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2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)最新文献

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Parameter design of microstrip patch antenna operating at dual microwave-band for RF energy harvester application 射频能量采集器双微波波段微带贴片天线参数设计
2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2017-08-01 DOI: 10.1109/RSM.2017.8069128
N. M. Yunus, J. Sampe, J. Yunas, A. Pawi
{"title":"Parameter design of microstrip patch antenna operating at dual microwave-band for RF energy harvester application","authors":"N. M. Yunus, J. Sampe, J. Yunas, A. Pawi","doi":"10.1109/RSM.2017.8069128","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069128","url":null,"abstract":"The growth innovation and versatility in wireless energy harvester have attracted an attention on the development of antennas. This paper presents microstrip patch antenna design of a dual-band radio frequency (RF) energy harvester system for self-powered devices. The antenna is designed using a slot-coupled structure to realize for dual microwave bands operation. By using an optimization parameter of 50Ω feed point on microstrip line, the proposed patch antenna has achieved good impedance matching. Parameter design of the feed point with the optimal extension length, ΔL improves the performance at targeted resonating frequencies. COMSOL Multiphysics 5.1 electromagnetic package is utilized for the simulation and analysis process. The proposed antenna provides good performance parameter in terms of radiation pattern and return loss. The simulated results indicate satisfactory return loss performance of −31.867 dB and −24.437 dB in the dual narrowband resonance frequencies at 1.9GHz and 2.45GHz respectively. This property of results can be employed in rectifier of RF energy harvester system.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125324328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Fabrication and characterization of titanium dioxide through different depositions method for detection of formaldehyde gas 二氧化钛的制备及表征通过不同沉积方法检测甲醛气体
2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2017-08-01 DOI: 10.1109/RSM.2017.8069132
M. Zaki, M. Nasir, Uda Hashim, M. Arshad
{"title":"Fabrication and characterization of titanium dioxide through different depositions method for detection of formaldehyde gas","authors":"M. Zaki, M. Nasir, Uda Hashim, M. Arshad","doi":"10.1109/RSM.2017.8069132","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069132","url":null,"abstract":"This paper was studies about the effect of difference fabrication of TiO2 nanoparticle sensor on surface morphological structure and electrical properties for detection of formaldehyde. Two type of deposition method are used to deposit TiO2 nanoparticle layer on IDE/Si/SiO2 substrate. The fabrication of IDE was done by using conventional photolithography process. In the second method, the solution TiO2 was directly deposited by using e-beam evaporator. The fabricated of sensor was further validated through characterization on morphological surface inspection and electrical properties of the device. The roughness of TiO2 film was demonstrated that the latter method is preferable due surface uniformity approximately 70 nm in grain size to provide resistance barrier to allow current flow when interface with the formaldehyde. The result was demonstrated by various measurement.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114666064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A K-band switched-line phase shifter using novel low-voltage low-loss RF-MEMS switch 一种采用新型低压低损耗RF-MEMS开关的k波段开关线移相器
2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2017-08-01 DOI: 10.1109/RSM.2017.8069125
Li-Ya Ma, N. Soin, A. Nordin
{"title":"A K-band switched-line phase shifter using novel low-voltage low-loss RF-MEMS switch","authors":"Li-Ya Ma, N. Soin, A. Nordin","doi":"10.1109/RSM.2017.8069125","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069125","url":null,"abstract":"A low-voltage low-loss K-band 3-bit MEMS switched-line phase shifter is presented in this work. The phase shifter is constructed by novel shunt capacitive RF-MEMS switches and coplanar waveguide lines on a high-resistivity silicon substrate. A low-voltage RF-MEMS switch (pull-in voltage = 3.04V) is employed and exhibits good RF characteristics by using T-match technique where its insertion loss and isolation is −0.1291dB and −28.75dB, respectively at frequency of 20GHz. The 3-bit MEMS phase shifter is assembled by three single-bit units (namely, 45°-bit, 90°-bit and 180°-bit) of switched-line structures; the average phase error and average insertion loss is 0.2445° and −2.447dB, respectively, at 20GHz; its return loss is better than 10dB at a wideband frequency range of up to 20GHz. The whole design area is 6mm∗4mm.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123990391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
