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2007 IEEE/MTT-S International Microwave Symposium最新文献

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Design of a Bandpass Transversal Filter Employing a Novel Hybrid Waveguide-Printed Structure 采用新型波导-印刷混合结构的带通横向滤波器设计
2007 IEEE/MTT-S International Microwave Symposium Pub Date : 2007-06-03 DOI: 10.1109/MWSYM.2007.380427
M. Martinez-Mendoza, J. S. Gómez-Díaz, D. Cañete-Rebenaque, J. Gómez-Tornero, Alejandro Álvarez Melcón
{"title":"Design of a Bandpass Transversal Filter Employing a Novel Hybrid Waveguide-Printed Structure","authors":"M. Martinez-Mendoza, J. S. Gómez-Díaz, D. Cañete-Rebenaque, J. Gómez-Tornero, Alejandro Álvarez Melcón","doi":"10.1109/MWSYM.2007.380427","DOIUrl":"https://doi.org/10.1109/MWSYM.2007.380427","url":null,"abstract":"This paper introduces a novel hybrid structure to implement a bandpass transversal filter based on the combination of two well known technologies. The structure combines for the first time the waveguide and the microstrip technologies for the design of transversal filters with maximum selectivity. By combining these technologies, very compact structures are obtained to implement the so called modified doublet. One of the resonators of the doublet is formed with the TM111 mode of a waveguide cavity, while the second resonator is implemented using a standard printed line microstrip resonator. It is shown that all the parameters of the N + 2 coupling matrix can be controlled by means of the dimensions of the proposed structure. Results validate the novel structure, and show how a second order filtering function of a specific coupling matrix can be easily synthesized.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"235 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121893415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Low Power OOK Transmitter for Wireless Capsule Endoscope 用于无线胶囊内窥镜的低功耗OOK发射器
2007 IEEE/MTT-S International Microwave Symposium Pub Date : 2007-06-03 DOI: 10.1109/MWSYM.2007.380113
Jiho Ryu, Minchul Kim, Jaechun Lee, Byung-sung Kim, Moon‐Que Lee, S. Nam
{"title":"Low Power OOK Transmitter for Wireless Capsule Endoscope","authors":"Jiho Ryu, Minchul Kim, Jaechun Lee, Byung-sung Kim, Moon‐Que Lee, S. Nam","doi":"10.1109/MWSYM.2007.380113","DOIUrl":"https://doi.org/10.1109/MWSYM.2007.380113","url":null,"abstract":"A new structure of on-off keying(OOK) transmitter with low power consumption and high data rate is proposed using a current-reused CMOS differential LC-VCO for wireless capsule endoscope application. The carrier frequency (440 MHz) of the transmitter is determined as the minimum loss frequency point considering the antenna loss and the loss property of human body, etc. The transmitter is able to output 0 dBm of power at the single-ended output to a monopole 50-Ohm antenna to meet the demands of high-data rate speed (40 Mb/s) and short range (15-cm) wireless communication. This transmitter, has been fabricated using 0.18-mum CMOS technology, consumes only 860-muA of current from a 3 V supply.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117181385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 39
Spline-Based Model for Digital Predistortion of Wide-Band Signals for High Power Amplifier Linearization 基于样条的高功率放大器线性化宽带信号数字预失真模型
2007 IEEE/MTT-S International Microwave Symposium Pub Date : 2007-06-03 DOI: 10.1109/MWSYM.2007.380504
N. Safari, P. Fedorenko, J. Kenney, T. Roste
