H. E. Z. Abidin, A. A. Hamzah, M. A. Mohamed, B. Majlis, Reena Sri Selvarajan
{"title":"Growth time dependent of high quality graphene on interdigital electrodes for MEMS supercapacitor","authors":"H. E. Z. Abidin, A. A. Hamzah, M. A. Mohamed, B. Majlis, Reena Sri Selvarajan","doi":"10.1109/RSM.2017.8069153","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069153","url":null,"abstract":"This paper discusses direct growth of graphene on the interdigital electrodes for MEMS supercapacitor application. In addition, a high quality graphene was grown by using radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) at temperature of 1000°C at various deposition time from 2–10 minutes at fixed power of 40 Watt. The graphene growth structure on the interdigital electrodes was characterized by Raman spectroscopy and atomic force microscopy (AFM). Raman spectra indicate that the intensity ratio of the 2D band and G band (I2d/Ig) is 1.00 and the value of FWHM is 54.26 cm−1 which produced a good quality bilayer graphene. Atomic Force Microscopy (AFM) result shows the surface roughness of the structure is 68.56nm.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131503107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Electrical characterization of gold contact on porous silicon layers","authors":"M. A. Hussin, M. Abidin","doi":"10.1109/RSM.2017.8069138","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069138","url":null,"abstract":"Investigation on metallic contact on porous silicon (PS) layers is typically important before final integration into application devices. The electrical characterization of Au thickness of 100 nm and ∼210 nm on ∼3 μm and ∼6 μm PS thickness on PS were studied by measuring the current-voltage (I-V) response. The PS layers of n-type oriented silicon (Si) wafer were prepared by electrochemical etching. Au was deposited on the PS layers using Q150RS automated sputter coater. Based on scanning electron microscope (SEM) images, the thickness of PS was confirmed as 3.07 μm and 6.15 μm for respective samples. The average pore diameter was determined with the aid of ImageJ and Matlab by applying image processing analysis. There were found to be 17.91 μm and 27.26 μm respectively. The I-V curve of PS with Au contact showed significant tendency of Ohmic behaviour compared to non-PS samples that shows Schottky behaviour. The higher conductivity was obtained from sample 3.07 μm of PS thickness with 100 nm Au. Based on this analysis, it can be concluded that thickness of Au and thickness of PS affect the performance of Au-PS device as the conductivity increases as the thickness of Au on PS layers was decreased.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131677296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
F. W. Yunus, A. A. Hamzah, M. R. Buyong, J. Yunas, B. Majlis
{"title":"Negative charge dielectrophoresis by using different radius of electrodes for biological particles","authors":"F. W. Yunus, A. A. Hamzah, M. R. Buyong, J. Yunas, B. Majlis","doi":"10.1109/RSM.2017.8069126","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069126","url":null,"abstract":"Dielectrophoresis (DEP) is a force that is exerted on a dielectric field particle when it is subjected to a non-uniform electric field. There are many applications of DEP and one of them is the separation of particles. In this paper, there are four electrodes that are made of the same materials and same thickness but varying radius curvatures (0μm, 5μm, 10μm and 15μm) are used to identify the direction, maximum value and also the distribution of electric field. The electric field was analysed at z-axis by using COMSOL Multiphysics software for biological particles in an artificial kidney. Results showed that the electrode with 0μm radius curve has the highest electric field, 5.011×106 V/m and the 15μm radius curve electrode has the lowest electric field, 0.889×106 V/m. However, based on the simulation results, electrodes with 15 radiuses curve shows the electric fields are much more uniform as compared to the other three. Thus, the 15μm radius-curved electrodes are chosen for negative charge DEP in an artificial kidney.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127637137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Rajapaksha, U. Hashim, N. Natasha, M. Uda, V. Thivina, C. Fernando
{"title":"Gold nano-particle based Al interdigitated electrode electrical biosensor for specific ssDNA target detection","authors":"R. Rajapaksha, U. Hashim, N. Natasha, M. Uda, V. Thivina, C. Fernando","doi":"10.1109/RSM.2017.8069167","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069167","url":null,"abstract":"Interdigitated electrode based electrical biosensors are prominent in biosensor field. The large number of finger electrodes as comb structure gain high sensitivity through electrical measurements. Listeria monocytogenes is a serious food borne pathogen based bacterium that can cause dangerous disease to human, some infection may result in death. In here, biosensor was prepared from 1μm gap Aluminum Interdigitated Electrode (Al IDE). Functionalization steps of the Al IDE to create biosensor was based on silanization by APTES, immobilization with Gold Nano particles (GNPs) mixed single stranded Listeria synthetic probe ssDNA with Au nano-particles and blocking with tween-20. Before and after functionalization the sensor was characterized morphologically using SEM images and structurally using EDX spectra. The functionalization steps were electrically characterized using current-voltage measurements. The selectivity of the biosensor with specific target was identified electrically using complementary, non-complementary and single base mismatch ssDNA targets. Blocking step with tween-20 was important to detect target specifically. The obtained variations in current indicate the varied concentrations of Listeria targets and it is confirmed that biosensor is suitable to detect different concentrations in the range from 10 fM to 10 μΜ.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132042718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Temperature cycle test study on thick metal passivation cracks","authors":"H. Ahmataku, R. Sethu","doi":"10.1109/RSM.2017.8069159","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069159","url":null,"abstract":"Semiconductor passivation layer cracking is considered critical as it can lead to moisture ingress into the device circuits and cause corrosion. The issue is more acute for high aspect ratio thick top metallization where the stress intensity factor (SIF) is higher. The cracks are caused by displacement of the metal which has a much larger Coefficient of Thermal Expansion (CTE) compared to the surrounding passivation layer. Inclusion of a sandwich titanium nitride (TiN) layer and higher Physical Vapor Deposition (PVD) temperature can reduce the probability of cracking. Metallization test structures with multiple corners have a higher chance of detecting cracks during process development.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133189010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}