New CFOA-based low frequency filters for biomedical and seismic applications 用于生物医学和地震应用的新型基于cfoa的低频滤波器
2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2017-08-01 DOI: 10.1109/RSM.2017.8069114
M. Abuelma'atti, Zainualbideen Jamal Khalifa, S. Dhar
{"title":"New CFOA-based low frequency filters for biomedical and seismic applications","authors":"M. Abuelma'atti, Zainualbideen Jamal Khalifa, S. Dhar","doi":"10.1109/RSM.2017.8069114","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069114","url":null,"abstract":"This paper presents new low frequency filters. The proposed filters are built around a floating active inductor (FAI), a capacitance multiplier and/or a resistance multiplier. The proposed FAI, capacitance (resistance) multipliers uses two current feedback operational amplifiers (CFOAs) and five passive components and can realize relatively large values of inductances, capacitances and resistances that cannot be fabricated on chips. Experimental and simulation results that confirm the functionality of the proposed circuits are obtained using the commercially available CFOA AD844. The proposed filters would be useful for very low frequency applications such as biomedical devices used in the electrocardiogram (ECG), the electroencephalograph (EEG) measurements and the pacemaker detector as well as in seismic measurements.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124800689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Impact of strain on electrical performance of Silicon Nanowire MOSFET 应变对硅纳米线MOSFET电性能的影响
2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2017-08-01 DOI: 10.1109/RSM.2017.8069117
F. Hamid, A. Hamzah, A. Mohamad, R. Ismail, M. Razali
{"title":"Impact of strain on electrical performance of Silicon Nanowire MOSFET","authors":"F. Hamid, A. Hamzah, A. Mohamad, R. Ismail, M. Razali","doi":"10.1109/RSM.2017.8069117","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069117","url":null,"abstract":"A 3-Dimensional (3D) strained Silicon Nanowire MOSFET simulation and inversion charge model are presented. The simulation studies are conducted based on electrical parameters of nanowires such as current and threshold voltage using a ATLAS TCAD simulator. The inversion charge model with Germanium fraction is formulated using a unified charge model. These characterization studies are performed to investigate the performance of Silicon Nanowire based on the strain effect. The simulation and modeling works have been compared with numerical simulations. Findings have shown that the strained Silicon Nanowire performs better compared to the unstrained Silicon Nanowire MOSFET, where the on-state current increased, threshold voltage shifted by 0.2 V and inversion charge density improved by 30%.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127188401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A study of different extraction techniques of nanocrystalline graphite (NCG)/p-type silicon schottky diode parameters 纳米晶石墨/p型硅肖特基二极管参数的不同提取工艺研究
2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2017-08-01 DOI: 10.1109/RSM.2017.8069156
A. A. Nawawi, S. M. Sultan, S. Rahman, S. H. Pu, J. McBride, L. H. Wah
{"title":"A study of different extraction techniques of nanocrystalline graphite (NCG)/p-type silicon schottky diode parameters","authors":"A. A. Nawawi, S. M. Sultan, S. Rahman, S. H. Pu, J. McBride, L. H. Wah","doi":"10.1109/RSM.2017.8069156","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069156","url":null,"abstract":"This article demonstrates the investigation of the Schottky barrier height and ideality factor extraction techniques of a Nano Crystalline Graphite (NCG)/p-type silicon Schottky barrier diode based on current-voltage characteristics. A series resistance of 12.5 kΩ was obtained from the linear slope of the I-V plot. By taking into account of the series resistance, different techniques of graphical fitting methods were explored. In this experiment, the Schottky barrier height (SBH) was found to be lower than found in the literature for graphene/Si Schottky diode and will be discussed in detail. However, the ideality factor of 1.1 was achieved using a reverse bias I-V plot. This shows NCG/p-Si Schottky diode followed thermionic emission mechanism.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126850649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Simulation on mechanical properties of porous nanocrystalline silicon membrane for artificial kidney 人工肾用多孔纳米晶硅膜力学性能模拟
2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2017-08-01 DOI: 10.1109/RSM.2017.8069135
Muhammad Fahmi bin Jaafar, R. Latif, B. Majlis
