证

2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2020-01-01 DOI: 10.1109/SIRF46766.2020.9040193

C. Kaynak, A. Goeritz, E. C. Durmaz, M. Wietstruck, E. Onat, A. Ozcan, E. R. Turkoglu, Y. Gurbuz, M. Kaynak

引用次数: 2

Progress Towards Fully On-Chip Frequency-Stabilization for Sub-Terahertz Sources 亚太赫兹源完全片上稳频的研究进展

2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2020-01-01 DOI: 10.1109/SIRF46766.2020.9040182

M. Taba, Zainulabideen J. Khalifa, S. Naghavi, E. Afshari

{"title":"Progress Towards Fully On-Chip Frequency-Stabilization for Sub-Terahertz Sources","authors":"M. Taba, Zainulabideen J. Khalifa, S. Naghavi, E. Afshari","doi":"10.1109/SIRF46766.2020.9040182","DOIUrl":"https://doi.org/10.1109/SIRF46766.2020.9040182","url":null,"abstract":"All promising applications of sub-terahertz (sub-THz) and millimeter-wave (mm-wave) systems, from molecular spectroscopy with absolute spectral specificity, high-resolution imaging and sensing, and ultra-high-speed communications, require the design of frequency-stabilized signal generators. In this paper, we review the recent progress made in UNIC group at the University of Michigan, to implement stabilized-frequency signal generators at sub-THz frequencies. First, we report a coherent imaging transceiver at 319–323 GHz, which utilizes a conventional phase-locked loop technique for frequency locking. It achieves radiated power of 2 mW with the total DC power consumption of 605 mW. To eliminate the frequency divider and off-chip reference in the PLL loop, we report another work based on the new idea of on-chip frequency stabilization feedback. It is a 308–317 GHz frequency stabilized high-output-power radiating array with peak-radiated power of 4.6 mW and total DC power consumption of 1.18 W. All of the above circuits are fabricated using 130 nm SiGe:C BiCMOS technology.","PeriodicalId":221526,"journal":{"name":"2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128657445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Comparison of PMOS and NMOS in a 14-nm RF FinFET technology: RF Characteristics and Compact Modeling PMOS和NMOS在14nm射频FinFET技术中的比较:射频特性和紧凑建模

2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2020-01-01 DOI: 10.1109/SIRF46766.2020.9040187

Jiabi Zhang, G. Niu, W. Cai, K. Imura

引用次数: 8

A 22 to 28 GHz SiGe Superregenerative Amplifier with Integrated Quench Pulse Shaping for FMCW Radar Active Reflector Tags 一种用于FMCW雷达有源反射器标签的集成淬灭脉冲整形22 ~ 28 GHz SiGe超再生放大器

2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2020-01-01 DOI: 10.1109/SIRF46766.2020.9040188

M. V. Thayyil, N. Joram, F. Ellinger

引用次数: 0

Extended Equivalent Circuit Model for Enhanced Substrate Modeling of Three-Port Inductors 扩展等效电路模型用于增强三端口电感器基板建模

2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2020-01-01 DOI: 10.1109/SIRF46766.2020.9040195

Sascha Breun, Sebastian Kehl-Waas, V. Issakov

引用次数: 0

Silicon Based Millimeter Wave ASICs: From Circuits to System Applications 硅基毫米波专用集成电路:从电路到系统应用

2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2020-01-01 DOI: 10.1109/SIRF46766.2020.9040194

Kefei Wu, M. Hella

{"title":"Silicon Based Millimeter Wave ASICs: From Circuits to System Applications","authors":"Kefei Wu, M. Hella","doi":"10.1109/SIRF46766.2020.9040194","DOIUrl":"https://doi.org/10.1109/SIRF46766.2020.9040194","url":null,"abstract":"The increasing demand for bandwidth in applications such as high speed communication transceivers and rotational gas spectroscopy, has driven recent research efforts in the millimeter wave and terahertz circuits and systems. This revived interest goes hand-in-hand with advances in modern CMOS and SiGe technologies that are capable of providing transistors with cutoff frequencies $f_{max}$ above 200 GHz and expected to approach 1 THz within few years. Such technologies are key enablers for low cost, high yield, multi-functional and highly integrated digitally enhanced systems. However, as the cutoff frequency of transistors increase, their output power, particularly when covering a wide bandwidth becomes very limited. In addition, switching such transistors as they operate close to their $f_{max}$ is a challenging task that requires rethinking the traditional communications and sensing/spectroscopy architectures with emphasis on extracting the output power of transistors while transmitting data rates exceeding tens and hundreds of Gbps and / or scanning a wide bandwidth. In this paper, we review recent progress on silicon-based fundamental building blocks for high power, wide band signal sources and high speed transceiver architectures at frequencies greater than or equal 100 GHz.","PeriodicalId":221526,"journal":{"name":"2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129962577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2