2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)最新文献

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All-solution process flexible nanocomposite generator made of BaTiO3 nanoparticles and graphene quantum dots 由BaTiO3纳米粒子和石墨烯量子点制成的全溶液工艺柔性纳米复合材料发生器
2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2017-10-16 DOI: 10.1109/RSM.2017.8069163
E. A. Bakar, M. A. Mohamed, B. Majlis, O. H. Hassan, F. Omar, T. Kudin
{"title":"All-solution process flexible nanocomposite generator made of BaTiO3 nanoparticles and graphene quantum dots","authors":"E. A. Bakar, M. A. Mohamed, B. Majlis, O. H. Hassan, F. Omar, T. Kudin","doi":"10.1109/RSM.2017.8069163","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069163","url":null,"abstract":"We have demonstrated an all-solution-processed of flexible piezoelectric nanogenerator based on BaTiO3 and graphene quantum dots (GQDs) with several different concentrations by adding together GQD and PVDF on PET substrate. These devices then have been obtained by spin coating method which able to convert small mechanically wise deformation into electric energy. Even with limited area of active element surfaces, output voltage (VRMS) and peak voltage (VPP) of the device show 125.87 mV and 1.29 V, respectively. Furthermore, the different concentration of active element with and without GQDs and also different concentration of BaTiO3 affected the output performance of flexible piezoelectric nanogenerator. This result expands the possibility of self-powered energy systems for electronics, sensors and energy harvesting leads to prodigious future prospect in electronic sector's development.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132648513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MetalMUMPs resonator for acetone vapor sensing 用于丙酮蒸汽传感的MetalMUMPs谐振器
2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2017-08-01 DOI: 10.1109/RSM.2017.8069109
Almur A. S. Rabih, M. Khir, A. Ahmed, M. U. Mian, J. Dennis, M. Ahmed, Al-Amin Idris Abdulgadir
{"title":"MetalMUMPs resonator for acetone vapor sensing","authors":"Almur A. S. Rabih, M. Khir, A. Ahmed, M. U. Mian, J. Dennis, M. Ahmed, Al-Amin Idris Abdulgadir","doi":"10.1109/RSM.2017.8069109","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069109","url":null,"abstract":"Acetone vapor monitoring is essential in workplace for human health and safety, where exposure to acetone concentration more than 176 parts per million (ppm) can cause damage to eyes, liver, kidneys and central nervous system. In addition, acetone in exhaled breath is known to be good biomarker for non-invasive screening of diabetes. The most common used acetone vapor sensors are based on metal oxide semiconductor sensors, which work at higher temperatures, and hence consume more power. This paper reports MetalMUMPs device for acetone vapor sensing for environmental monitoring. The device is based on electrothermal actuation and capacitive sensing using differential capacitance measurement technique. MS3110 universal capacitive readout circuit was used to readout the small change of the static capacitance when the device is actuated using 0.71 Vrms with a driving frequency range of 0.5 kHz–8 kHz. The output signal of the circuit is given as a voltage and it can be directly related to the capacitance change. The output voltage change was found to increase linearly with increasing the acetone vapor concentration from 100 ppm to 500 ppm with a concentration sensitivity of 0.65 mV/ppm.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126141092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
DC magnetron sputtered TiO2 thin film as efficient hole blocking layer for perovskite solar cell 直流磁控溅射TiO2薄膜作为钙钛矿太阳能电池的高效空穴阻挡层
2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2017-08-01 DOI: 10.1109/RSM.2017.8069148
M. S. M. Saheed, N. M. Mohamed, B. Singh, V. Perumal, M. S. M. Saheed
{"title":"DC magnetron sputtered TiO2 thin film as efficient hole blocking layer for perovskite solar cell","authors":"M. S. M. Saheed, N. M. Mohamed, B. Singh, V. Perumal, M. S. M. Saheed","doi":"10.1109/RSM.2017.8069148","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069148","url":null,"abstract":"The ultra-thin film of metal oxide were fabricated via DC-magnetron sputtering to acts as the hole blocking layer. The traditional dye absorption material were replaced by the fourth generation light harvesting material, the CH<inf>3</inf>NH<inf>3</inf>PbI<inf>3</inf> which deemed to reach the PV efficiency limit. The complete conversion of PbI<inf>2</inf> into CH<inf>3</inf>NH<inf>3</inf>PbI<inf>3</inf> crystal structure vital in lowering the internal series resistance. With this new light harvesting material were used able to achieve 7.75% efficiency via sequential two step deposition of perovskite.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122792672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Characterization of difference carbon nanotubes (CNTs) as a sensing mechanism for development of formaldehyde gas detection sensor 差异碳纳米管(CNTs)作为一种传感机制的表征及其对甲醛气体检测传感器的开发
2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2017-08-01 DOI: 10.1109/RSM.2017.8069129
M. Zaki, M. Nasir, U. Hashim, M. Arshad