{"title":"Spline-Based Model for Digital Predistortion of Wide-Band Signals for High Power Amplifier Linearization","authors":"N. Safari, P. Fedorenko, J. Kenney, T. Roste","doi":"10.1109/MWSYM.2007.380504","DOIUrl":"https://doi.org/10.1109/MWSYM.2007.380504","url":null,"abstract":"Different linearization techniques have been proposed to linearize Power Amplifiers (PAs) and improve the PA efficiency for non-constant envelope modulation schemes. Among all the linearization techniques, Digital Predistortion (DPD) is one of the most cost effective. For wider bandwidth applications, PA memory effects can no longer be ignored. Therefore in order to achieve a higher linearization performance, the Predistorter (PD) requires to compensate for memory nonlinearities. In this paper a new PD model based on piecewise polynomial approximation in the form of splines is described and compared with memory polynomial PD. The purpose of the spline PD is to increase the approximation accuracy and/or reduce the complexity. Simulation results with 16 Quadrature Amplitude Modulation (QAM) show a significant improvement in Adjacent Channel Power Ratio (ACPR) for a Wiener-Hammerstein power amplifier model. A set-up to perform the measurements on a 100 watt High Power Amplifier (HPA) is also developed. The experiments are carried out on both an uplink WCDMA and a crest-reduced two-carrier WCDMA signal. The results show that a higher linearization performance is obtained by using spline basis functions as compared to conventional memory polynomial PD.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117213047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 31
Hot-Switching Test of Non-Contact Type MEMS Switch 非接触式MEMS开关热开关测试
2007 IEEE/MTT-S International Microwave Symposium Pub Date : 2007-06-03 DOI: 10.1109/MWSYM.2007.380100
Eun Sub Shim, Jaehong Park, W. Choi, Youngmin Kim, Y. Kwon, Jong Seon No, S. Nam, Donghee Cho
{"title":"Hot-Switching Test of Non-Contact Type MEMS Switch","authors":"Eun Sub Shim, Jaehong Park, W. Choi, Youngmin Kim, Y. Kwon, Jong Seon No, S. Nam, Donghee Cho","doi":"10.1109/MWSYM.2007.380100","DOIUrl":"https://doi.org/10.1109/MWSYM.2007.380100","url":null,"abstract":"This paper presents the performance and power handling properties of a capacitive MEMS switch. The switch is a completely non-contact-type switch built with several capacitors that contain air gaps, and free from contact failures that frequently occur in contact-type switches. The switch was designed for 24 GHz automotive radar applications, and the average RF performance of the fabricated switches includes insertion loss of 0.5 dB and isolation of 20 dB at 24 GHz. The lifetime, power-handling properties, and linearity are examined in a hot-switching mode. After 109 continuous cycles in a hot-switching mode with 18 mW RF input power, mechanical failures or RF performance degradation were not detected. Power handling capacity of 0.9 W under hot-switching condition was achieved.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124477570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Design for Integration of RF Power Transistors in 0.13 μm Advanced CMOS Technology 基于0.13 μm先进CMOS技术的射频功率晶体管集成设计
2007 IEEE/MTT-S International Microwave Symposium Pub Date : 2007-06-03 DOI: 10.1109/MWSYM.2007.380417
Sheng-Yi Huang, Kun-Ming Chen, G. Huang, Chun-Yen Chang, C. Hung, V. Liang, Bo-Yuan Chen
{"title":"Design for Integration of RF Power Transistors in 0.13 μm Advanced CMOS Technology","authors":"Sheng-Yi Huang, Kun-Ming Chen, G. Huang, Chun-Yen Chang, C. Hung, V. Liang, Bo-Yuan Chen","doi":"10.1109/MWSYM.2007.380417","DOIUrl":"https://doi.org/10.1109/MWSYM.2007.380417","url":null,"abstract":"An RF power MOSFET was proposed and manufactured in a standard 0.13 μm CMOS technology. Without adding additional masks, cost and process, the breakdown voltage can be improved by using the N-well and shallow-trench-isolation processes to form a drift n- region. The breakdown voltage was 4.3 V at gate bias of 1.2 V. The cutoff frequency and maximum oscillation frequency were 68 GHz and 87 GHz, respectively. In addition, the power gain, output power and power-added efficiency were 16.8 dB, 15.9 dBm and 43.5%, respectively, at 2.4 GHz. Good RF linearity also addressed OIP3 of 28.6 dBm. The presented RF power transistor is cost effectively and can be applied into the power amplifier integration for RF SoC.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125907213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
