Design for Integration of RF Power Transistors in 0.13 μm Advanced CMOS Technology

Abstract

An RF power MOSFET was proposed and manufactured in a standard 0.13 μm CMOS technology. Without adding additional masks, cost and process, the breakdown voltage can be improved by using the N-well and shallow-trench-isolation processes to form a drift n- region. The breakdown voltage was 4.3 V at gate bias of 1.2 V. The cutoff frequency and maximum oscillation frequency were 68 GHz and 87 GHz, respectively. In addition, the power gain, output power and power-added efficiency were 16.8 dB, 15.9 dBm and 43.5%, respectively, at 2.4 GHz. Good RF linearity also addressed OIP3 of 28.6 dBm. The presented RF power transistor is cost effectively and can be applied into the power amplifier integration for RF SoC.