Advanced Lithography最新文献_第7页

Replication of 3D patterns from a grayscale resist master by nanoimprint process 用纳米压印技术复制灰度抗蚀剂母版的三维图案

Advanced Lithography Pub Date : 2023-05-01 DOI: 10.1117/12.2658384

Api Warsono, Diana-Stephany Fernandez Rodas, J. Reche, Anaïs De Lehelle D'Affroux, Sébastien Berard Bergery

{"title":"Replication of 3D patterns from a grayscale resist master by nanoimprint process","authors":"Api Warsono, Diana-Stephany Fernandez Rodas, J. Reche, Anaïs De Lehelle D'Affroux, Sébastien Berard Bergery","doi":"10.1117/12.2658384","DOIUrl":"https://doi.org/10.1117/12.2658384","url":null,"abstract":"First, Grayscale I-Line lithography process developed in CEA-Leti allows to manufacture a variety of 3D patterns based on the well-known photolithography technology. Grayscale photolithography is an innovative and alternative approach to create 3D patterns such as microlenses for example. Exposure of a low contrast resist at different doses results in different thicknesses in the resist film. The variation of the intrinsic dose is obtained by using a binary mask that has different chromium densities, thus modulating the exposure intensity on the resist surface1. Secondly, the NanoImprint Lithography (NIL) is a technology capable of reproducing a wide morphological range. NIL is increasingly requested for the reproduction of 3D patterns. Initially, standard NIL process uses a hard master usually composed of Si or SiO2. The proposed work validates the quality of the replication by the NanoImprint process of a \"resist master\" created by grayscale lithography. This approach facilitates the manufacturing process of a master by avoiding the etching step and offering a cost-effective solution. The measurement of several types of 3D patterns are performed before and after replication during this study. CD preservation is evaluated for 32 types of microlenses simultaneously replicated. Finally, the combination of the Grayscale and NanoImprint technologies allows to considerably increasing the printing possibilities. By freeing the difficulties of multiple patterns morphology conservation during the etching, the replication of a resist master permits other potential applications, particularly in the optical field.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132086530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Novel approach of patterning technologies enabling monolithic micro-optical components 新方法的图像化技术使单片微光学元件

Advanced Lithography Pub Date : 2023-05-01 DOI: 10.1117/12.2661529

J. Wolf, M. Ferstl, A. Voigt, S. Grützner, A. Schleunitz, G. Grützner

{"title":"Novel approach of patterning technologies enabling monolithic micro-optical components","authors":"J. Wolf, M. Ferstl, A. Voigt, S. Grützner, A. Schleunitz, G. Grützner","doi":"10.1117/12.2661529","DOIUrl":"https://doi.org/10.1117/12.2661529","url":null,"abstract":"We propose a novel approach of combined patterning technologies to manufacture individualized micro-optical components as required for the integration of system-level optical packaging, e.g. for coupling light into on-chip level waveguides. The presented work consists of an innovative combination of inkjet printing of available optical polymers onto a prepatterned substrate and UV-replication which enables the manufacturing processes for tailor-made polymeric hybrid and biconvex micro-optical components. For this, inkjet printing of the optical polymers InkOrmo or InkEpo is used as a dispensing technique for additive manufacturing. The ink is printed into designated cavities on a patterned substrate that shows either diffractive or refractive features. After UV-induced polymerization, the cured component is separated from the soft mold substrate. This results in a combination of either a diffractive and a refractive element or two convex refractive elements in one monolithic component. The refractive part on top is self-organized by the surface energy and the shape is adjusted with the amount of dispensed ink enabling to tune the refractive power of the lens. The diffractive structure or convex shape on the opposite side of the lens is obtained by replicating the shape of the prepatterned substrate. Such advanced micro-optic components allow in principle a higher degree of system integration and thus further system miniaturization by e.g. substituting a multi lens system with a single hybrid lens. This novel manufacturing concept is composed to cost-effectively implement design requirements, making tailor-made diffractive-refractive lenses easily accessible e.g. to the MEMS/MOEMS community.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132895337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Evaluation of TiN hardmask films to prevent line wiggling due to plasma-induced film stress 防止等离子体诱导薄膜应力引起的线摆动的TiN硬掩膜的评价