DC and Large-Signal Microwave MOSFET Model Applicable to Partially-Depleted, Body-Contacted SOI Technology 适用于部分耗尽体接触SOI技术的直流和大信号微波MOSFET模型
2007 IEEE/MTT-S International Microwave Symposium Pub Date : 2007-06-03 DOI: 10.1109/MWSYM.2007.380558
D. R. Burke, M. El Kaamouchi, D. Vanhoenacker-Janvier, T. Brazil
{"title":"DC and Large-Signal Microwave MOSFET Model Applicable to Partially-Depleted, Body-Contacted SOI Technology","authors":"D. R. Burke, M. El Kaamouchi, D. Vanhoenacker-Janvier, T. Brazil","doi":"10.1109/MWSYM.2007.380558","DOIUrl":"https://doi.org/10.1109/MWSYM.2007.380558","url":null,"abstract":"A new compact DC and large-signal physics-based non-quasi-static (NQS) MOSFET model is proposed, suitable for partially-depleted body-tied silicon-on-insulator (SOI) MOSFETs. The developed four-terminal nonlinear model is comprised solely of fully-continuous explicit expressions that allow for quick simulation times and accurate intermodulation distortion analysis. Nonlinear depletion capacitances, as well as short-channel effects such as drain-induced barrier lowering, have been included, while the self-heating effects of SOI MOSFETs are modeled using a first-order thermal RC circuit. NQS distributed channel behaviour is accounted for by using a segmented channel model allowing the model in principle to operate up to high mm-wave frequencies. The model is verified for DC and large signal one-/multi-tone operation as well as through WCDMA measurements.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124808012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Piezoelectric MEMS Variable Capacitor for a UHF Band Tunable Built-in Antenna 用于超高频可调谐内置天线的压电MEMS可变电容
2007 IEEE/MTT-S International Microwave Symposium Pub Date : 2007-06-03 DOI: 10.1109/MWSYM.2007.380296
M. Nishigaki, T. Nagano, T. Miyazaki, T. Kawakubo, K. Itaya, M. Nishio, S. Sekine
{"title":"Piezoelectric MEMS Variable Capacitor for a UHF Band Tunable Built-in Antenna","authors":"M. Nishigaki, T. Nagano, T. Miyazaki, T. Kawakubo, K. Itaya, M. Nishio, S. Sekine","doi":"10.1109/MWSYM.2007.380296","DOIUrl":"https://doi.org/10.1109/MWSYM.2007.380296","url":null,"abstract":"A UHF band tunable built-in antenna is realized using piezoelectric MEMS variable capacitors. The variable capacitor, which is driven by a piezoelectric actuator, has a tuning ratio of 11 with control voltage ranging from 0 to 8 V and quality factor of more than 37 at 650 MHz. The built-in antenna, which is an inverted-F antenna, is mounted at the top of an upper PCB board of a clamshell mobile phone, and the antenna element has a meander shape for a built-in structure. In the tunable built-in antenna, the variable capacitor is connected to one point of the meander structure of the built-in antenna. The antenna covers a frequency from 510 to 800 MHz with an efficiency of more than -3.5 dB, or the relative bandwidth of 44% by changing the value of the variable capacitor.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129766571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Fully Embedded 2.4GHz LC-Balun into Organic Package Substrate with Series Resonant Tank Circuit 采用串联谐振槽电路将2.4GHz LC-Balun完全嵌入有机封装基板
2007 IEEE/MTT-S International Microwave Symposium Pub Date : 2007-06-03 DOI: 10.1109/MWSYM.2007.380144
J.C. Park, J.Y. Park, H.S. Lee
{"title":"Fully Embedded 2.4GHz LC-Balun into Organic Package Substrate with Series Resonant Tank Circuit","authors":"J.C. Park, J.Y. Park, H.S. Lee","doi":"10.1109/MWSYM.2007.380144","DOIUrl":"https://doi.org/10.1109/MWSYM.2007.380144","url":null,"abstract":"In this paper, fully embedded lattice type LC-balun into an organic package substrate has been designed, fabricated, and characterized for low cost and small size WLAN and Bluetooth applications. In order to improve the performance characteristics of the balun, two approaches are performed. First, LC series resonant tank is newly applied at the low pass filter circuit of the conventional lattice