A Wide Locking-Range, Low Phase-Noise and High Output Power D-Band SiGe PLL

S. Zeinolabedinzadeh, Ickhung Song, M. Kaynak, J. Cressler
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Abstract

A fully integrated, wide locking-range fundamental frequency SiGe phase-locked-loop (PLL) at D-band is proposed which utilizes coupled voltage-controlled-oscillators (VCOs) to generate and distribute balanced RF signals in a symmetric and compact form factor. The proposed technique facilitates the balanced LO distribution, increases the output power, improves the phase noise, and increases the locking range of frequency dividers at the same time, all at the cost of increased DC power consumption. The designed VCO achieves better than 10% DC-to-RF conversion efficiency across the entire tuning-range and provides output power of better than +8 dBm. The VCO achieves a FoMt of more than 194, which, to the best of our knowledge is the highest FoMt among the reported D-band VCOs. The PLL was fully integrated in a 130 nm SiGe BiCMOS technology. This PLL locks at 105–117 GHz. It achieves a phase noise of better than −100 dBc/ Hz and −121 dBc/ Hz at 1 MHz and 10 MHz offset from a 116 GHz carrier, respectively. The measured average output power is better than +8 dBm across the entire locking-range.
宽锁相范围,低相位噪声,高输出功率d波段SiGe锁相环
提出了一种d波段全集成、宽锁定范围基频SiGe锁相环(PLL),该锁相环利用耦合压控振荡器(vco)以对称和紧凑的形式产生和分配平衡的射频信号。所提出的技术有助于平衡本振分布,增加输出功率,改善相位噪声,同时增加分频器的锁定范围,所有这些都是以增加直流功耗为代价的。设计的VCO在整个调谐范围内实现了优于10%的dc - rf转换效率,并提供了优于+8 dBm的输出功率。VCO实现了超过194的fmt,据我们所知,这是报道的d波段VCO中最高的fmt。锁相环完全集成在130纳米SiGe BiCMOS技术中。这个锁相环锁定在105-117 GHz。在距116 GHz载波1mhz和10mhz的偏移处,相位噪声分别优于−100 dBc/ Hz和−121 dBc/ Hz。在整个锁定范围内,测量的平均输出功率优于+8 dBm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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