{"title":"Simulation on mechanical properties of porous nanocrystalline silicon membrane for artificial kidney","authors":"Muhammad Fahmi bin Jaafar, R. Latif, B. Majlis","doi":"10.1109/RSM.2017.8069135","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069135","url":null,"abstract":"A simulation analysis of a porous nanocrystalline silicon membrane (pnc-Si) is conducted to investigate the mechanical properties of the membrane in an assumed environment of an artificial kidney, with an applied pressure ranging from 10–500 mmHg. The simulation was done using COMSOL Multiphysics 5.1 under stationary study with the membrane having a variation of surface area. From simulation, the von Mises stress shows a lower value than the yield strength for an applied pressure of 100 mmHg, which shows that the pnc-Si membrane may be able to withstand high pressure.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126470807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Solar battery charger using a multi-stage converter 太阳能电池充电器采用多级转换器
2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2017-08-01 DOI: 10.1109/RSM.2017.8069171
Thanyanut Lueangamornsiri, W. Wichakool, K. Chalermyanont
{"title":"Solar battery charger using a multi-stage converter","authors":"Thanyanut Lueangamornsiri, W. Wichakool, K. Chalermyanont","doi":"10.1109/RSM.2017.8069171","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069171","url":null,"abstract":"This paper demonstrates a multi-stage DC-DC converter to charge a battery with a three stage charging steps and can simultaneously perform the maximum power point tracking (MPPT). The system uses an auxiliary battery together with an bidirectional DC-DC converter to balance the power flow to complement the input solar power and the required power by the primary battery. The hardware prototypes shows the system functionality under all three charging stages.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130829421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
An amplitude independent muscle activity detection algorithm based on adaptive zero crossing technique and mean instantaneous frequency of the sEMG signal 一种基于自适应过零技术和表面肌电信号平均瞬时频率的振幅无关肌肉活动检测算法
2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2017-08-01 DOI: 10.1109/RSM.2017.8069133
Husamuldeen K. Hameed, W. Hasan, S. Shafie, S. A. Ahmad, H. Jaafar
{"title":"An amplitude independent muscle activity detection algorithm based on adaptive zero crossing technique and mean instantaneous frequency of the sEMG signal","authors":"Husamuldeen K. Hameed, W. Hasan, S. Shafie, S. A. Ahmad, H. Jaafar","doi":"10.1109/RSM.2017.8069133","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069133","url":null,"abstract":"In order to enhance the efficacy of the prosthetic and orthotic robotic devices controlled by surface electromyography (sEMG) signals, muscle activity detection algorithms need to be independent of the amplitude variation in the sEMG signal to make these devices more feasible and reliable for the disabled people. A new algorithm has been developed to detect the presence of muscle activities in weak and noisy sEMG signals. The algorithm does not employ any amplitude features in the detection process and employs only frequency features of the sEMG signal; therefore it is amplitude independent and can detect muscle activities in signals that have low signal to noise ratio. A new zero crossing technique has been developed as a new frequency feature called the Adaptive Zero Crossing (AZC) which is used to minimize false alarms and enhances the detection process. This new feature in addition to the mean of the Mean Instantaneous Frequency (MMIF) of the signal is used to detect the presence of the muscle activities in the sEMG signals.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132532849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Numerical simulation of thick metal passivation stress, Part I: Identification of stress source 厚金属钝化应力的数值模拟，第一部分:应力源的识别
2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2017-08-01 DOI: 10.1109/RSM.2017.8069137
R. Sethu, David Kho, S. Kulkarni, H. U. Ha, K. Soon
{"title":"Numerical simulation of thick metal passivation stress, Part I: Identification of stress source","authors":"R. Sethu, David Kho, S. Kulkarni, H. U. Ha, K. Soon","doi":"10.1109/RSM.2017.8069137","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069137","url":null,"abstract":"Standard design passivation layers on thick (> 3000 nm) top metalization has a susceptibility for cracking due to thermal stress. In this two part series of papers, Finite Element Analysis (FEA) simulation with Comsol Multiphysics was used to understand the impact of thermal stress. In Part I (this paper), three different thermal stress conditions were investigated i.e. cool down after Chemical Vapor Deposition (CVD), the increase, and the decrease in temperature during temperature cycling. The highest stress was realized during the increase in temperature during temperature cycling. This was due to the L shaped spatial profile of the passivation design which resulted in an increased Stress Intensity Factor (SIF), more than the temperature difference between the temperature levels seen in CVD.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132543730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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