{"title":"Characterization of difference carbon nanotubes (CNTs) as a sensing mechanism for development of formaldehyde gas detection sensor","authors":"M. Zaki, M. Nasir, U. Hashim, M. Arshad","doi":"10.1109/RSM.2017.8069129","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069129","url":null,"abstract":"This paper are focused to characterize the difference CNTs deposit on Titanium Oxide (TiO2) as metal sensing for formaldehyde molecule detection. The sensor was fabricated by using two types of CNTs which is Single wall carbon nanotube (SWCNT) and Multi wall carbon nanotube (MWCNT) for measuring the most suitable device for detecting the formaldehyde gas. Characterization of difference IDE pattern is demonstrated by various measurements.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128238243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Temperature compensation of ISFET based pH sensor using artificial neural networks 基于ISFET的pH传感器温度补偿的人工神经网络
2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2017-08-01 DOI: 10.1109/RSM.2017.8069141
Rishabh Bhardwaj, Sagnik Majumder, P. Ajmera, S. Sinha, Rishi Sharma, R. Mukhiya, Pratik Narang
{"title":"Temperature compensation of ISFET based pH sensor using artificial neural networks","authors":"Rishabh Bhardwaj, Sagnik Majumder, P. Ajmera, S. Sinha, Rishi Sharma, R. Mukhiya, Pratik Narang","doi":"10.1109/RSM.2017.8069141","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069141","url":null,"abstract":"This paper presents a new Machine Learning based temperature compensation technique for Ion-Sensitive Field-Effect Transistor (ISFET). The circuit models for various electronic devices like MOSFET are available in commercial Technology Computer Aided Design (TCAD) tools such as LT-SPICE but no built-in model exists for ISFET. Considering SiO2 as the sensing film, an ISFET circuit model was created in LT-SPICE and simulations were carried out to obtain characteristic curves for SiO2 based ISFET. A Machine Learning (ML) model was trained using the data collected from the simulations performed using the ISFET macromodel in the read-out circuitry. The simulations were performed at various temperatures and the temperature drift behavior of ISFET was fed into the ML model. Constant pH (predicted by the system) curves were obtained when the device is tested for various pH (7 and 10) solutions at different ambient temperatures.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133803707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Transfer characteristics of graphene based field effect transistor (GFET) for biosensing application 用于生物传感的石墨烯基场效应晶体管(GFET)的传输特性
2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2017-08-01 DOI: 10.1109/RSM.2017.8069127
Reena Sri Selvarajan, A. A. Hamzah, B. Majlis
{"title":"Transfer characteristics of graphene based field effect transistor (GFET) for biosensing application","authors":"Reena Sri Selvarajan, A. A. Hamzah, B. Majlis","doi":"10.1109/RSM.2017.8069127","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069127","url":null,"abstract":"The unique monoatomic structure of graphene makes it as an enticing material to be used in sensitive detection of analytes in biosensing applications. Implementation of graphene as a conducting channel in graphene based field effect transistor (GFET) allows ultrasensitive detection of analytes in a targeted sample. Herein, we have investigated the transfer characteristics of GFET for biosensing applications. GFET was modelled and simulated using Lumerical DEVICE charge transport solver (DEVICE CT). The device shows ambipolar curve and achieved minimum conductivity of 0.00012 A at Dirac point. However, the Dirac point shifts to the right and introduces significant change in the minimum conductivity as drain voltage bias is increased. This shows that external factors such as doping can influence the surface charges of the GFET and this property of graphene is crucial in ultrasensitive detection of analytes in biosensing applications.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"135 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129475354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Grounded and floating impedance simulators employing a new active element 采用新型有源元件的接地和浮动阻抗模拟器
2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2017-08-01 DOI: 10.1109/RSM.2017.8069112
J. Sampe, Mohammad Faseehuddin, B. Majlis, S. Ali, Z. Yusoff
{"title":"Grounded and floating impedance simulators employing a new active element","authors":"J. Sampe, Mohammad Faseehuddin, B. Majlis, S. Ali, Z. Yusoff","doi":"10.1109/RSM.2017.8069112","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069112","url":null,"abstract":"In this paper a newly proposed active element namely Dual X current conveyor differential input transconductance amplifier (DXCCDITA) is used in designing two grounded inductance (GI) simulators and a generalized immittance simulator topology which can realize floating inductor (FI), floating capacitor (FC) and floating resistor (FR) based on passive elements selected. All the designed simulators require only a single active element and minimum number of passive components one/two for implementation. The proposed simulators enjoy tunability property. None of the proposed simulators require passive component matching conditions for realization. To demonstrate the workability of the simulators they are used in design of a current mode (CM) low pass filter circuit and second order voltage mode (VM) band pass filter. The simulations are performed using 0.35μm TSMC CMOS technology parameters in Hspice program.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131349167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
One step precipitation of CaCO3 nanoparticles assisted by drying and hydrothermal method 干燥水热法辅助一步沉淀法制备CaCO3纳米颗粒