type LC balun circuit topology. Second, the quality factors of these inductors and capacitors are maximized by using vertically stacked circular geometry and BTO high DK film. The size of the fabricated balun is significantly reduced, an area of 2.7 mmtimes2.5 mmtimes0.66 mm (height). It has the insertion loss of -0.7 dB, return loss of 21 dB, phase imbalance of 5 degree, and frequency band width ranged from 2.35 GHz to 2.55 GHz. The fabricated balun is smallest and first fully embedded one into the organic package substrate. It is promising for various RF SOP products with multi functionalities, small size, and low cost.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129900109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
A Low Phase-Noise 9-GHz CMOS Quadrature-VCO using Novel Source-Follower Coupling Technique 基于新型源从动器耦合技术的低相位噪声9ghz CMOS正交压控振荡器
2007 IEEE/MTT-S International Microwave Symposium Pub Date : 2007-06-03 DOI: 10.1109/MWSYM.2007.380093
Hsien-Ku Chen, D. Chang, Y. Juang, Shey-Shi Lu
{"title":"A Low Phase-Noise 9-GHz CMOS Quadrature-VCO using Novel Source-Follower Coupling Technique","authors":"Hsien-Ku Chen, D. Chang, Y. Juang, Shey-Shi Lu","doi":"10.1109/MWSYM.2007.380093","DOIUrl":"https://doi.org/10.1109/MWSYM.2007.380093","url":null,"abstract":"A 9-GHz quadrature voltage-controlled oscillator (QVCO) with an improvement of 1/f noise performance due to the use of proposed source-follower coupling technique is presented. In contrast to conventional parallel or series coupling methods by which the coupling transistors are operated in saturation region, the source-follower coupling technique, which uses a coupling transistor operated in cut-off region, is invented. Therefore, 1/f noise is much lower than that of the conventional topologies due to the less turn-on duty cycle of the coupling-transistor than that of conventional one, which in turns results in smaller phase noise. It is found experimentally that the phase noise of the QVCO can be reduced by more than 8 dB due to the suppression the 1/f noise of coupling transistor by changing its operation condition from saturation to cut-off region. This QVCO achieves a phase noise of -115 dBc/Hz at 1-MHz-offset away from the 9.17 GHz carrier, corresponding to a figure-of-merit (FOM) of -183.4 dBc/Hz.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131049896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
A Bi-Directional Electronically Tunable CMOS Phase Shifter Using the High-Pass Topology 采用高通拓扑的双向电子可调谐CMOS移相器
2007 IEEE/MTT-S International Microwave Symposium Pub Date : 2007-06-03 DOI: 10.1109/MWSYM.2007.380356
M. Abdalla, K. Phang, G. Eleftheriades
{"title":"A Bi-Directional Electronically Tunable CMOS Phase Shifter Using the High-Pass Topology","authors":"M. Abdalla, K. Phang, G. Eleftheriades","doi":"10.1109/MWSYM.2007.380356","DOIUrl":"https://doi.org/10.1109/MWSYM.2007.380356","url":null,"abstract":"This paper presents an integrated phase shifter based on the high-pass L-C topology. The circuit utilizes both varactors and active inductors to extend the tuning range and achieve a low return loss. The high-pass topology results in a compact IC implementation, and allows phase compensation in series-fed antenna arrays utilizing this phase shifter. Furthermore, this approach allows integrating multiple stages on the same IC, without a significant size increase. A negative resistance is generated by the active inductor circuit, and is used to partially compensate the varactor losses. A test chip is fabricated in a standard 0.13 mum CMOS process, and a phase tuning range of 96deg is achieved at 4 GHz, with a return loss better than -18 dB across the entire tuning range. The phase shifter achieves a -2.2 dBm input compression point and a 7.4 dBm IIP3 while operating from a 1.5 V supply.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125676188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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