Advanced Lithography Pub Date : 2023-05-01 DOI: 10.1117/12.2661307

A. Turnquist, N. Kofuji, J. Sebastian, Z. Liu, H. Kou, H. Fukuda, Y. Tomczak, Y. Sun, D. Piumi, D. D. Roest

{"title":"Evaluation of TiN hardmask films to prevent line wiggling due to plasma-induced film stress","authors":"A. Turnquist, N. Kofuji, J. Sebastian, Z. Liu, H. Kou, H. Fukuda, Y. Tomczak, Y. Sun, D. Piumi, D. D. Roest","doi":"10.1117/12.2661307","DOIUrl":"https://doi.org/10.1117/12.2661307","url":null,"abstract":"The impact of both intrinsic and plasma-induced stress of a TiN hardmask on line wiggling was investigated via etching of p-SiOCH with 28 nm pitch, line and space (L/S) EUV resist patterning. Experimental stacks included crystalline PVD TiN with an intrinsic stress of +0.1 GPa and several PEALD TiN films with varying crystallinity and intrinsic stresses ranging from -3.6 GPa (compressive) to +0.2 GPa (tensile). Results confirmed that reduction of intrinsic TiN stress can prevent wiggling1 when the mask is not exposed to plasma during process flow. However, when TiN is exposed to plasma as in a typical back end of line (BEOL) process2-3, compressive stress increased in all films and resulted in wiggling even in the patterned PVD TiN sample with low intrinsic stress. This global increase in compressive stress due to plasma exposure did not correlate with intrinsic stress values, therefore, this work suggests a greater focus should be placed on plasma-induced stress to avoid line wiggling when selecting a TiN film. Further investigation found that increased surface roughness of the TiN mask can decrease the risk of wiggling, and that surface roughness is influenced by p-SiOCH etch selectivity, indicating mask surface roughness should also be considered when evaluating line wiggling in BEOL, p-SiOCH etching.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131688292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Efficient exposure of non-Manhattan layouts using Vistec’s shaped beam systems 使用Vistec的异形梁系统有效地暴露非曼哈顿布局

Advanced Lithography Pub Date : 2023-05-01 DOI: 10.1117/12.2656928

E. Linn, S. Fasold, R. Galler, S. Kuefner, I. Stolberg, M. Suelzle, U. Weidenmueller

{"title":"Efficient exposure of non-Manhattan layouts using Vistec’s shaped beam systems","authors":"E. Linn, S. Fasold, R. Galler, S. Kuefner, I. Stolberg, M. Suelzle, U. Weidenmueller","doi":"10.1117/12.2656928","DOIUrl":"https://doi.org/10.1117/12.2656928","url":null,"abstract":"In emerging optical applications, curvilinear features increase lithography complexity, which leads to long e-beam write times. Multi beam mask writers offer a solution for high-end masks where curvilinear features are predominant. For mid-range masks and emerging optical applications especially variable shaped beam systems still offer advantages. The challenge for optical applications is to expose large-scale non-Manhattan layouts such as slanted gratings, circle arrays, or curved geometrical structures with high fidelity in an efficient way. For arbitrary curved structures, including 3D, a novel shot count optimized and edge roughness aware approximation (JES-approximation) approach by ePLACE data preparation software package (Vistec Electron Beam GmbH, Germany) is applied. In contrast to common fracturing, both throughput and pattern fidelity in optical applications are highly increased. The optical quality by means of high sensitive haze measurements of diffractive axicons is proven. For repetitive structures such as slanted gratings or circle arrays the cell projection (CP) option is the solution of choice, but CP is also effective for arbitrarily curved gratings. Key enabler is the data preparation software ePLACE where cell dose values are calculated to meet the target layout contours precisely. Both JES-approximation as well as cell projection with target contour calculation are powerful tools for an efficient data preparation and final exposure of non-Manhattan layouts.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124459241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

E-beam direct write lithography: the versatile ally of optical lithography 电子束直写光刻:光学光刻的通用技术

Advanced Lithography Pub Date : 2023-05-01 DOI: 10.1117/12.2658273

F. Laulagnet, Jacques-Alexandre Dallery, L. Pain, M. May, Béatrice Hémard, Franck Garlet, I. Servin, C. Sabbione

{"title":"E-beam direct write lithography: the versatile ally of optical lithography","authors":"F. Laulagnet, Jacques-Alexandre Dallery, L. Pain, M. May, Béatrice Hémard, Franck Garlet, I. Servin, C. Sabbione","doi":"10.1117/12.2658273","DOIUrl":"https://doi.org/10.1117/12.2658273","url":null,"abstract":"Electron Beam Direct Write (EBDW or E-Beam) Lithography is a worldwide reference technology used in laboratories, universities and pilot line facilities for Research and Developments. Due to its low writing speed, E-Beam direct write has never been recognized as an acceptable industrial solution, exception made for optical mask manufacturing. Nevertheless, its natural high-resolution capability allows low-cost patterning of advanced or innovative devices ahead of their high-volume manufacturing ramp-up. Thanks to its full versatility with almost all type of chemically amplified resists, EBDW is a perfect complementary solution to optical lithography. This paper demonstrates the compatibility of EBDW lithography with advanced Negative Tone Development (NTD) resist and the possibility to set-up an hybrid E-Beam/193i lithography process flow with high performances in terms of resolution and mix & match overlay. This high-end lithography strategy alliance offers flexibility and cost advantages for device development R&D but also powerful possibilities for specific applications such circuit encryption as discussed at the end of this work-study.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124942307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design of experiment for optimal SiGe-Si selectivity 最佳SiGe-Si选择性实验设计

Advanced Lithography Pub Date : 2023-05-01 DOI: 10.1117/12.2656866

Zhengning Li, X. Ke, Jia Song, Fengmei Li, Shi-liang Ji, H. Zhang

引用次数: 0

Opportunities and challenges of heterogeneous integration: from IC packaging POV 异构集成的机遇与挑战:来自IC封装POV

Advanced Lithography Pub Date : 2023-05-01 DOI: 10.1117/12.2659852

Jeffery Chiang, Paul Wu

引用次数: 0

Pushing deep greyscale lithography beyond 100-µm pattern depth with a novel photoresist 用一种新型光刻胶推动深度灰度光刻超过100微米的图案深度

Advanced Lithography Pub Date : 2023-05-01 DOI: 10.1117/12.2661526

C. Schuster, G. Ekindorf, A. Voigt, A. Schleunitz, G. Gruetzner