2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2017-08-01 DOI: 10.1109/RSM.2017.8069134
N. H. Sulimai, R. A. Rani, Z. Khusaimi, S. Abdullah, M. J. Salifairus, M. Rusop, S. Alrokayan, H. Khan
{"title":"One step precipitation of CaCO3 nanoparticles assisted by drying and hydrothermal method","authors":"N. H. Sulimai, R. A. Rani, Z. Khusaimi, S. Abdullah, M. J. Salifairus, M. Rusop, S. Alrokayan, H. Khan","doi":"10.1109/RSM.2017.8069134","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069134","url":null,"abstract":"Calcium Carbonate (CaCO3) is one of the most abundant natural resource exists. Precipitation is the most famous bottom up approach to synthesize CaCO3. This work explained preparation of (CaCO3) by unfiltered precipitation method and further dried by different methods. Different drying methods were executed post-precipitation step; normal drying and hydrothermal. Precipitated CaCO3 dried by normal drying managed to eliminate all Nitrogen (N) whereas drying by hydrothermal method still has traces of N left. The polymorphs of the synthesized CaCO3 are mostly calcite with traces of vaterite present. Normal drying method produced smaller CaCO3 crystallite size of 64.9nm compared to hydrothermal drying method synthesized CaCO3 with crystallite size 93.2nm. Annealing temperature is inversely proportional to the crystallite size of the treated CaCO3. Smallest crystallite size of synthesized CaCO3 is 25.5nm dried by normal drying method at 500°C. To the best of our knowledge, this is the first report of unfiltered precipitation and also the first to report on polymorph and crystallite size of CaCO3 synthesized by different drying methods.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129292445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Synthesis and enhanced photocatalytic property of CuO nanostructure via dip coating method 浸涂法制备CuO纳米结构及其增强光催化性能
2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2017-08-01 DOI: 10.1109/RSM.2017.8069120
A. Zoolfakar, Nur Munirah Megat Abu Bazar, N. S. Khairir, Y. Husaini, M. H. A. Talip, M. H. Mamat, R. A. Rani, M. Rusop
{"title":"Synthesis and enhanced photocatalytic property of CuO nanostructure via dip coating method","authors":"A. Zoolfakar, Nur Munirah Megat Abu Bazar, N. S. Khairir, Y. Husaini, M. H. A. Talip, M. H. Mamat, R. A. Rani, M. Rusop","doi":"10.1109/RSM.2017.8069120","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069120","url":null,"abstract":"There are variety of technique that being used for water treatment but photocatalytic activity is one of the most efficient and low cost method. In this paper, photocatalytic properties of nanostructures cupric oxide (CuO) has been investigated. CuO has a norrow bandgap energy of 1.2 eV. The nanostructures CuO were synthesized via dip coating method and characterized by field emission scanning electron microscopy (FESEM) to observed the surface morphology of the films. Photocatalytic experiments was carried out on sample of 60 cycles with 200 °C, 300 °C and 400 °C of annealing temperature due to their highest density and homogenous distributed on the substrate. Every sample have been exposed to solar simulator for 2.5 hours. Photocatalytic property was examined using ultraviolet-vis (UV-vis) spectrophotometer. The results showed that higher annealing temperature as well as longer exposured duration to the solar simulator exhibits enhanced photocatalytic performance.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126729687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Development of wearable patch antenna for medical application 医用可穿戴贴片天线的研制
2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2017-08-01 DOI: 10.1109/RSM.2017.8069166
A. Za'aba, S. Ibrahim, N. A. Malek, Athirah Mohd Ramly
{"title":"Development of wearable patch antenna for medical application","authors":"A. Za'aba, S. Ibrahim, N. A. Malek, Athirah Mohd Ramly","doi":"10.1109/RSM.2017.8069166","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069166","url":null,"abstract":"This paper presents the development of a flexible antenna made of Polydimethylsiloxane (PDMS) and Copper (Cu) patch. The antenna comprises of Cu tape as the patch and ground plane, PDMS composite as the substrate and SMA connector as the coaxial feed with dimensions of 21.5mm patch radius, 60×60×3 mm3 substrate area and 60×60 mm2 ground plane area. In this study, we also create a PDMS+glass microsphere composite as substitute to the PDMS substrate. The PDMS+glass inclusion reduces PDMS's relative permittivity and loss tangent to 1.9 and 0.014 respectively which could enhance antenna's performance. To overcome adhesiveness issue between Cu patch and PDMS substrate, the antenna was encapsulated with another thin layer of PDMS/PDMS+glass substrate of 0.6mm thickness to ensure a constant distance from the ground plane. CST software was used to simulate antenna resonance frequency prior to the fabrication. Measurements using a Vector Network Analyzer (VNA) showed that the PDMS substrate antennas resonated at 1.92 GHz (without encapsulation) and 2.34 GHz (with encapsulation) while the PDMS+glass substrate antennas resonated at 2.46 GHz (without encapsulation) and 2.25 GHz (with encapsulation) respectively. Here, we also discussed the effect of substrate on return loss. Overall, results obtained from the measurements are in agreement with the simulation results.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121358612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
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