Progress Towards Fully On-Chip Frequency-Stabilization for Sub-Terahertz Sources

M. Taba, Zainulabideen J. Khalifa, S. Naghavi, E. Afshari
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引用次数: 1

Abstract

All promising applications of sub-terahertz (sub-THz) and millimeter-wave (mm-wave) systems, from molecular spectroscopy with absolute spectral specificity, high-resolution imaging and sensing, and ultra-high-speed communications, require the design of frequency-stabilized signal generators. In this paper, we review the recent progress made in UNIC group at the University of Michigan, to implement stabilized-frequency signal generators at sub-THz frequencies. First, we report a coherent imaging transceiver at 319–323 GHz, which utilizes a conventional phase-locked loop technique for frequency locking. It achieves radiated power of 2 mW with the total DC power consumption of 605 mW. To eliminate the frequency divider and off-chip reference in the PLL loop, we report another work based on the new idea of on-chip frequency stabilization feedback. It is a 308–317 GHz frequency stabilized high-output-power radiating array with peak-radiated power of 4.6 mW and total DC power consumption of 1.18 W. All of the above circuits are fabricated using 130 nm SiGe:C BiCMOS technology.
亚太赫兹源完全片上稳频的研究进展
亚太赫兹(sub-THz)和毫米波(mm-wave)系统的所有有前途的应用,从具有绝对光谱特异性的分子光谱,高分辨率成像和传感,以及超高速通信,都需要设计频率稳定的信号发生器。本文综述了美国密歇根大学UNIC研究组在亚太赫兹频率下实现稳频信号发生器方面的最新进展。首先,我们报告了一个319-323 GHz的相干成像收发器,它利用传统的锁相环技术进行频率锁定。其辐射功率为2mw,直流总功耗为605mw。为了消除锁相环中的分频器和片外参考,我们报道了基于片上稳频反馈新思想的另一项工作。它是一种308-317 GHz频率稳定的高输出功率辐射阵列,峰值辐射功率为4.6 mW,总直流功耗为1.18 W。上述所有电路均采用130 nm SiGe:C BiCMOS技术制造。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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