基于ISFET的pH传感器温度补偿的人工神经网络

Rishabh Bhardwaj, Sagnik Majumder, P. Ajmera, S. Sinha, Rishi Sharma, R. Mukhiya, Pratik Narang
{"title":"基于ISFET的pH传感器温度补偿的人工神经网络","authors":"Rishabh Bhardwaj, Sagnik Majumder, P. Ajmera, S. Sinha, Rishi Sharma, R. Mukhiya, Pratik Narang","doi":"10.1109/RSM.2017.8069141","DOIUrl":null,"url":null,"abstract":"This paper presents a new Machine Learning based temperature compensation technique for Ion-Sensitive Field-Effect Transistor (ISFET). The circuit models for various electronic devices like MOSFET are available in commercial Technology Computer Aided Design (TCAD) tools such as LT-SPICE but no built-in model exists for ISFET. Considering SiO2 as the sensing film, an ISFET circuit model was created in LT-SPICE and simulations were carried out to obtain characteristic curves for SiO2 based ISFET. A Machine Learning (ML) model was trained using the data collected from the simulations performed using the ISFET macromodel in the read-out circuitry. The simulations were performed at various temperatures and the temperature drift behavior of ISFET was fed into the ML model. Constant pH (predicted by the system) curves were obtained when the device is tested for various pH (7 and 10) solutions at different ambient temperatures.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"Temperature compensation of ISFET based pH sensor using artificial neural networks\",\"authors\":\"Rishabh Bhardwaj, Sagnik Majumder, P. Ajmera, S. Sinha, Rishi Sharma, R. Mukhiya, Pratik Narang\",\"doi\":\"10.1109/RSM.2017.8069141\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a new Machine Learning based temperature compensation technique for Ion-Sensitive Field-Effect Transistor (ISFET). The circuit models for various electronic devices like MOSFET are available in commercial Technology Computer Aided Design (TCAD) tools such as LT-SPICE but no built-in model exists for ISFET. Considering SiO2 as the sensing film, an ISFET circuit model was created in LT-SPICE and simulations were carried out to obtain characteristic curves for SiO2 based ISFET. A Machine Learning (ML) model was trained using the data collected from the simulations performed using the ISFET macromodel in the read-out circuitry. The simulations were performed at various temperatures and the temperature drift behavior of ISFET was fed into the ML model. Constant pH (predicted by the system) curves were obtained when the device is tested for various pH (7 and 10) solutions at different ambient temperatures.\",\"PeriodicalId\":215909,\"journal\":{\"name\":\"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"17\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RSM.2017.8069141\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RSM.2017.8069141","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 17

摘要

提出了一种新的基于机器学习的离子敏感场效应晶体管(ISFET)温度补偿技术。各种电子器件(如MOSFET)的电路模型可在商业技术计算机辅助设计(TCAD)工具(如LT-SPICE)中获得,但没有ISFET的内置模型。以SiO2为传感膜,在LT-SPICE中建立了ISFET电路模型,并进行了仿真,得到了基于SiO2的ISFET的特性曲线。使用读出电路中使用ISFET宏模型进行的模拟收集的数据来训练机器学习(ML)模型。在不同温度下进行模拟,并将ISFET的温度漂移行为输入到ML模型中。在不同的环境温度下对该装置进行各种pH(7和10)溶液的测试,得到恒定的pH(由系统预测)曲线。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Temperature compensation of ISFET based pH sensor using artificial neural networks
This paper presents a new Machine Learning based temperature compensation technique for Ion-Sensitive Field-Effect Transistor (ISFET). The circuit models for various electronic devices like MOSFET are available in commercial Technology Computer Aided Design (TCAD) tools such as LT-SPICE but no built-in model exists for ISFET. Considering SiO2 as the sensing film, an ISFET circuit model was created in LT-SPICE and simulations were carried out to obtain characteristic curves for SiO2 based ISFET. A Machine Learning (ML) model was trained using the data collected from the simulations performed using the ISFET macromodel in the read-out circuitry. The simulations were performed at various temperatures and the temperature drift behavior of ISFET was fed into the ML model. Constant pH (predicted by the system) curves were obtained when the device is tested for various pH (7 and 10) solutions at different ambient temperatures.
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